公开(公告)号：US20180374959A1

公开(公告)日：2018-12-27

申请号：US16117761

申请日：2018-08-30

Applicant: TOKYO INSTITUTE OF TECHNOLOGY ,  AGC Inc.

Inventor： Hideo HOSONO ,  Toshio KAMIYA ,  Hideya KUMOMI ,  Junghwan KIM ,  Nobuhiro NAKAMURA ,  Satoru WATANABE ,  Naomichi MIYAKAWA

IPC: H01L29/786 ,  H01L29/417 ,  H01L29/423 ,  H01L23/532 ,  H01L23/31

Abstract: An oxide semiconductor compound includes gallium; and oxygen. An optical band gap is 3.4 eV or more. An electron Hall mobility obtained by performing a Hall measurement at a temperature of 300 K is 3 cm2/Vs or more.

公开(公告)号：US20220037605A1

公开(公告)日：2022-02-03

申请号：US17451675

申请日：2021-10-21

Applicant: AGC Inc.

Inventor： Satoru WATANABE ,  Yoshitake TODA ,  Kunio MASUMO ,  Nao ISHIBASHI ,  Nobuhiro NAKAMURA ,  Shimpei MORITA ,  Hikaru KOBAYASHI

IPC: H01L51/50 ,  H01L51/56 ,  H01L51/00

Abstract: An assembly of nanoparticles includes metal oxide, the nanoparticles including zinc (Zn) and silicon (Si). In addition, the nanoparticles have an atomic ratio of Zn/(Zn+Si) in a range of 0.3 to 0.95. Further, the nanoparticles have an equivalent circular particle diameter in a range of 1 nm to 20 nm.

公开(公告)号：US20230157301A1

公开(公告)日：2023-05-25

申请号：US18157208

申请日：2023-01-20

Applicant: AGC INC.

Inventor： Satoshi KASHIWABARA ,  Takahiro MASHIMO ,  Kumiko SUWA ,  Yoshitake TODA ,  Nobuhiro NAKAMURA ,  Takaaki MURAKAMI

IPC: A01N59/20 ,  A01N59/06 ,  C09D7/61 ,  C09D5/14 ,  D01F1/10

CPC classification number: A01N59/20 ,  A01N59/06 ,  C09D7/61 ,  C09D5/14 ,  D01F1/103

Abstract: The present invention relates to an antiviral material including a Cu-M-O compound, in which the Cu at least includes a monovalent-state Cu and the M is at least one element selected from the group consisting of B, Al, Sc, Ti, Co, Cr, Ni, Ga, Y, Zr, In, Rh, and a lanthanoid.

公开(公告)号：US20230063968A1

公开(公告)日：2023-03-02

申请号：US18045269

申请日：2022-10-10

Applicant: AGC Inc.

Inventor： Yasuo MORIMOTO ,  Nobuhiro NAKAMURA ,  Masanobu ISSHIKI

IPC: H01Q1/38 ,  H01Q1/42

Abstract: A transparent antenna includes a transparent substrate; and a metal thin wire layer on an upper side of the transparent substrate. The transparent substrate has a thickness of 300 μm or less. The metal thin wire layer has an opening ratio of 80% or more. When a metal conductor having a surface resistivity ρ Ω/sq is placed parallel to the transparent antenna 0.15 mm apart, an input reflection coefficient S11(ρ, f) and a radiation efficiency Eff(ρ, f) at a frequency f satisfy relations S11(0.1 Ω/sq, f1 GHz)

公开(公告)号：US20200287051A1

公开(公告)日：2020-09-10

申请号：US16878904

申请日：2020-05-20

Applicant: AGC Inc.

Inventor： Kunio MASUMO ,  Nao ISHIBASHI ,  Nobuhiro NAKAMURA ,  Satoru WATANABE ,  Kazuto OHKOSHI ,  Naomichi MIYAKAWA

IPC: H01L29/786 ,  H01L29/24 ,  H01L29/45 ,  H01L21/02 ,  H01L21/383 ,  H01L21/425 ,  H01L29/66

Abstract: A thin film transistor of a top-gate-coplanar type includes a source, a drain, a gate, and a semiconductor layer, wherein the semiconductor layer has a first low-resistance region for the source and a second low-resistance region for the drain, wherein the source and the drain are electrically connected through the first low-resistance region, the semiconductor layer, and the second low-resistance region, and wherein the semiconductor layer is formed of an oxide-based semiconductor containing gallium (Ga), zinc (Zn), and tin (Sn).

公开(公告)号：US20190058142A1

公开(公告)日：2019-02-21

申请号：US16169078

申请日：2018-10-24

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY ,  TOKYO INSTITUTE OF TECHNOLOGY ,  AGC Inc.

Inventor： Hideo HOSONO ,  Yoshitake TODA ,  Satoru WATANABE ,  Toshinari WATANABE ,  Kazuhiro ITO ,  Naomichi MIYAKAWA ,  Nobuhiro NAKAMURA

IPC: H01L51/42 ,  H01L31/032 ,  C23C14/08 ,  C23C14/34 ,  C23C14/35 ,  H01J37/34 ,  H01L51/50 ,  H01L31/0256

Abstract: A thin film of metal oxide includes zinc (Zn); tin (Sn); silicon (Si); and oxygen (O). In terms of oxide, based on 100 mol % of total of oxides of the thin film, SnO2 is greater than 15 mol % but less than or equal to 95 mol %.