公开(公告)号：US09028657B2

公开(公告)日：2015-05-12

申请号：US12879484

申请日：2010-09-10

Applicant: Jingbin Feng ,  R. Marshall Stowell ,  Shantinath Ghongadi ,  Zhian He ,  Frederick Dean Wilmot

Inventor： Jingbin Feng ,  R. Marshall Stowell ,  Shantinath Ghongadi ,  Zhian He ,  Frederick Dean Wilmot

IPC: C25B9/02 ,  C25D17/00 ,  C25D17/10 ,  C25D7/12 ,  C25D17/06

CPC classification number: C25D17/12 ,  C25D7/12 ,  C25D7/123 ,  C25D17/001 ,  C25D17/06 ,  C25D17/10 ,  C25D21/12 ,  H01L21/2885

Abstract: Apparatus and methods for electroplating are described. Apparatus described herein include anode supports including positioning mechanisms that maintain a consistent distance between the surface of the wafer and the surface of a consumable anode during plating. Greater uniformity control is achieved.

Abstract translation: 描述了用于电镀的设备和方法。 本文描述的装置包括阳极支撑件，其包括定位机构，其在电镀期间保持晶片表面和可消耗阳极表面之间的一致的距离。 实现更均匀性的控制。

公开(公告)号：US07727863B1

公开(公告)日：2010-06-01

申请号：US12286243

申请日：2008-09-29

Applicant: Bryan L. Buckalew ,  Jonathan D. Reid ,  Johanes H. Sukamto ,  Frederick Dean Wilmot ,  Richard S. Hill

Inventor： Bryan L. Buckalew ,  Jonathan D. Reid ,  Johanes H. Sukamto ,  Frederick Dean Wilmot ,  Richard S. Hill

IPC: H01L21/322

CPC classification number: C25D7/123 ,  C23C18/1666 ,  C25D5/20 ,  C25D21/04 ,  H01L21/288 ,  H01L21/2885

Abstract: Sonic radiation is applied to a wafer portion of the planar surface of a rotating, tilted wafer as it is being immersed into a liquid treatment bath. The portion includes the leading outer edge region of the wafer. The area of the wafer portion is significantly less than the total surface area of the planar wafer surface. Power density is minimized. As a result, bubbles are removed from the wafer surface and cavitation in the liquid bath is avoided. In some embodiments, the liquid bath is de-gassed to inhibit bubble formation.

Abstract translation: 当旋转倾斜的晶片被浸入液体处理槽中时，将声波辐射施加到旋转的倾斜晶片的平面表面的晶片部分。 该部分包括晶片的引导外缘区域。 晶片部分的面积显着小于平面晶片表面的总表面积。 功率密度最小化。 结果，从晶片表面去除了气泡，并避免了液槽中的气蚀。 在一些实施方案中，液体浴被去气以抑制气泡形成。

公开(公告)号：US20120061246A1

公开(公告)日：2012-03-15

申请号：US12879484

申请日：2010-09-10

Applicant: Jingbin Feng ,  R. Marshall Stowell ,  Shantinath Ghongadi ,  Zhian He ,  Frederick Dean Wilmot

Inventor： Jingbin Feng ,  R. Marshall Stowell ,  Shantinath Ghongadi ,  Zhian He ,  Frederick Dean Wilmot

IPC: C25D7/12 ,  C25D17/06 ,  C25D17/10 ,  C25D17/00

CPC classification number: C25D17/12 ,  C25D7/12 ,  C25D7/123 ,  C25D17/001 ,  C25D17/06 ,  C25D17/10 ,  C25D21/12 ,  H01L21/2885

Abstract: Apparatus and methods for electroplating are described. Apparatus described herein include anode supports including positioning mechanisms that maintain a consistent distance between the surface of the wafer and the surface of a consumable anode during plating. Greater uniformity control is achieved.

Abstract translation: 描述了用于电镀的设备和方法。 本文描述的装置包括阳极支撑件，其包括定位机构，其在电镀期间保持晶片表面和可消耗阳极表面之间的一致的距离。 实现更均匀性的控制。

公开(公告)号：US20120292192A1

公开(公告)日：2012-11-22

申请号：US13460423

申请日：2012-04-30

Applicant: Manish RANJAN ,  Shantinath GHONGADI ,  Frederick Dean WILMOT ,  Douglas HILL ,  Bryan L. BUCKALEW

Inventor： Manish RANJAN ,  Shantinath GHONGADI ,  Frederick Dean WILMOT ,  Douglas HILL ,  Bryan L. BUCKALEW

IPC: C25D5/00 ,  C25D17/00

CPC classification number: C25D21/12 ,  C25D5/00 ,  C25D7/12 ,  C25D7/123 ,  C25D17/001 ,  C25D17/06 ,  G03F7/16 ,  G03F7/20 ,  H01L21/0206 ,  H01L21/0273 ,  H01L21/2885 ,  H01L21/76802 ,  H01L21/76873 ,  H01L21/76879 ,  H01L23/5226 ,  H01L23/53228

Abstract: Methods described herein manage wafer entry into an electrolyte so that air entrapment due to initial impact of the wafer and/or wafer holder with the electrolyte is reduced and the wafer is moved in such a way that an electrolyte wetting wave front is maintained throughout immersion of the wafer also minimizing air entrapment.

Abstract translation: 本文描述的方法将晶片进入电解质，使得由于晶片和/或晶片保持器与电解质的初始冲击而引起的空气滞留减少，并且晶片以这样的方式移动，使得在浸渍期间保持电解质润湿波前 该晶片还使空气截留最小化。

公开(公告)号：US09028666B2

公开(公告)日：2015-05-12

申请号：US13460423

申请日：2012-04-30

Applicant: Manish Ranjan ,  Shantinath Ghongadi ,  Frederick Dean Wilmot ,  Douglas Hill ,  Bryan L. Buckalew

Inventor： Manish Ranjan ,  Shantinath Ghongadi ,  Frederick Dean Wilmot ,  Douglas Hill ,  Bryan L. Buckalew

IPC: C25D5/00 ,  C25D17/00 ,  C25D7/12 ,  H01L21/288

CPC classification number: C25D21/12 ,  C25D5/00 ,  C25D7/12 ,  C25D7/123 ,  C25D17/001 ,  C25D17/06 ,  G03F7/16 ,  G03F7/20 ,  H01L21/0206 ,  H01L21/0273 ,  H01L21/2885 ,  H01L21/76802 ,  H01L21/76873 ,  H01L21/76879 ,  H01L23/5226 ,  H01L23/53228

Abstract: Methods described herein manage wafer entry into an electrolyte so that air entrapment due to initial impact of the wafer and/or wafer holder with the electrolyte is reduced and the wafer is moved in such a way that an electrolyte wetting wave front is maintained throughout immersion of the wafer also minimizing air entrapment.

Abstract translation: 本文描述的方法将晶片进入电解质，使得由于晶片和/或晶片保持器与电解质的初始冲击而引起的空气滞留减少，并且晶片以这样的方式移动，使得在浸渍期间保持电解质润湿波前 该晶片还使空气截留最小化。