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公开(公告)号：US08859319B2
公开(公告)日：2014-10-14
申请号：US13612736
申请日：2012-09-12
Applicant: Sang Hoon Kim , Gyungock Kim , In Gyoo Kim , JiHo Joo , Ki Seok Jang
Inventor： Sang Hoon Kim , Gyungock Kim , In Gyoo Kim , JiHo Joo , Ki Seok Jang
IPC: H01L31/18
CPC classification number: H01L31/1804 , G02B6/12004 , G02B6/131 , H01L31/02327 , H01L31/103 , H01L31/1037 , H01L31/109 , Y02E10/547 , Y02P70/521
Abstract: Methods of forming photo detectors are provided. The method includes providing a semiconductor layer on a substrate, forming a trench in the semiconductor layer, forming a first single crystalline layer and a second single crystalline layer using a selective single crystalline growth process in the trench, and patterning the first and second single crystalline layers and the semiconductor layer to form a first single crystalline pattern, a second single crystalline pattern and an optical waveguide.
Abstract translation: 提供了形成光电检测器的方法。 该方法包括在衬底上提供半导体层，在半导体层中形成沟槽，在沟槽中使用选择性单晶生长工艺形成第一单晶层和第二单晶层，以及使第一和第二单晶 层和半导体层以形成第一单晶图案，第二单晶图案和光波导。
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公开(公告)号：US20120126357A1
公开(公告)日：2012-05-24
申请号：US13284818
申请日：2011-10-28
Applicant: Sang Hoon KIM , Gyungock Kim , In Gyoo Kim , JiHo Joo , Ki Seok Jang
Inventor： Sang Hoon KIM , Gyungock Kim , In Gyoo Kim , JiHo Joo , Ki Seok Jang
IPC: H01L31/102 , H01L31/18
CPC classification number: H01L31/102 , H01L31/18
Abstract: Provided are light detection devices and methods of manufacturing the same. The light detection device includes a first conductive pattern on a surface of a substrate, an insulating pattern on the substrate and having an opening exposing at least a portion of the first conductive pattern, a light absorbing layer filling the opening of the insulating pattern and having a top surface disposed at a level substantially higher than a top surface of the insulating pattern, a second conductive pattern on the light absorbing layer, and connecting terminals electrically connected to the first and second conductive patterns, respectively.
Abstract translation: 提供了光检测装置及其制造方法。 光检测装置包括在基板的表面上的第一导电图案，在基板上的绝缘图案，并且具有露出第一导电图案的至少一部分的开口，填充绝缘图案的开口的光吸收层，并且具有 设置在基本上高于绝缘图案的顶表面的高度的顶表面，在光吸收层上的第二导电图案，以及分别电连接到第一和第二导电图案的连接端子。
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公开(公告)号：US08928107B2
公开(公告)日：2015-01-06
申请号：US13284818
申请日：2011-10-28
Applicant: Sang Hoon Kim , Gyungock Kim , In Gyoo Kim , JiHo Joo , Ki Seok Jang
Inventor： Sang Hoon Kim , Gyungock Kim , In Gyoo Kim , JiHo Joo , Ki Seok Jang
IPC: H01L31/06 , H01L31/102 , H01L31/18
CPC classification number: H01L31/102 , H01L31/18
Abstract: Provided are light detection devices and methods of manufacturing the same. The light detection device includes a first conductive pattern on a surface of a substrate, an insulating pattern on the substrate and having an opening exposing at least a portion of the first conductive pattern, a light absorbing layer filling the opening of the insulating pattern and having a top surface disposed at a level substantially higher than a top surface of the insulating pattern, a second conductive pattern on the light absorbing layer, and connecting terminals electrically connected to the first and second conductive patterns, respectively.
Abstract translation: 提供了光检测装置及其制造方法。 光检测装置包括在基板的表面上的第一导电图案，在基板上的绝缘图案，并且具有露出第一导电图案的至少一部分的开口，填充绝缘图案的开口的光吸收层，并且具有 设置在基本上高于绝缘图案的顶表面的高度的顶表面，在光吸收层上的第二导电图案，以及分别电连接到第一和第二导电图案的连接端子。
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公开(公告)号：US08823121B2
公开(公告)日：2014-09-02
申请号：US13550364
申请日：2012-07-16
Applicant: Dongwoo Suh , Sanghoon Kim , Jiho Joo , Gyungock Kim
Inventor： Dongwoo Suh , Sanghoon Kim , Jiho Joo , Gyungock Kim
IPC: H01L31/00 , G02B6/12 , H01L31/0352 , G02B6/13 , G02B6/136
CPC classification number: G02B6/12004 , G02B6/131 , G02B6/136 , G02B2006/121 , H01L31/0352
Abstract: Provided is a waveguide photodetector that may improve an operation speed and increase or maximize productivity. The waveguide photodetector includes a waveguide layer extending in a first direction, an absorption layer disposed on the waveguide layer, a first electrode disposed on the absorption layer, a second electrode disposed on the waveguide layer, the second electrode being spaced from the first electrode and the absorption layer in a second direction crossing the first direction, and at least one bridge electrically connecting the absorption layer to the second electrode.
