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    METHODS OF FABRICATING CMOS IMAGE SENSORS
    2.
    发明申请
    METHODS OF FABRICATING CMOS IMAGE SENSORS 审中-公开
    制作CMOS图像传感器的方法

    公开(公告)号：US20080182354A1

    公开(公告)日：2008-07-31

    申请号：US11950249

    申请日：2007-12-04

    申请人： Jong-Jin Lee ,  Ju-Hyun Ko ,  Jong-Eun Park ,  Hyun-Suk Kim ,  Dong-Yoon Jang

    发明人： Jong-Jin Lee ,  Ju-Hyun Ko ,  Jong-Eun Park ,  Hyun-Suk Kim ,  Dong-Yoon Jang

    IPC分类号： H01L31/18

    CPC分类号： H01L27/14643 ,  H01L27/14603 ,  H01L27/1463 ,  H01L27/14681 ,  H01L27/14689

    摘要： CMOS image sensors and related methods of fabricating CMOS image sensors are disclosed. Fabrication of a CMOS image sensor can include forming a first impurity region having a first conductivity type in a semiconductor substrate. A second impurity region having a second conductivity type is formed in the semiconductor substrate adjacent to the first impurity region. A third impurity region having the first conductivity type is formed in the semiconductor substrate and located below the second impurity region. A transfer gate is formed on the semiconductor substrate and at least partially overlaps the first, second, and third impurity regions. A photo sensitive device is formed in the semiconductor substrate and adjacent to one side of the transfer gate. A floating diffusion region is formed in the semiconductor substrate and located adjacent to an opposite side of the transfer gate from the photosensitive device.

    摘要翻译： 公开了CMOS图像传感器和制造CMOS图像传感器的相关方法。 CMOS图像传感器的制造可以包括在半导体衬底中形成具有第一导电类型的第一杂质区域。 在与第一杂质区相邻的半导体衬底中形成具有第二导电类型的第二杂质区。 具有第一导电类型的第三杂质区形成在半导体衬底中并位于第二杂质区的下方。 传输栅极形成在半导体衬底上并且至少部分地与第一，第二和第三杂质区重叠。 光敏元件形成在半导体衬底中并与传输门的一侧相邻。 浮动扩散区域形成在半导体衬底中并且位于与传感栅极的与光敏器件相反的一侧。

    Image sensors
    3.
    发明授权
    Image sensors 有权
    图像传感器

    公开(公告)号：US08537255B2

    公开(公告)日：2013-09-17

    申请号：US12801740

    申请日：2010-06-23

    申请人： Kyung-Ho Lee ,  Jung-Chak Ahn ,  Dong-Yoon Jang ,  Wook Lee ,  Tae-Sub Jung

    发明人： Kyung-Ho Lee ,  Jung-Chak Ahn ,  Dong-Yoon Jang ,  Wook Lee ,  Tae-Sub Jung

    IPC分类号： H04N3/14 ,  H04N9/083 ,  H04N5/335 ,  H04N9/04

    CPC分类号： H04N9/045 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14687

    摘要： Image sensors including a semiconductor substrate, a plurality of photo detecting elements, a dielectric layer, a plurality of color filters, and a plurality of micro lenses. The photo detecting elements may be in the semiconductor substrate and may convert an incident light into an electric signal. The dielectric layer may be on the semiconductor substrate and may include a plurality of photo blocking regions on regions between the photo detecting elements. The color filters may be on the dielectric layer and may be disposed corresponding to the plurality of photo detecting elements, respectively. The micro lenses may be on the plurality of color filters and may be disposed corresponding to the plurality of photo detecting elements, respectively.

