公开(公告)号：US08698271B2

公开(公告)日：2014-04-15

申请号：US12404275

申请日：2009-03-13

Applicant: Dongwoo Suh ,  Sang Hoon Kim ,  Gyungock Kim ,  JiHo Joo

Inventor： Dongwoo Suh ,  Sang Hoon Kim ,  Gyungock Kim ,  JiHo Joo

IPC: H01L33/00 ,  H01L21/20

CPC classification number: H01L31/028 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/0262 ,  H01L21/02667 ,  H01L31/103 ,  H01L31/1808 ,  H01L31/1872 ,  Y02E10/50 ,  Y02P70/521

Abstract: Provided is a germanium photodetector having a germanium epitaxial layer formed without using a buffer layer and a method of fabricating the same. In the method, an amorphous germanium layer is formed on a substrate. The amorphous germanium layer is heated up to a high temperature to form a crystallized germanium layer. A germanium epitaxial layer is formed on the crystallized germanium layer.

Abstract translation: 提供了具有不使用缓冲层形成的锗外延层的锗光电检测器及其制造方法。 在该方法中，在基板上形成无定形锗层。 将非晶锗层加热至高温以形成结晶的锗层。 在结晶的锗层上形成锗外延层。

公开(公告)号：US08859319B2

公开(公告)日：2014-10-14

申请号：US13612736

申请日：2012-09-12

Applicant: Sang Hoon Kim ,  Gyungock Kim ,  In Gyoo Kim ,  JiHo Joo ,  Ki Seok Jang

Inventor： Sang Hoon Kim ,  Gyungock Kim ,  In Gyoo Kim ,  JiHo Joo ,  Ki Seok Jang

IPC: H01L31/18

CPC classification number: H01L31/1804 ,  G02B6/12004 ,  G02B6/131 ,  H01L31/02327 ,  H01L31/103 ,  H01L31/1037 ,  H01L31/109 ,  Y02E10/547 ,  Y02P70/521

Abstract: Methods of forming photo detectors are provided. The method includes providing a semiconductor layer on a substrate, forming a trench in the semiconductor layer, forming a first single crystalline layer and a second single crystalline layer using a selective single crystalline growth process in the trench, and patterning the first and second single crystalline layers and the semiconductor layer to form a first single crystalline pattern, a second single crystalline pattern and an optical waveguide.

Abstract translation: 提供了形成光电检测器的方法。 该方法包括在衬底上提供半导体层，在半导体层中形成沟槽，在沟槽中使用选择性单晶生长工艺形成第一单晶层和第二单晶层，以及使第一和第二单晶 层和半导体层以形成第一单晶图案，第二单晶图案和光波导。

公开(公告)号：US08928107B2

公开(公告)日：2015-01-06

申请号：US13284818

申请日：2011-10-28

Applicant: Sang Hoon Kim ,  Gyungock Kim ,  In Gyoo Kim ,  JiHo Joo ,  Ki Seok Jang

Inventor： Sang Hoon Kim ,  Gyungock Kim ,  In Gyoo Kim ,  JiHo Joo ,  Ki Seok Jang

IPC: H01L31/06 ,  H01L31/102 ,  H01L31/18

CPC classification number: H01L31/102 ,  H01L31/18

Abstract: Provided are light detection devices and methods of manufacturing the same. The light detection device includes a first conductive pattern on a surface of a substrate, an insulating pattern on the substrate and having an opening exposing at least a portion of the first conductive pattern, a light absorbing layer filling the opening of the insulating pattern and having a top surface disposed at a level substantially higher than a top surface of the insulating pattern, a second conductive pattern on the light absorbing layer, and connecting terminals electrically connected to the first and second conductive patterns, respectively.

Abstract translation: 提供了光检测装置及其制造方法。 光检测装置包括在基板的表面上的第一导电图案，在基板上的绝缘图案，并且具有露出第一导电图案的至少一部分的开口，填充绝缘图案的开口的光吸收层，并且具有 设置在基本上高于绝缘图案的顶表面的高度的顶表面，在光吸收层上的第二导电图案，以及分别电连接到第一和第二导电图案的连接端子。

公开(公告)号：US08948224B2

公开(公告)日：2015-02-03

申请号：US13545889

申请日：2012-07-10

Applicant: In Gyoo Kim ,  Gyungock Kim ,  Sang Hoon Kim ,  JiHo Joo ,  Ki Seok Jang

Inventor： In Gyoo Kim ,  Gyungock Kim ,  Sang Hoon Kim ,  JiHo Joo ,  Ki Seok Jang

IPC: H01L21/00

CPC classification number: H01S5/021 ,  H01S3/0637 ,  H01S5/0205 ,  H01S5/026 ,  H01S5/028 ,  H01S5/1032 ,  H01S5/125 ,  H01S5/2272 ,  H01S5/3027

Abstract: The inventive concept provides semiconductor laser devices and methods of fabricating the same. According to the method, a silicon-crystalline germanium layer for emitting a laser may be formed in a selected region by a selective epitaxial growth (SEG) method. Thus, surface roughness of both ends of a Fabry Perot cavity formed of the silicon-crystalline germanium layer may be reduced or minimized, and a cutting process and a polishing process may be omitted in the method of fabricating the semiconductor laser device.

