公开(公告)号：US07863628B2

公开(公告)日：2011-01-04

申请号：US12031287

申请日：2008-02-14

申请人： Byoung Lyong Choi ,  Kyung Sang Cho ,  Eun Kyung Lee ,  O Gweon Seo

发明人： Byoung Lyong Choi ,  Kyung Sang Cho ,  Eun Kyung Lee ,  O Gweon Seo

IPC分类号： H01L27/15

CPC分类号： H01L51/5296 ,  B82Y20/00 ,  H01L51/0545 ,  H01L51/5012 ,  H01L51/5203

摘要： Disclosed is a light-emitting device using a transistor structure, including a substrate, a first gate electrode, a first insulating layer, a source electrode, a drain electrode, and a light-emitting layer formed between the source electrode and the drain electrode in a direction parallel to these electrodes. In the light-emitting device using the transistor structure, it is possible to adjust the mobility of electrons or holes and to selectively set a light-emitting region through the control of the magnitude of voltage applied to the gate electrode, thus increasing the lifespan of the light-emitting device, facilitating the manufacturing process thereof, and realizing light-emitting or light-receiving properties having high efficiency and high purity.

摘要翻译： 公开了一种使用晶体管结构的发光装置，其包括基板，第一栅电极，第一绝缘层，源电极，漏电极和形成在源电极和漏电极之间的发光层， 与这些电极平行的方向。 在使用晶体管结构的发光装置中，可以通过控制施加到栅电极的电压的大小来调节电子或空穴的迁移率并选择性地设置发光区域，从而增加寿命 发光装置，便于其制造工艺，并实现高效率和高纯度的发光或光接收性能。

公开(公告)号：US07119638B2

公开(公告)日：2006-10-10

申请号：US10827348

申请日：2004-04-20

申请人： Chan-bong Jun ,  O-gweon Seo

发明人： Chan-bong Jun ,  O-gweon Seo

IPC分类号： H03H9/15 ,  H03H3/02

CPC分类号： H03H9/173 ,  H03H3/02 ,  H03H2003/021 ,  Y10T29/42

摘要： A film bulk acoustic resonator (FBAR) includes a resistance layer deposited on the upper surface of a semiconductor substrate and having a recess therein, a membrane layer on the upper surfaces of the resistance layer and the recess, thereby forming an air gap between the membrane layer and the semiconductor substrate, and a resonator having a lower electrode, a piezoelectric layer, and an upper electrode deposited on the membrane layer. The resistance layer may include first and second resistance layers, the first resistance layer having the recess therein and the second resistance layer being deposited on the upper surfaces of the recess. Thus, the air gap is formed without etching the semiconductor substrate, enhancing the resonant characteristics of the FBAR. Active and/or passive devices can be formed underneath the air gap to be integrated with the FBAR.

摘要翻译： 薄膜体声波谐振器（FBAR）包括沉积在半导体衬底的上表面上并具有凹部的电阻层，电阻层的上表面上的膜层和凹部，从而在膜之间形成气隙 层和半导体衬底，以及具有沉积在膜层上的下电极，压电层和上电极的谐振器。 电阻层可以包括第一和第二电阻层，第一电阻层具有凹部，第二电阻层沉积在凹部的上表面上。 因此，在不蚀刻半导体衬底的情况下形成气隙，增强了FBAR的谐振特性。 有源和/或无源器件可以形成在气隙下面以与FBAR集成。

公开(公告)号：US06590473B1

公开(公告)日：2003-07-08

申请号：US09689590

申请日：2000-10-13

申请人： O-Gweon Seo ,  Duck-Su Kim

发明人： O-Gweon Seo ,  Duck-Su Kim

IPC分类号： H03H701

CPC分类号： H01L27/08 ,  H01F17/0006 ,  H01F41/042 ,  H01L23/66 ,  H01L2924/0002 ,  H01L2924/00

摘要： A thin-film bandpass filter is provided. The thin-film bandpass filter includes a substrate, a plurality of first capacitors formed on the substrate, each being electrically connected in series, at least one second capacitor electrically connected to branch terminals positioned between the plurality of first capacitors, an inductor electrically connected in parallel to the second capacitor, and a plurality of supports for propping up the inductor so that the inductor is separated a predetermined space above the substrate and/or the second capacitor. The first and second capacitors, respectively, include a first metal layer, a dielectric layer, and a second metal layer, all of which are sequentially formed on the substrate. The inductor is comprised of a predetermined pattern of a thin-film metal layer propped by the plurality of supports, to both ends of which are electrically connected to the first and second metal layers of the second capacitor, and suspended by the substrate and/or the second capacitor. Due to a structure in which the inductor is suspended by the substrate and/or the capacitor that the thin-film bandpass filter has, the parasitic capacitance can be minimized, thereby enhancing the Q factor and minimizing the insertion loss of the filter. Furthermore, the overall size of the filter is significantly reduced by forming at least a portion of an inductor on the capacitor.

