Electrostatic-discharge protecting circuit and method
    1.
    发明授权
    Electrostatic-discharge protecting circuit and method 失效
    静电放电保护电路及方法

    公开(公告)号:US5818087A

    公开(公告)日:1998-10-06

    申请号:US747659

    申请日:1996-11-13

    申请人: Hyeok Jae Yee

    发明人: Hyeok Jae Yee

    摘要: An electrostatic-discharge (ESD) protecting circuit of a semiconductor device prevents damage from an ESD applied to an internal circuit through an input or output pad. The thickness of respective gate insulating layers of respective active devices of the electrostatic-discharge protecting circuit and internal circuit, which are formed within a given radius in the range of about 350.mu.m to about 1000.mu.m from the electrostatic-discharge protecting circuit, is thicker than the thickness of gate insulating layers of active devices formed outside the radius.

    摘要翻译: 半导体器件的静电放电(ESD)保护电路可防止通过输入或输出焊盘施加到内部电路的ESD的损坏。 在距离静电放电保护电路约350μm至约1000μm范围内的给定半径内形成的静电放电保护电路和内部电路的各有源器件的各栅极绝缘层的厚度, 比形成在半径外的有源器件的栅极绝缘层的厚度厚。

    Method of forming an electrostatic-discharge protecting circuit
    2.
    发明授权
    Method of forming an electrostatic-discharge protecting circuit 失效
    形成静电放电保护电路的方法

    公开(公告)号:US5893733A

    公开(公告)日:1999-04-13

    申请号:US49122

    申请日:1998-03-27

    申请人: Hyeok Jae Yee

    发明人: Hyeok Jae Yee

    摘要: An electrostatic-discharge (ESD) protecting circuit of a semiconductor device prevents damage from an ESD applied to an internal circuit through an input or output pad. The thickness of respective gate insulating layers of respective active devices of the electrostatic-discharge protecting circuit and internal circuit, which are formed within a given radius in the range of about 350 .mu.m to about 1000 .mu.m from the electrostatic-discharge protecting circuit, is thicker than the thickness of gate insulating layers of active devices formed outside the radius.

    摘要翻译: 半导体器件的静电放电(ESD)保护电路可防止通过输入或输出焊盘施加到内部电路的ESD的损坏。 在距离静电放电保护电路约350μm至约1000μm范围内的给定半径内形成的静电放电保护电路和内部电路的各有源器件的各栅极绝缘层的厚度, 比形成在半径外的有源器件的栅极绝缘层的厚度厚。