Abstract translation: 本发明构思提供了半导体激光器件及其制造方法。 根据该方法，可以通过选择性外延生长（SEG）法在选择的区域中形成用于发射激光的硅晶锗层。 因此，可以减少或最小化由硅晶锗层形成的法布里珀罗腔的两端的表面粗糙度，并且在制造半导体激光器件的方法中可以省略切割工艺和抛光工艺。

公开(公告)号：US08761553B2

公开(公告)日：2014-06-24

申请号：US13302371

申请日：2011-11-22

Applicant: Sahnggi Park ,  Gyungock Kim ,  In Gyoo Kim ,  Jeong Woo Park ,  Sang Hoon Kim ,  Do Won Kim

Inventor： Sahnggi Park ,  Gyungock Kim ,  In Gyoo Kim ,  Jeong Woo Park ,  Sang Hoon Kim ,  Do Won Kim

IPC: G02B6/26 ,  G02B6/12

CPC classification number: H04J14/028 ,  G02B6/12007 ,  H01S5/026 ,  H01S5/1032 ,  H01S5/4087 ,  H04J14/02 ,  H04J14/0201

Abstract: Provided is an optical network structure. To configure an optical network structure between hundreds or more of cores in a CPU, intersection between waveguides does not occur, and thus, the optical network structure enables two-way communication between all the cores without an optical switch disposed in an intersection point. The present invention enables a single chip optical network using a silicon photonics optical element, and a CPU chip configured with hundreds or thousands of cores can be developed.

Abstract translation: 提供了一种光网络结构。 为了在CPU中配置数百个或更多个核心之间的光网络结构，不会发生波导之间的交叉，因此，光网络结构在所有核心之间实现双向通信，而光交换机不设置在交叉点。 本发明使得能够使用硅光子学光学元件的单芯片光网络，并且可以开发配置有数百或数千个核的CPU芯片。

公开(公告)号：US08369676B2

公开(公告)日：2013-02-05

申请号：US12385007

申请日：2009-03-27

Applicant: Joon Sung Kim ,  Han Seo Cho ,  Jae Hyun Jung ,  Sang Hoon Kim

Inventor： Joon Sung Kim ,  Han Seo Cho ,  Jae Hyun Jung ,  Sang Hoon Kim

IPC: G02B6/10 ,  G02B6/12

CPC classification number: H05K3/00 ,  G02B6/138 ,  G02B2006/12073 ,  H05K1/0274 ,  H05K3/28 ,  H05K2201/0187 ,  Y10T29/49165

Abstract: Disclosed herein is a printed circuit board for an optical waveguide, including: a substrate; an insulation layer having a through hole and formed on the substrate; a lower clad layer formed on a bottom of the through hole; core part formed on the lower clad layer; and an upper clad layer formed on the lower clad layer and the core part and thus covering an exposed surface of the core part.

Abstract translation: 本文公开了一种用于光波导的印刷电路板，包括：基板; 具有通孔并形成在所述基板上的绝缘层; 形成在所述通孔的底部的下包层; 芯部分形成在下包层上; 以及形成在下包层和芯部上并因此覆盖芯部的露出表面的上覆层。

公开(公告)号：US20100316329A1

公开(公告)日：2010-12-16

申请号：US12552918

申请日：2009-09-02

Applicant: Han Seo CHO ,  Sang Hoon Kim ,  Joon Sung Kim ,  Jae Hyun Jung

Inventor： Han Seo CHO ,  Sang Hoon Kim ,  Joon Sung Kim ,  Jae Hyun Jung

IPC: G02B6/12

CPC classification number: G02B6/4214 ,  G02B6/43

Abstract: Disclosed herein is an optical element package substrate configured such that electric wiring substrates having a cavity are layered on both sides of an optical waveguide, an optical element package is mounted in the electric wiring substrates, and an optical element mounted on the surface of the optical element package is housed in the cavity, so that the distance between the optical element and the optical waveguide is decreased, thereby increasing optical connection efficiency.