摘要翻译： 提供薄膜带通滤波器。 薄膜带通滤波器包括基板，形成在基板上的多个第一电容器，每个第一电容器串联电连接;至少一个第二电容器电连接到位于多个第一电容器之间的分支端子，电感器电连接在 平行于第二电容器的多个支撑件，以及用于支撑电感器的多个支撑件，使得电感器在衬底和/或第二电容器上方分隔预定空间。 第一和第二电容器分别包括第一金属层，电介质层和第二金属层，所有这些都依次形成在基板上。 所述电感器包括由所述多个支撑体支撑的薄膜金属层的预定图案，其两端电连接到所述第二电容器的所述第一和第二金属层，并被所述基板和/或 第二电容器。 由于电感器被薄膜带通滤波器所具有的衬底和/或电容器悬置的结构，寄生电容可以最小化，从而提高Q因子并最小化滤波器的插入损耗。 此外，通过在电容器上形成电感器的至少一部分，可以显着降低滤波器的总体尺寸。

公开(公告)号：US20090008628A1

公开(公告)日：2009-01-08

申请号：US12031287

申请日：2008-02-14

申请人： Byoung Lyong CHOI ,  Kyung Sang CHO ,  Eun Kyung LEE ,  O Gweon SEO

发明人： Byoung Lyong CHOI ,  Kyung Sang CHO ,  Eun Kyung LEE ,  O Gweon SEO

IPC分类号： H01L33/00 ,  H01L29/08 ,  H01L29/06

CPC分类号： H01L51/5296 ,  B82Y20/00 ,  H01L51/0545 ,  H01L51/5012 ,  H01L51/5203

摘要： Disclosed is a light-emitting device using a transistor structure, including a substrate, a first gate electrode, a first insulating layer, a source electrode, a drain electrode, and a light-emitting layer formed between the source electrode and the drain electrode in a direction parallel to these electrodes. In the light-emitting device using the transistor structure, it is possible to adjust the mobility of electrons or holes and to selectively set a light-emitting region through the control of the magnitude of voltage applied to the gate electrode, thus increasing the lifespan of the light-emitting device, facilitating the manufacturing process thereof, and realizing light-emitting or light-receiving properties having high efficiency and high purity.

摘要翻译： 公开了一种使用晶体管结构的发光装置，其包括基板，第一栅电极，第一绝缘层，源电极，漏电极和形成在源电极和漏电极之间的发光层， 与这些电极平行的方向。 在使用晶体管结构的发光装置中，可以通过控制施加到栅电极的电压的大小来调节电子或空穴的迁移率并选择性地设置发光区域，从而增加寿命 发光装置，便于其制造工艺，并实现高效率和高纯度的发光或光接收性能。

公开(公告)号：US06296346B1

公开(公告)日：2001-10-02

申请号：US09285238

申请日：1999-04-02

申请人： O-Gweon Seo ,  Seung-Ho Nam ,  Byoung-Lyong Choi ,  Young-Jin Song

发明人： O-Gweon Seo ,  Seung-Ho Nam ,  Byoung-Lyong Choi ,  Young-Jin Song

IPC分类号： B41J204

CPC分类号： B41J2/14008

摘要： An apparatus for jetting ink utilizing a lamb wave and a method for producing the same, the apparatus including an ink chamber having nozzles, and an ejecting force source for supplying an ejecting force to eject the ink out of the nozzles. The ejecting force source includes inter-digital transducer electrodes for applying a voltage of a predetermined voltage, a piezoelectric element for generating the lamb wave by means of the voltage applied from the inter-digital transducer electrodes. Thus, as the voltage is applied to the inter-digital transducer electrodes, the lamb wave is generated from the lamb wave generating board, and the ink reserved in the ink chamber is ejected out of the nozzles.

摘要翻译： 一种利用兰姆波喷射墨水的装置及其制造方法，该装置包括具有喷嘴的墨水室，以及用于提供喷射力以将墨水喷射出喷嘴的喷射力源。 喷射力源包括用于施加预定电压的电压的数字式换能器电极，用于通过从数字式换能器电极施加的电压产生兰姆波的压电元件。 因此，当电压施加到数字式换能器电极时，从兰姆波发​​生板产生兰姆波，并且将留在墨室中的墨喷射出喷嘴。

公开(公告)号：US20070172591A1

公开(公告)日：2007-07-26

申请号：US11625016

申请日：2007-01-19

申请人： O-gweon SEO ,  Jungyol JO

发明人： O-gweon SEO ,  Jungyol JO

IPC分类号： C23C16/00 ,  B05D7/00

CPC分类号： C23C16/0272 ,  C23C16/407 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/7869

摘要： Provided is a method of fabricating a low temperature ZnO polycrystalline film and a thin film transistor (TFT) adopting the low temperature ZnO polycrystalline film. The method includes growing ZnO on a substrate at a first temperature for a first time using Metal Organic Chemical Vapor Deposition (MOCVD) to form a ZnO buffer layer, and heating the substrate at a temperature lower than the first temperature to grow ZnO on the ZnO buffer layer for a second time longer than the first time so as to form a ZnO film.

