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    Method of fabricating one-way transparent optical system
    2.
    发明授权
    Method of fabricating one-way transparent optical system 有权
    制造单向透明光学系统的方法

    公开(公告)号：US07625693B2

    公开(公告)日：2009-12-01

    申请号：US11295636

    申请日：2005-12-07

    申请人： O-gweon Seo ,  Kae-dong Back ,  Chang-seung Lee ,  Kyu-sik Kim ,  Duck-su Kim ,  Byoung-ho Cheong

    发明人： O-gweon Seo ,  Kae-dong Back ,  Chang-seung Lee ,  Kyu-sik Kim ,  Duck-su Kim ,  Byoung-ho Cheong

    IPC分类号： G03F1/00

    CPC分类号： G02B5/003 ,  G02B1/11 ,  G02B3/0006 ,  G02B3/0018 ,  G03C1/00

    摘要： A method of fabricating a one-way transparent optical system by which external light is effectively intercepted and internal light passes nearly without loss is provided. The method includes: forming a silver halide on a transparent substrate; aligning a mask in which a predetermined pattern is formed, on the transparent substrate and exposing the silver halide using the mask; developing and fixing the exposed silver halide and forming a plurality of light-absorbing materials on the transparent substrate; and forming protrusion structures having a shape of a convex lens shape for refracting incident light toward a corresponding light-absorbing material of the light-absorbing materials, on the transparent substrate on which the light-absorbing materials are formed.

    摘要翻译： 提供了一种制造单向透明光学系统的方法，通过该方法可以有效地遮断外部光线，并且内部光线几乎没有损失。 该方法包括：在透明基板上形成卤化银; 将形成有预定图案的掩模对准在透明基板上，并使用掩模曝光卤化银; 显影和固定曝光的卤化银并在透明基板上形成多个光吸收材料; 以及在其上形成有光吸收材料的透明基板上形成具有用于将入射光折射到相应的光吸收材料的光吸收材料的凸透镜形状的突起结构。

    Organic thin film transistor for liquid crystal display and method of manufacturing the same
    5.
    发明申请
    Organic thin film transistor for liquid crystal display and method of manufacturing the same 审中-公开
    液晶显示器用有机薄膜晶体管及其制造方法

    公开(公告)号：US20070026536A1

    公开(公告)日：2007-02-01

    申请号：US11447970

    申请日：2006-06-07

    申请人： Kyu-sik Kim ,  Bo-sung Kim ,  Jung-han Shin ,  Mun-pyo Hong

    发明人： Kyu-sik Kim ,  Bo-sung Kim ,  Jung-han Shin ,  Mun-pyo Hong

    IPC分类号： H01L21/00

    CPC分类号： H01L51/10 ,  H01L51/0545 ,  H01L51/107

    摘要： An organic thin film transistor for a liquid crystal display and a method of manufacturing an organic thin film transistor. The method of manufacturing an organic thin film transistor for a liquid crystal display comprises forming a gate conductive film pattern on a substrate; forming a gate insulating film on the substrate and the gate conductive film pattern; forming source and drain electrodes on the gate insulating film; forming an organic semiconductor thin film on an exposed surface of the gate insulating film and the source and drain electrodes; and forming a diamond-like-carbon thin film as an alignment film. A passivation film and the alignment film can both be provided using the diamond-like-carbon thin film.

    摘要翻译： 一种用于液晶显示器的有机薄膜晶体管和一种制造有机薄膜晶体管的方法。 制造液晶显示器用有机薄膜晶体管的方法包括在基板上形成栅极导电膜图案; 在基板和栅极导电膜图案上形成栅极绝缘膜; 在栅极绝缘膜上形成源极和漏极; 在所述栅极绝缘膜和所述源极和漏极的暴露表面上形成有机半导体薄膜; 并形成类金刚石碳薄膜作为取向膜。 可以使用类金刚石碳薄膜来提供钝化膜和取向膜。

    MEMS switch and method of fabricating the same
    6.
    发明申请
    MEMS switch and method of fabricating the same 有权

    公开(公告)号：US20060131147A1

    公开(公告)日：2006-06-22

    申请号：US11251804

    申请日：2005-10-18

    申请人： Che-heung Kim ,  Hyung-jae Shin ,  Soon-cheol Kweon ,  Kyu-sik Kim ,  Sang-hun Lee

    发明人： Che-heung Kim ,  Hyung-jae Shin ,  Soon-cheol Kweon ,  Kyu-sik Kim ,  Sang-hun Lee

    IPC分类号： H01H57/00 ,  H02N1/00

    CPC分类号： H01H59/0009 ,  H01H2059/0054

    摘要： A micro electro mechanical system switch and a method of fabricating the micro electro mechanical system switch. The micro electro mechanical system switch includes a substrate, a plurality of signal lines formed on the substrate and including switching contact points and a plurality of immovable electrodes formed among the signal lines on the substrate. A plurality of anchors protrude from the substrate to predetermined heights and support at least two actuating beams installed on an identical plane so as to move up and down. A connecting unit connects the at least two actuating beams. A support unit provided on the substrate supports the connecting unit and contacting plates are installed on lower surfaces of the at least two actuating beams so as to contact the switching contact points.

    Method of manufacturing a memory device having improved erasing characteristics
    10.
    发明授权
    Method of manufacturing a memory device having improved erasing characteristics 有权
    具有改善擦除特性的存储器件的制造方法

    公开(公告)号：US07402492B2

    公开(公告)日：2008-07-22

    申请号：US11385642

    申请日：2006-03-21

    申请人： Sang-hun Jeon ,  Kyu-sik Kim ,  Chung-woo Kim ,  Sung-ho Park ,  Yo-sep Min ,  Jeong-hee Han

    发明人： Sang-hun Jeon ,  Kyu-sik Kim ,  Chung-woo Kim ,  Sung-ho Park ,  Yo-sep Min ,  Jeong-hee Han

    IPC分类号： H01L21/336

    CPC分类号： H01L21/324 ,  H01L21/28273 ,  H01L21/28282

    摘要： In a method of manufacturing a memory device having improved erasing characteristics, the method includes sequentially forming a tunneling oxide layer, a charge storing layer, and a blocking oxide layer on a semiconductor substrate; annealing the semiconductor substrate including the tunneling oxide layer, the charge storing layer, and the blocking oxide layer under a gas atmosphere so that the blocking oxide layer has a negative fixed oxide charge; forming a gate electrode on the blocking oxide layer with the negative fixed oxide charge and etching the tunneling oxide layer, the charge storing layer, and the blocking oxide layer to form a gate structure; and forming a first doped region and a second doped region in the semiconductor substrate at sides of the gate structure by doping the semiconductor substrate with a dopant.

    摘要翻译： 在制造具有改善的擦除特性的存储器件的方法中，该方法包括在半导体衬底上依次形成隧穿氧化物层，电荷存储层和阻挡氧化物层; 在气体气氛下退火包括隧道氧化物层，电荷存储层和阻挡氧化物层的半导体衬底，使得阻挡氧化物层具有负的固定氧化物电荷; 在阻挡氧化物层上形成具有负固定氧化物电荷的栅电极，蚀刻隧道氧化物层，电荷存储层和阻挡氧化物层以形成栅极结构; 以及通过用掺杂剂掺杂半导体衬底，在栅极结构的侧面在半导体衬底中形成第一掺杂区和第二掺杂区。