Abstract translation: 提供了可以提高操作速度并增加或最大化生产率的波导光电检测器。 波导光电检测器包括沿第一方向延伸的波导层，设置在波导层上的吸收层，设置在吸收层上的第一电极，设置在波导层上的第二电极，第二电极与第一电极间隔开， 所述吸收层在与所述第一方向交叉的第二方向上，以及至少一个电桥将所述吸收层电连接到所述第二电极。
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公开(公告)号：US08698271B2
公开(公告)日：2014-04-15
申请号：US12404275
申请日：2009-03-13
Applicant: Dongwoo Suh , Sang Hoon Kim , Gyungock Kim , JiHo Joo
Inventor： Dongwoo Suh , Sang Hoon Kim , Gyungock Kim , JiHo Joo
CPC classification number: H01L31/028 , H01L21/02381 , H01L21/0245 , H01L21/02532 , H01L21/02592 , H01L21/0262 , H01L21/02667 , H01L31/103 , H01L31/1808 , H01L31/1872 , Y02E10/50 , Y02P70/521
Abstract: Provided is a germanium photodetector having a germanium epitaxial layer formed without using a buffer layer and a method of fabricating the same. In the method, an amorphous germanium layer is formed on a substrate. The amorphous germanium layer is heated up to a high temperature to form a crystallized germanium layer. A germanium epitaxial layer is formed on the crystallized germanium layer.
Abstract translation: 提供了具有不使用缓冲层形成的锗外延层的锗光电检测器及其制造方法。 在该方法中，在基板上形成无定形锗层。 将非晶锗层加热至高温以形成结晶的锗层。 在结晶的锗层上形成锗外延层。
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Patent Agency Ranking
公开(公告)号：US20120280347A1
公开(公告)日：2012-11-08
申请号：US13550364
申请日：2012-07-16
Applicant: Dongwoo SUH , Sanghoon KIM , Jiho JOO , Gyungock KIM
Inventor： Dongwoo SUH , Sanghoon KIM , Jiho JOO , Gyungock KIM
IPC: H01L31/0232
CPC classification number: G02B6/12004 , G02B6/131 , G02B6/136 , G02B2006/121 , H01L31/0352
Abstract: Provided is a waveguide photodetector that may improve an operation speed and increase or maximize productivity. The waveguide photodetector includes a waveguide layer extending in a first direction, an absorption layer disposed on the waveguide layer, a first electrode disposed on the absorption layer, a second electrode disposed on the waveguide layer, the second electrode being spaced from the first electrode and the absorption layer in a second direction crossing the first direction, and at least one bridge electrically connecting the absorption layer to the second electrode.
Abstract translation: 提供了可以提高操作速度并增加或最大化生产率的波导光电检测器。 波导光电检测器包括沿第一方向延伸的波导层，设置在波导层上的吸收层，设置在吸收层上的第一电极，设置在波导层上的第二电极，第二电极与第一电极间隔开， 所述吸收层在与所述第一方向交叉的第二方向上，以及至少一个电桥将所述吸收层电连接到所述第二电极。
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公开(公告)号：US08242571B2
公开(公告)日：2012-08-14
申请号：US12763990
申请日：2010-04-20
Applicant: Dongwoo Suh , Sanghoon Kim , Jiho Joo , Gyungock Kim
Inventor： Dongwoo Suh , Sanghoon Kim , Jiho Joo , Gyungock Kim
IPC: H01L31/0232 , G02B6/42
CPC classification number: G02B6/12004 , G02B6/131 , G02B6/136 , G02B2006/121 , H01L31/0352
Abstract: Provided is a waveguide photodetector that may improve an operation speed and increase or maximize productivity. The waveguide photodetector includes a waveguide layer extending in a first direction, an absorption layer disposed on the waveguide layer, a first electrode disposed on the absorption layer, a second electrode disposed on the waveguide layer, the second electrode being spaced from the first electrode and the absorption layer in a second direction crossing the first direction, and at least one bridge electrically connecting the absorption layer to the second electrode.
