公开(公告)号：US20100120364A1

公开(公告)日：2010-05-13

申请号：US12506387

申请日：2009-07-21

Applicant: Yong-Ho LEE ,  Sang-In LEE ,  Eun-Chul KIM ,  Kyoung-Han LEE

Inventor： Yong-Ho LEE ,  Sang-In LEE ,  Eun-Chul KIM ,  Kyoung-Han LEE

IPC: H04B7/00

CPC classification number: H04W8/005 ,  H04W84/18

Abstract: An apparatus and method for obtaining information on Bluetooth devices in a computing device using Bluetooth are provided. The method includes, if an Inquiry Response (IR) packet is received as a response to an inquiry packet, obtaining information on a first Bluetooth device transmitting the IR packet and determining whether a supplementary response indication field is enabled and, if the supplementary response indication field is enabled, receiving an Extended Inquiry Response (EIR) packet, and obtaining information on at least one Bluetooth device other than the first Bluetooth device through the EIR packet.

Abstract translation: 提供了一种使用蓝牙在计算设备中获取关于蓝牙设备的信息的设备和方法。 该方法包括如果接收到询问响应（IR）分组作为对查询分组的响应，则获取关于发送IR分组的第一蓝牙设备的信息，并确定辅助应答指示字段是否被启用，以及如果辅助响应指示 字段被启用，接收扩展查询响应（EIR）分组，以及通过EIR分组获得除了第一蓝牙设备之外的至少一个蓝牙设备的信息。

公开(公告)号：US20120217562A1

公开(公告)日：2012-08-30

申请号：US13240873

申请日：2011-09-22

Applicant: Kyoung Han LEE

Inventor： Kyoung Han LEE

IPC: H01L29/78

CPC classification number: H01L29/7881 ,  H01L21/823487 ,  H01L27/11521 ,  H01L29/0657 ,  H01L29/402

Abstract: A semiconductor device capable of maximizing a channel area in a pillar and a method of manufacturing the same are provided. The semiconductor device includes a pillar disposed on a semiconductor substrate and having first to fourth side surfaces, a first bit line disposed in the first side surface, a storage node junction region disposed in the third side surface facing the first side surface, and a gate disposed in the second side surface or a fourth side surface facing the second surface.

Abstract translation: 提供一种能够最大化柱中的通道面积的半导体器件及其制造方法。 半导体器件包括设置在半导体衬底上并具有第一至第四侧表面的柱，设置在第一侧表面中的第一位线，设置在面向第一侧表面的第三侧表面中的存储节点结区域和栅极 设置在所述第二侧表面或面向所述第二表面的第四侧表面。

公开(公告)号：US08383477B2

公开(公告)日：2013-02-26

申请号：US12976792

申请日：2010-12-22

Applicant: Kyoung Han Lee

Inventor： Kyoung Han Lee

IPC: H01L21/8238 ,  H01L21/8242

CPC classification number: H01L27/105 ,  H01L27/108 ,  H01L27/10852 ,  H01L27/10855 ,  H01L27/10876 ,  H01L28/40 ,  H01L29/42376 ,  H01L29/66666 ,  H01L29/7827

Abstract: A semiconductor device including a vertical transistor and a method for manufacturing the same may reduce a cell area in comparison with a conventional layout of 8F2 and 6F2. Also, the method does not require forming a bit line contact, a storage node contact or a landing plug, thereby decreasing the process steps. The semiconductor device including a vertical transistor comprises: an active region formed in a semiconductor substrate; a bit line disposed in the lower portion of the active region; a word line buried in the active region; and a capacitor disposed over the upper portion of the active region and the word line.

Abstract translation: 包括垂直晶体管的半导体器件及其制造方法可以减小与8F2和6F2的常规布局相比的单元面积。 此外，该方法不需要形成位线接触，存储节点接触或着陆塞，从而减少处理步骤。 包括垂直晶体管的半导体器件包括：形成在半导体衬底中的有源区; 位于有源区的下部的位线; 埋在活跃区域的字线; 以及设置在有源区域和字线的上部上方的电容器。

公开(公告)号：US20120012913A1

公开(公告)日：2012-01-19

申请号：US12976792

申请日：2010-12-22

Applicant: Kyoung Han LEE

Inventor： Kyoung Han LEE

IPC: H01L27/108 ,  H01L21/8242

CPC classification number: H01L27/105 ,  H01L27/108 ,  H01L27/10852 ,  H01L27/10855 ,  H01L27/10876 ,  H01L28/40 ,  H01L29/42376 ,  H01L29/66666 ,  H01L29/7827

Abstract: A semiconductor device including a vertical transistor and a method for manufacturing the same may reduce a cell area in comparison with a conventional layout of 8F2 and 6F2. Also, the method does not require forming a bit line contact, a storage node contact or a landing plug, thereby decreasing the process steps. The semiconductor device including a vertical transistor comprises: an active region formed in a semiconductor substrate; a bit line disposed in the lower portion of the active region; a word line buried in the active region; and a capacitor disposed over the upper portion of the active region and the word line.

Abstract translation: 包括垂直晶体管的半导体器件及其制造方法可以减小与8F2和6F2的常规布局相比的单元面积。 此外，该方法不需要形成位线接触，存储节点接触或着陆塞，从而减少处理步骤。 包括垂直晶体管的半导体器件包括：形成在半导体衬底中的有源区; 位于有源区的下部的位线; 埋在活跃区域的字线; 以及设置在有源区域和字线的上部上方的电容器。

公开(公告)号：US08351858B2

公开(公告)日：2013-01-08

申请号：US12506387

申请日：2009-07-21

Applicant: Yong-Ho Lee ,  Sang-In Lee ,  Eun-Chul Kim ,  Kyoung-Han Lee

Inventor： Yong-Ho Lee ,  Sang-In Lee ,  Eun-Chul Kim ,  Kyoung-Han Lee

IPC: H04B7/00

CPC classification number: H04W8/005 ,  H04W84/18

Abstract: An apparatus and method for obtaining information on Bluetooth devices in a computing device using Bluetooth are provided. The method includes, if an Inquiry Response (IR) packet is received as a response to an inquiry packet, obtaining information on a first Bluetooth device transmitting the IR packet and determining whether a supplementary response indication field is enabled and, if the supplementary response indication field is enabled, receiving an Extended Inquiry Response (EIR) packet, and obtaining information on at least one Bluetooth device other than the first Bluetooth device through the EIR packet.

Abstract translation: 提供了一种使用蓝牙在计算设备中获取关于蓝牙设备的信息的设备和方法。 该方法包括如果接收到询问响应（IR）分组作为对查询分组的响应，则获取关于发送IR分组的第一蓝牙设备的信息，并确定辅助应答指示字段是否被启用，以及如果辅助响应指示 字段被启用，接收扩展查询响应（EIR）分组，以及通过EIR分组获得除了第一蓝牙设备之外的至少一个蓝牙设备的信息。