公开(公告)号：US09923077B2

公开(公告)日：2018-03-20

申请号：US15093896

申请日：2016-04-08

申请人： Yoon-tae Hwang ,  Ki-joong Yoon ,  Moon-kyu Park ,  Sang-jin Hyun ,  Hoon-joo Na

发明人： Yoon-tae Hwang ,  Ki-joong Yoon ,  Moon-kyu Park ,  Sang-jin Hyun ,  Hoon-joo Na

IPC分类号： H01L21/28 ,  H01L21/02 ,  H01L29/40 ,  H01L29/423 ,  H01L29/51 ,  H01L29/49 ,  H01L29/78

CPC分类号： H01L29/513 ,  H01L21/28176 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/78

摘要： A method of curing a dielectric layer, such as a dielectric layer that has a relatively small thickness and/or a narrow width or a complicated shape, is provided. The method of curing a dielectric layer for the manufacture of a semiconductor device includes providing the dielectric layer, wherein the dielectric layer is on a semiconductor layer; forming a first metal-containing layer on the dielectric layer; forming a curing atom screening region in an upper portion of the first metal-containing layer by injecting screening atoms onto an upper surface of the first metal-containing layer; injecting curing atoms into the first metal-containing layer through the upper surface of the first metal-containing layer; and flowing the curing atoms into the dielectric layer in an atmosphere at a first temperature.

公开(公告)号：US20160307762A1

公开(公告)日：2016-10-20

申请号：US15093896

申请日：2016-04-08

申请人： Yoon-tae Hwang ,  Ki-joong Yoon ,  Moon-kyu Park ,  Sang-jin Hyun ,  Hoon-joo Na

发明人： Yoon-tae Hwang ,  Ki-joong Yoon ,  Moon-kyu Park ,  Sang-jin Hyun ,  Hoon-joo Na

IPC分类号： H01L21/28 ,  H01L29/40 ,  H01L29/423 ,  H01L21/02

CPC分类号： H01L29/513 ,  H01L21/28176 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/78

摘要： A method of curing a dielectric layer, such as a dielectric layer that has a relatively small thickness and/or a narrow width or a complicated shape, is provided. The method of curing a dielectric layer for the manufacture of a semiconductor device includes providing the dielectric layer, wherein the dielectric layer is on a semiconductor layer; forming a first metal-containing layer on the dielectric layer; forming a curing atom screening region in an upper portion of the first metal-containing layer by injecting screening atoms onto an upper surface of the first metal-containing layer; injecting curing atoms into the first metal-containing layer through the upper surface of the first metal-containing layer; and flowing the curing atoms into the dielectric layer in an atmosphere at a first temperature.

摘要翻译： 提供固化电介质层的方法，例如具有相对较小厚度和/或窄宽度或复杂形状的电介质层。 固化用于制造半导体器件的电介质层的方法包括提供介电层，其中介电层在半导体层上; 在介电层上形成第一含金属层; 通过将筛选原子注入第一含金属层的上表面，在第一含金属层的上部形成固化原子筛选区; 通过第一含金属层的上表面将固化原子注入第一含金属层; 并在第一温度的气氛中将固化原子流入电介质层。

公开(公告)号：US20140374840A1

公开(公告)日：2014-12-25

申请号：US14312109

申请日：2014-06-23

申请人： Hye-Lan Lee ,  Sang-Bom Kang ,  Jae-Jung Kim ,  Moon-Kyu Park ,  Jae-Yeol Song ,  June-Hee Lee ,  Yong-Ho Ha ,  Sang-Jin Hyun

发明人： Hye-Lan Lee ,  Sang-Bom Kang ,  Jae-Jung Kim ,  Moon-Kyu Park ,  Jae-Yeol Song ,  June-Hee Lee ,  Yong-Ho Ha ,  Sang-Jin Hyun

IPC分类号： H01L27/088

CPC分类号： H01L27/0886 ,  H01L21/823821 ,  H01L21/823842 ,  H01L21/82385 ,  H01L21/845 ,  H01L27/0924 ,  H01L27/1211 ,  H01L29/165 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66545

摘要： A semiconductor device includes a substrate and first and second gate electrodes on the substrate. The first gate electrode includes a first gate insulation film having a bottom portion on the substrate and sidewall portions extending from the bottom portion and away from the substrate defining a first trench having a first width and a first functional film filling the first trench. The second gate electrode includes a second gate insulation film having a bottom portion on the substrate and sidewall portions extending from the bottom portion defining a second trench having a second width different from the first width, a second functional film conforming to the second gate insulation film in the second trench and defining a third trench, and a metal region in the third trench. The first width may be less than the second width.