Abstract translation: 提供了可以提高操作速度并增加或最大化生产率的波导光电检测器。 波导光电检测器包括沿第一方向延伸的波导层，设置在波导层上的吸收层，设置在吸收层上的第一电极，设置在波导层上的第二电极，第二电极与第一电极间隔开， 所述吸收层在与所述第一方向交叉的第二方向上，以及至少一个电桥将所述吸收层电连接到所述第二电极。
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公开(公告)号：US20110058764A1
公开(公告)日：2011-03-10
申请号：US12872881
申请日：2010-08-31
Applicant: Gyungock KIM , Jeong Woo Park , Jongbum You , Sang Gi Kim , Sanghoon Kim , In Gyoo Kim , Jiho Joo , Duk Jun Kim , Dongwoo Suh , Sahnggi Park , Ki Seok Jang , Junghyung Pyo , Kap-Joong Kim , Do Won Kim , Dae Seo Park
Inventor： Gyungock KIM , Jeong Woo Park , Jongbum You , Sang Gi Kim , Sanghoon Kim , In Gyoo Kim , Jiho Joo , Duk Jun Kim , Dongwoo Suh , Sahnggi Park , Ki Seok Jang , Junghyung Pyo , Kap-Joong Kim , Do Won Kim , Dae Seo Park
IPC: G02F1/035
CPC classification number: G02F1/025 , G02F2201/063
Abstract: Provided is an electro-optic modulating device. The electro-optic modulating device includes an optical waveguide with a vertical structure and sidewalls of the vertical structure are used to configure a junction.
Abstract translation: 提供了一种电光调制装置。 电光调制装置包括具有垂直结构的光波导，垂直结构的侧壁用于构造接合部。
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公开(公告)号：US20100102412A1
公开(公告)日：2010-04-29
申请号：US12404275
申请日：2009-03-13
Applicant: Dongwoo SUH , Sam Hoon KIM , Gyungock KIM , JiHo JOO
Inventor： Dongwoo SUH , Sam Hoon KIM , Gyungock KIM , JiHo JOO
CPC classification number: H01L31/028 , H01L21/02381 , H01L21/0245 , H01L21/02532 , H01L21/02592 , H01L21/0262 , H01L21/02667 , H01L31/103 , H01L31/1808 , H01L31/1872 , Y02E10/50 , Y02P70/521
Abstract: Provided is a germanium photodetector having a germanium epitaxial layer formed without using a buffer layer and a method of fabricating the same. In the method, an amorphous germanium layer is formed on a substrate. The amorphous germanium layer is heated up to a high temperature to form a crystallized germanium layer. A germanium epitaxial layer is formed on the crystallized germanium layer.
Abstract translation: 提供了具有不使用缓冲层形成的锗外延层的锗光电检测器及其制造方法。 在该方法中，在基板上形成无定形锗层。 将非晶锗层加热至高温以形成结晶的锗层。 在结晶的锗层上形成锗外延层。
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公开(公告)号：US08548281B2
公开(公告)日：2013-10-01
申请号：US12872881
申请日：2010-08-31
Applicant: Gyungock Kim , Jeong Woo Park , Jongbum You , Sang Gi Kim , Sanghoon Kim , In Gyoo Kim , Jiho Joo , Duk Jun Kim , Dongwoo Suh , Sahnggi Park , Ki Seok Jang , Junghyung Pyo , Kap-Joong Kim , Do Won Kim , Dae Seo Park
Inventor： Gyungock Kim , Jeong Woo Park , Jongbum You , Sang Gi Kim , Sanghoon Kim , In Gyoo Kim , Jiho Joo , Duk Jun Kim , Dongwoo Suh , Sahnggi Park , Ki Seok Jang , Junghyung Pyo , Kap-Joong Kim , Do Won Kim , Dae Seo Park
IPC: G02F1/025
CPC classification number: G02F1/025 , G02F2201/063
Abstract: Provided is an electro-optic modulating device. The electro-optic modulating device includes an optical waveguide with a vertical structure and sidewalls of the vertical structure are used to configure a junction.
Abstract translation: 提供了一种电光调制装置。 电光调制装置包括具有垂直结构的光波导，垂直结构的侧壁用于构造接合部。
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