Abstract translation: 这里公开了一种光学元件封装基板，其被构造成使得具有空腔的电布线基板层叠在光波导的两侧，光学元件封装安装在电布线基板中，并且安装在光学器件的表面上的光学元件 元件封装容纳在空腔中，使得光学元件和光波导之间的距离减小，从而提高光学连接效率。

公开(公告)号：US20090290832A1

公开(公告)日：2009-11-26

申请号：US12216995

申请日：2008-07-14

Applicant: Sang Hoon Kim ,  Je Gwang Yoo ,  Joon Sung Kim ,  Jae Hyun Jung ,  Han Seo Cho

Inventor： Sang Hoon Kim ,  Je Gwang Yoo ,  Joon Sung Kim ,  Jae Hyun Jung ,  Han Seo Cho

IPC: G02B6/12

CPC classification number: G02B6/43 ,  G02B6/132 ,  G02B6/4214 ,  H05K1/0274 ,  H05K3/4602

Abstract: Disclosed herein is a printed circuit board including an optical waveguide and a method of manufacturing the board. In the board, the optical waveguide includes a metal layer extending portion integrally connected to a metal layer constituting a mirror formed in the optical waveguide. Since the method of the present invention creates the mirror using electroless plating, which is typically used in a process of manufacturing general printed circuit boards, it is suitable for the manufacture of printed circuit boards having a large area, and the mirror has high reflectivity and is efficient in terms of material consumption.

Abstract translation: 这里公开了包括光波导的印刷电路板和制造该板的方法。 在该板中，光波导包括与构成在光波导中形成的反射镜的金属层一体连接的金属层延伸部。 由于本发明的方法使用通常用于制造一般印刷电路板的工艺中的化学镀的镜子，所以适用于制造面积大的印刷电路板，并且镜具有高反射率和 在材料消耗方面效率高。

公开(公告)号：US20090232467A1

公开(公告)日：2009-09-17

申请号：US12155755

申请日：2008-06-09

Applicant: Joon Sung Kim ,  Sang Hoon Kim ,  Jae Hyun Jung ,  Han Seo Cho

Inventor： Joon Sung Kim ,  Sang Hoon Kim ,  Jae Hyun Jung ,  Han Seo Cho

IPC: G02B6/10 ,  H01B13/00

CPC classification number: G02B6/1221 ,  G02B2006/1219 ,  H05K1/0274

Abstract: Disclosed herein is a printed circuit board for an optical waveguide, including a base board, and an optical waveguide formed on the base board. The optical waveguide includes a lower clad layer formed on the base board, an insulation layer formed on the lower clad layer and having a core-forming through-hole, a core part formed on a region of the lower clad layer, which is exposed through the through-hole, and an upper clad layer formed in the through-hole and on the insulation layer.

Abstract translation: 这里公开了一种用于光波导的印刷电路板，包括基板和形成在基板上的光波导。 光波导包括形成在基板上的下包层，形成在下包层上并具有芯形成通孔的绝缘层，形成在下包层的区域上的芯部，其暴露于 所述通孔和形成在所述通孔中和所述绝缘层上的上覆层。

公开(公告)号：US06791105B2

公开(公告)日：2004-09-14

申请号：US10329269

申请日：2002-12-24

Applicant: Kyu Hwan Shim ,  Young Joo Song ,  Sang Hoon Kim ,  Jin Yeong Kang

Inventor： Kyu Hwan Shim ,  Young Joo Song ,  Sang Hoon Kim ,  Jin Yeong Kang

IPC: H01L2906

CPC classification number: H01L29/127 ,  B82Y10/00 ,  B82Y20/00 ,  H01L31/102 ,  H01L33/08 ,  H01L33/18

Abstract: An optoelectronic device and a method of manufacturing the same which the optoelectronic effect such as light emission or light reception can be increased by forming a dual-structural nano dot to enhance the confinement density of electrons and holes are provided. The optoelectronic device comprises an electron injection layer, a nano dot, and a hole injection layer. The nano dot has a dual structure composed of an external nano dot and an internal dot. The method of manufacturing the optoelectronic device comprises the steps of forming an electron injection layer on a semiconductor substrate; growing nano dot layer on the electron injection layer by an epi-growth method; heating the nano dot layer so that the nano dot has a dual structure composed of an external nano dot and an internal nano dot; and forming a hole injection layer on the overall structure.

Abstract translation: 提供了通过形成双结构纳米点以增强电子和空穴的限制密度来提高光发射或光接收等光电效应的光电子器件及其制造方法。 光电子器件包括电子注入层，纳米点和空穴注入层。 纳米点具有由外部纳米点和内部点组成的双重结构。 制造光电器件的方法包括以下步骤：在半导体衬底上形成电子注入层; 通过外延生长法在电子注入层上生长纳米点层; 加热纳米点层，使得纳米点具有由外部纳米点和内部纳米点组成的双重结构; 并在整个结构上形成空穴注入层。