摘要翻译： 半导体器件包括衬底和衬底上的第一和第二栅电极。 第一栅极电极包括第一栅极绝缘膜，该第一栅极绝缘膜具有在基板上的底部部分以及侧壁部分，其从底部延伸并远离基板限定具有第一宽度的第一沟槽和填充第一沟槽的第一功能膜。 所述第二栅电极包括第二栅极绝缘膜，所述第二栅极绝缘膜具有在所述基板上的底部部分和从所述底部部分延伸的侧壁部分，所述侧壁部分限定具有不同于所述第一宽度的第二宽度的第二沟槽;第二功能膜， 在第二沟槽中并且限定第三沟槽，以及第三沟槽中的金属区域。 第一宽度可以小于第二宽度。

公开(公告)号：US09337057B2

公开(公告)日：2016-05-10

申请号：US14802467

申请日：2015-07-17

申请人： Moon-Kyu Park ,  Oh-Seong Kwon ,  Sung-Kee Han ,  Sang-Jin Hyun

发明人： Moon-Kyu Park ,  Oh-Seong Kwon ,  Sung-Kee Han ,  Sang-Jin Hyun

IPC分类号： H01L21/3215 ,  H01L29/40 ,  H01L21/28

CPC分类号： H01L21/28088 ,  H01L21/3105 ,  H01L21/823842 ,  H01L27/092 ,  H01L29/517 ,  H01L29/66545

摘要： Provided are methods for fabricating semiconductor devices. The methods for fabricating the semiconductor devices may include forming a first interlayer insulation film including a trench on a substrate, forming a high-k layer along an inner sidewall and a bottom surface of the trench, forming a first work function control film including impurities along the high-k layer, removing the impurities from the first work function control film to reduce surface resistance of the first work function control film by about 30% to about 60% and forming a gate metal in the trench.

摘要翻译： 提供制造半导体器件的方法。 制造半导体器件的方法可以包括在衬底上形成包括沟槽的第一层间绝缘膜，沿着沟槽的内侧壁和底表面形成高k层，形成包含杂质的第一功函数控制膜 高k层，从第一功函数控制膜去除杂质，以使第一功函数控制膜的表面电阻降低约30％至约60％，并在沟槽中形成栅极金属。

公开(公告)号：US20160020118A1

公开(公告)日：2016-01-21

申请号：US14802467

申请日：2015-07-17

申请人： Moon-Kyu PARK ,  Oh-Seong KWON ,  Sung-Kee HAN ,  Sang-Jin HYUN

发明人： Moon-Kyu PARK ,  Oh-Seong KWON ,  Sung-Kee HAN ,  Sang-Jin HYUN

IPC分类号： H01L21/3215 ,  H01L21/28 ,  H01L29/40

CPC分类号： H01L21/28088 ,  H01L21/3105 ,  H01L21/823842 ,  H01L27/092 ,  H01L29/517 ,  H01L29/66545

摘要： Provided are methods for fabricating semiconductor devices. The methods for fabricating the semiconductor devices may include forming a first interlayer insulation film including a trench on a substrate, forming a high-k layer along an inner sidewall and a bottom surface of the trench, forming a first work function control film including impurities along the high-k layer, removing the impurities from the first work function control film to reduce surface resistance of the first work function control film by about 30% to about 60% and forming a gate metal in the trench.

摘要翻译： 提供制造半导体器件的方法。 制造半导体器件的方法可以包括在衬底上形成包括沟槽的第一层间绝缘膜，沿着沟槽的内侧壁和底表面形成高k层，形成包含杂质的第一功函数控制膜 高k层，从第一功函数控制膜去除杂质，以使第一功函数控制膜的表面电阻降低约30％至约60％，并在沟槽中形成栅极金属。