摘要翻译： 提供一种制造低温ZnO多晶膜和采用低温ZnO多晶膜的薄膜晶体管（TFT）的方法。 该方法包括使用金属有机化学气相沉积（MOCVD）在第一温度下在衬底上生长ZnO以形成ZnO缓冲层，并在低于第一温度的温度下加热衬底以在ZnO上生长ZnO 缓冲层比第一次长第二次以形成ZnO膜。

公开(公告)号：US20060134533A1

公开(公告)日：2006-06-22

申请号：US11295636

申请日：2005-12-07

申请人： O-gweon Seo ,  Kae-dong Back ,  Chang-seung Lee ,  Kyu-sik Kim ,  Duck-su Kim ,  Byoung-ho Cheong

发明人： O-gweon Seo ,  Kae-dong Back ,  Chang-seung Lee ,  Kyu-sik Kim ,  Duck-su Kim ,  Byoung-ho Cheong

IPC分类号： G03F1/00

CPC分类号： G02B5/003 ,  G02B1/11 ,  G02B3/0006 ,  G02B3/0018 ,  G03C1/00

摘要： A method of fabricating a one-way transparent optical system by which external light is effectively intercepted and internal light passes nearly without loss is provided. The method includes: forming a silver halide on a transparent substrate; aligning a mask in which a predetermined pattern is formed, on the transparent substrate and exposing the silver halide using the mask; developing and fixing the exposed silver halide and forming a plurality of light-absorbing materials on the transparent substrate; and forming protrusion structures having a shape of a convex lens shape for refracting incident light toward a corresponding light-absorbing material of the light-absorbing materials, on the transparent substrate on which the light-absorbing materials are formed.

公开(公告)号：US07625693B2

公开(公告)日：2009-12-01

申请号：US11295636

申请日：2005-12-07

申请人： O-gweon Seo ,  Kae-dong Back ,  Chang-seung Lee ,  Kyu-sik Kim ,  Duck-su Kim ,  Byoung-ho Cheong

发明人： O-gweon Seo ,  Kae-dong Back ,  Chang-seung Lee ,  Kyu-sik Kim ,  Duck-su Kim ,  Byoung-ho Cheong

IPC分类号： G03F1/00

CPC分类号： G02B5/003 ,  G02B1/11 ,  G02B3/0006 ,  G02B3/0018 ,  G03C1/00

摘要： A method of fabricating a one-way transparent optical system by which external light is effectively intercepted and internal light passes nearly without loss is provided. The method includes: forming a silver halide on a transparent substrate; aligning a mask in which a predetermined pattern is formed, on the transparent substrate and exposing the silver halide using the mask; developing and fixing the exposed silver halide and forming a plurality of light-absorbing materials on the transparent substrate; and forming protrusion structures having a shape of a convex lens shape for refracting incident light toward a corresponding light-absorbing material of the light-absorbing materials, on the transparent substrate on which the light-absorbing materials are formed.

摘要翻译： 提供了一种制造单向透明光学系统的方法，通过该方法可以有效地遮断外部光线，并且内部光线几乎没有损失。 该方法包括：在透明基板上形成卤化银; 将形成有预定图案的掩模对准在透明基板上，并使用掩模曝光卤化银; 显影和固定曝光的卤化银并在透明基板上形成多个光吸收材料; 以及在其上形成有光吸收材料的透明基板上形成具有用于将入射光折射到相应的光吸收材料的光吸收材料的凸透镜形状的突起结构。

公开(公告)号：US5514260A

公开(公告)日：1996-05-07

申请号：US391601

申请日：1995-02-21

申请人： O. Gweon Seo

发明人： O. Gweon Seo

IPC分类号： C23C14/32 ,  C23C14/34 ,  C23C14/56

CPC分类号： C23C14/56 ,  C23C14/32 ,  C23C14/34

摘要： The present invention relates to an apparatus for simultaneous plating with which arc ion plating and hollow cathode discharge (HCD) ion plating can be concurrently carried out in one chamber, and sputtering plating can also be performed in the other chamber while the former two types of platings are being performed. Since only one type of plating can be performed in one chamber with a conventional apparatus, there have been problems such as excessive installation cost and inferior plating quality. According to the present invention, simultaneous arc ion plating and HCD ion plating in one chamber and sputtering plating in the other one is possible, which may lower the installation cost and improve the plating quality.

摘要翻译： 本发明涉及一种用于同时电镀的装置，其中可以在一个室中同时进行电弧离子镀和中空阴极放电（HCD）离子电镀，并且溅射镀还可以在另一个室中进行，而前两种 正在进行电镀。 由于在一个室中只能使用一种类型的电镀，所以存在过度的安装成本和劣化的电镀质量等问题。 根据本发明，可以在一个室中进行同时电弧离子电镀和HCD离子电镀，另一个中进行溅射镀覆，这可能降低安装成本并提高电镀质量。