Methods and apparatus for processing substrates using model-based control
    1.
    发明授权
    Methods and apparatus for processing substrates using model-based control 有权
    使用基于模型的控制处理基板的方法和装置

    公开(公告)号:US08880210B2

    公开(公告)日:2014-11-04

    申请号:US13183520

    申请日:2011-07-15

    CPC classification number: G05D16/2046 G05B17/02 H01L21/67017 H01L21/67253

    Abstract: Methods and apparatus are disclosed herein. In some embodiments, methods of controlling process chambers may include predetermining a relationship between pressure in a processing volume and a position of an exhaust valve as a function of a process parameter; setting the process chamber to a first state having a first pressure in the processing volume and a first value of the process parameter, wherein the exhaust valve is set to a first position based on the predetermined relationship to produce the first pressure at the first value; determining a pressure control profile to control the pressure as the process chamber is changed to a second state having a second pressure and a second process parameter value from the first state; and applying the pressure control profile to control the pressure by varying the position of the exhaust valve while changing the process chamber to the second state.

    Abstract translation: 本文公开了方法和装置。 在一些实施例中,控制处理室的方法可以包括根据处理参数预先确定处理容积中的压力与排气门的位置之间的关系; 将所述处理室设定为处理容积中具有第一压力的第一状态和所述处理参数的第一值,其中所述排气阀基于所述预定关系设定在第一位置以产生所述第一值的所述第一压力; 当所述处理室改变为具有来自所述第一状态的第二压力和第二过程参数值的第二状态时,确定压力控制曲线以控制所述压力; 以及通过在将处理室改变到第二状态的同时改变排气门的位置来施加压力控制曲线来控制压力。

    Methods and Apparatus for Enhanced Gas Flow Rate Control
    2.
    发明申请
    Methods and Apparatus for Enhanced Gas Flow Rate Control 有权
    用于增强气体流量控制的方法和装置

    公开(公告)号:US20140053912A1

    公开(公告)日:2014-02-27

    申请号:US13591212

    申请日:2012-08-21

    Abstract: The present invention provides methods and apparatus for controlling gas flow to a semiconductor-processing chamber. The invention includes deactivating ratio setpoint feedback control in a flow ratio controller; initiating gas flow through the flow ratio controller; moving valves of the flow ratio controller to a preset position based on a stored position when an upstream pressure reaches a stored upstream pressure value, wherein the stored position and the stored upstream pressure value were stored during a prior process run; determining that steady state flow ratio controller output flows have been reached; and activating ratio setpoint feedback control in the flow ratio controller. Numerous additional features are disclosed.

    Abstract translation: 本发明提供了用于控制到半导体处理室的气流的方法和装置。 本发明包括流量比控制器中的停用比率设定点反馈控制; 启动气流通过流量比控制器; 当上游压力达到存储的上游压力值时,基于存储位置,将流量比控制器的阀移动到预设位置,其中在先前的处理运行期间存储所存储的位置和存储的上游压力值; 确定稳态流量比控制器输出流量已达到; 和流量比控制器中的启动比设定点反馈控制。 公开了许多附加特征。

    REAL TIME LEAD-LINE CHARACTERIZATION FOR MFC FLOW VERIFICATION
    3.
    发明申请
    REAL TIME LEAD-LINE CHARACTERIZATION FOR MFC FLOW VERIFICATION 有权
    用于MFC流量验证的实时导线特征

    公开(公告)号:US20090266139A1

    公开(公告)日:2009-10-29

    申请号:US12427947

    申请日:2009-04-22

    CPC classification number: G01F25/003 G01F25/0038 Y10T137/0324 Y10T137/7759

    Abstract: A method and apparatus that solve the problem of accurate measurement of gas flow so that the delivery of gases in semiconductor processing may be performed with greater confidence and accuracy by performing real-time characterization of a lead-line for mass flow controller (MFC) flow verification are provided. In one embodiment a mass flow verifier (MFV) provides rate of rise information to a controller via a digital interface without correcting for lead-line influences. After receiving the rate of rise data from the tool host computer computes a gas mass correction factor in real-time based on at least one of the following: MFC temperature sensor data, lead-line temperature sensor data, lead-line pressure transducer data, and lead-line volume. The rate of rise data and gas mass correction factor are used to compute accurate mass flow. The accurate mass flow information may be used to calibrate the MFC.

    Abstract translation: 一种解决气体流量精确测量问题的方法和装置,可以通过对质量流量控制器(MFC)流程的引线进行实时表征,以更高的置信度和准确性进行半导体处理中的气体输送 提供验证。 在一个实施例中,质量流量验证器(MFV)通过数字接口向控制器提供上升信息速率,而不会对引线影响进行校正。 在从刀具主机接收到上升数据之后,基于以下至少一个实时计算气体质量校正因子:MFC温度传感器数据,引线温度传感器数据,引线压力传感器数据, 和引线量。 上升率和气体质量校正因子用于计算精确质量流量。 准确的质量流量信息可用于校准MFC。

    Electromagnetically levitated substrate support
    4.
    发明授权
    Electromagnetically levitated substrate support 有权
    电磁悬浮底物载体

    公开(公告)号:US06800833B2

    公开(公告)日:2004-10-05

    申请号:US10114014

    申请日:2002-03-29

    CPC classification number: H01L21/68792 C30B25/12 C30B31/14

    Abstract: An apparatus for supporting a substrate and a method for positioning a substrate include a substrate support, a stator circumscribing the substrate support, and an actuator. The actuator is coupled to the stator and adapted to change the elevation of the stator and/or adjust an angular orientation of the stator relative to its central axis. As the substrate support is magnetically coupled to the stator, a position, i.e., elevation and angular orientation, of the substrate support may be controlled.