    摘要翻译： 图像传感器包括半导体衬底，多个光电检测元件，电介质层，多个滤色器和多个微透镜。 光检测元件可以在半导体衬底中，并且可以将入射光转换成电信号。 电介质层可以在半导体衬底上并且可以包括在光检测元件之间的区域上的多个光阻挡区域。 滤色器可以在电介质层上，并且可以分别对应于多个光检测元件设置。 微透镜可以在多个滤色器上，并且可以分别对应于多个光检测元件设置。

    Image sensors
    4.
    发明申请
    Image sensors 审中-公开
    图像传感器

    公开(公告)号：US20100134668A1

    公开(公告)日：2010-06-03

    申请号：US12591721

    申请日：2009-11-30

    申请人： Jong Eun Park ,  Yong Jei Lee ,  Jung Chak Ahn ,  Dong-Yoon Jang

    发明人： Jong Eun Park ,  Yong Jei Lee ,  Jung Chak Ahn ,  Dong-Yoon Jang

    IPC分类号： H04N5/335 ,  H01L31/0352

    CPC分类号： H01L27/1463 ,  H01L27/14629 ,  H01L27/1464

    摘要： An image sensor includes a plurality of wells for isolating a plurality of photodiodes from each other. Each of the wells includes a P-type well region and an N-type well region configured to receive a positive bias voltage. The image sensor provides a clearer image by suppressing a blooming effect and a dark current.

    摘要翻译： 图像传感器包括用于将多个光电二极管彼此隔离的多个阱。 每个阱包括配置成接收正偏置电压的P型阱区和N型阱区。 图像传感器通过抑制起霜效果和暗电流来提供更清晰的图像。

    Image sensor and image sensing system including the same
    5.
    发明申请
    Image sensor and image sensing system including the same 有权
    图像传感器和图像传感系统包括相同的

    公开(公告)号：US20100045836A1

    公开(公告)日：2010-02-25

    申请号：US12461608

    申请日：2009-08-18

    申请人： Yong Jei Lee ,  Jung Chak Ahn ,  Jong Eun Park ,  Dong-Yoon Jang

    发明人： Yong Jei Lee ,  Jung Chak Ahn ,  Jong Eun Park ,  Dong-Yoon Jang

    IPC分类号： H04N5/335 ,  H01L27/146

    CPC分类号： H01L27/14643 ,  H01L27/14603 ,  H01L27/14612 ,  H01L27/14641

    摘要： An image sensor includes a conductive well in a semiconductor substrate, a photo sensitive device (PSD) in the semiconductor substrate below the conductive well, the PSD and conductive well overlapping each other, and a charge transmission unit in the semiconductor substrate and adjacent to the conductive well, the charge transmission unit having a structure of a recessed gate and being positioned in a recess region of the semiconductor substrate.

    摘要翻译： 图像传感器包括在半导体衬底中的导电阱，在导电阱下方的半导体衬底中的光敏器件（PSD），PSD和导电阱彼此重叠的光敏器件（PSD）以及半导体衬底中的电荷传输单元 所述电荷传输单元具有凹入栅极的结构并且位于所述半导体衬底的凹部区域中。

    CMOS image sensor
    6.
    发明申请
    CMOS image sensor 审中-公开
    CMOS图像传感器

    公开(公告)号：US20060289911A1

    公开(公告)日：2006-12-28

    申请号：US11472389

    申请日：2006-06-22

    申请人： Sang-Jun Lee ,  Yang-Kyu Choi ,  Dong-Yoon Jang

    发明人： Sang-Jun Lee ,  Yang-Kyu Choi ,  Dong-Yoon Jang

    IPC分类号： H01L31/113

    CPC分类号： H01L27/14603 ,  H01L27/14609 ,  H01L27/1463 ,  H01L27/14643

    摘要： Disclosed is a CMOS image sensor, comprising a photodiode formed in a substrate, a floating diffusion region formed in the substrate in a manner such that it is distanced from the photodiode surrounds the photodiode and a transfer gate formed in a manner such that it is distanced from the photodiode and the floating diffusion region and formed in a boundary area between the photodiode and the floating diffusion region, thereby overlapping the photodiode and the floating diffusion region.

    摘要翻译： 公开了一种CMOS图像传感器，其包括形成在衬底中的光电二极管，以与光电二极管相隔的方式形成在衬底中的浮动扩散区域包围光电二极管，并且以使其远离的方式形成传输门 从光电二极管和浮动扩散区域形成在光电二极管和浮动扩散区域之间的边界区域中，从而与光电二极管和浮动扩散区域重叠。