    Abstract translation: 用于支撑基板的设备和用于定位基板的方法包括基板支撑件,限定基板支撑件的定子和致动器。 致动器联接到定子并且适于改变定子的高度和/或调节定子相对于其中心轴线的角度取向。 当衬底支撑件磁耦合到定子时,可以控制衬底支撑件的位置,即高度和角度取向。

    N-CHANNEL FLOW RATIO CONTROLLER CALIBRATION
    6.
    发明申请
    N-CHANNEL FLOW RATIO CONTROLLER CALIBRATION 有权
    N通道流量比控制器校准

    公开(公告)号:US20130233401A1

    公开(公告)日:2013-09-12

    申请号:US13846007

    申请日:2013-03-18

    Abstract: Embodiments of the present invention generally relate to methods of controlling gas flow in etching chambers. The methods generally include splitting a single process gas supply source into multiple inputs of separate process chambers, such that each chamber processes substrates under uniform processing conditions. The method generally includes using a mass flow controller as a reference for calibrating a flow ratio controller. A span correction factor may be determined to account for the difference between the actual flow and the measured flow through the flow ratio controller. The span correction factors may be used to determine corrected set points for each channel of the flow controller using equations provided herein. Furthermore, the set points of the flow ratio controller may be made gas-independent using additional equations provided herein.

    Abstract translation: 本发明的实施例一般涉及控制蚀刻室中的气流的方法。 这些方法通常包括将单个工艺气体供应源分离成单独的处理室的多个输入,使得每个室在均匀的处理条件下处理衬底。 该方法通常包括使用质量流量控制器作为校准流量比控制器的参考。 可以确定跨度校正因子以解决通过流量比控制器的实际流量和测量流量之间的差异。 跨度校正因子可以用于使用本文提供的等式来确定流量控制器的每个通道的校正设定点。 此外,可以使用本文提供的附加方程式将流量比控制器的设定点与气体无关。

    N-channel flow ratio controller calibration

    公开(公告)号:US08397739B2

    公开(公告)日:2013-03-19

    申请号:US12986012

    申请日:2011-01-06

    Abstract: Embodiments of the present invention generally relate to methods of controlling gas flow in etching chambers. The methods generally include splitting a single process gas supply source into multiple inputs of separate process chambers, such that each chamber processes substrates under uniform processing conditions. The method generally includes using a mass flow controller as a reference for calibrating a flow ratio controller. A span correction factor may be determined to account for the difference between the actual flow and the measured flow through the flow ratio controller. The span correction factors may be used to determine corrected set points for each channel of the flow controller using equations provided herein. Furthermore, the set points of the flow ratio controller may be made gas-independent using additional equations provided herein.

    N-channel flow ratio controller calibration
    8.
    发明授权
    N-channel flow ratio controller calibration 有权
    N通道流量比控制器校准

    公开(公告)号:US09200754B2

    公开(公告)日:2015-12-01

    申请号:US13846007

    申请日:2013-03-18

    Abstract: Embodiments of the present invention generally relate to methods of controlling gas flow in etching chambers. The methods generally include splitting a single process gas supply source into multiple inputs of separate process chambers, such that each chamber processes substrates under uniform processing conditions. The method generally includes using a mass flow controller as a reference for calibrating a flow ratio controller. A span correction factor may be determined to account for the difference between the actual flow and the measured flow through the flow ratio controller. The span correction factors may be used to determine corrected set points for each channel of the flow controller using equations provided herein. Furthermore, the set points of the flow ratio controller may be made gas-independent using additional equations provided herein.

    Abstract translation: 本发明的实施例一般涉及控制蚀刻室中的气流的方法。 这些方法通常包括将单个工艺气体供应源分离成单独的处理室的多个输入,使得每个室在均匀的处理条件下处理衬底。 该方法通常包括使用质量流量控制器作为校准流量比控制器的参考。 可以确定跨度校正因子以解决通过流量比控制器的实际流量和测量流量之间的差异。 跨度校正因子可以用于使用本文提供的等式来确定流量控制器的每个通道的校正设定点。 此外,可以使用本文提供的附加方程式将流量比控制器的设定点与气体无关。

    N-CHANNEL FLOW RATIO CONTROLLER CALIBRATION
    10.
    发明申请
    N-CHANNEL FLOW RATIO CONTROLLER CALIBRATION 有权
    N通道流量比控制器校准

    公开(公告)号:US20110178628A1

    公开(公告)日:2011-07-21

    申请号:US12986012

    申请日:2011-01-06

    Abstract: Embodiments of the present invention generally relate to methods of controlling gas flow in etching chambers. The methods generally include splitting a single process gas supply source into multiple inputs of separate process chambers, such that each chamber processes substrates under uniform processing conditions. The method generally includes using a mass flow controller as a reference for calibrating a flow ratio controller. A span correction factor may be determined to account for the difference between the actual flow and the measured flow through the flow ratio controller. The span correction factors may be used to determine corrected set points for each channel of the flow controller using equations provided herein. Furthermore, the set points of the flow ratio controller may be made gas-independent using additional equations provided herein.

    Abstract translation: 本发明的实施例一般涉及控制蚀刻室中的气流的方法。 这些方法通常包括将单个工艺气体供应源分离成单独的处理室的多个输入,使得每个室在均匀的处理条件下处理衬底。 该方法通常包括使用质量流量控制器作为校准流量比控制器的参考。 可以确定跨度校正因子以解决通过流量比控制器的实际流量和测量流量之间的差异。 跨度校正因子可以用于使用本文提供的等式来确定流量控制器的每个通道的校正设定点。 此外,可以使用本文提供的附加方程式将流量比控制器的设定点与气体无关。

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