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公开(公告)号：US20240280890A1
公开(公告)日：2024-08-22
申请号：US18648522
申请日：2024-04-29
Applicant: AGC Inc.
Inventor： Takuma KATO , Daijiro AKAGI , Takeshi OKATO , Ryusuke OISHI , Yusuke ONO
Abstract: A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; a protection film that protects the multilayer reflective film; and an absorption film that absorbs the EUV light, in this order. The protection film contains 50 at % or more of Rh. When a band-shaped gray scale image parallel to an interface between the protection film and the multilayer reflective film is obtained by imaging a cross section of the protection film with a transmission electron microscope (TEM) and a luminance profile of the gray scale image in a longitudinal direction of the gray scale image is created, a number of peaks of the luminance profile per 100 nm in the longitudinal direction of the gray scale image is 50 or more.
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Patent Agency Ranking
公开(公告)号：US20240176224A1
公开(公告)日：2024-05-30
申请号：US18394787
申请日：2023-12-22
Applicant: AGC Inc.
Inventor： Daijiro AKAGI , Shunya TAKI , Takuma KATO , Ichiro ISHIKAWA , Kenichi SASAKI
Abstract: A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; a protection film that protects the multilayer reflective film; and a phase shift film that shifts a phase of the EUV light, the substrate, the multilayer reflective film, the protection film, and the phase shift film being arranged in this order.
The phase shift film contains at least one first element X1 selected from the first group consisting of ruthenium (Ru), iridium (Ir), platinum (Pt), palladium (Pd), and gold (Au), and at least one second element X2 selected from the second group consisting of oxygen (O), boron (B), carbon (C), and nitrogen (N). In the phase shift film, a chemical shift of a peak of 3d5/2 or a peak of 4f7/2 of the first element X1 observed by X-ray electron spectroscopy is less than 0.3 eV.-
公开(公告)号：US20240241433A1
公开(公告)日：2024-07-18
申请号：US18621502
申请日：2024-03-29
Applicant: AGC Inc.
Inventor： Daijiro AKAGI , Takuma KATO , Keishi TSUKIYAMA , Toshiyuki UNO , Hiroshi HANEKAWA , Ryusuke OISHI , Sadatatsu IKEDA , Yukihiro IWATA , Chikako HANZAWA
Abstract: A reflective mask blank includes a substrate, a multilayered reflection film configured to reflect EUV rays, a protection film configured to protect the multilayered reflection film, and an absorption film configured to absorb the EUV rays in this order. The protection film contains Rh as a main component. The multilayered reflection film includes an uppermost layer that is closest to the protection film in the multilayered reflection film and contains Si and N. In the uppermost layer, an element ratio (N/Si) of N to Si is greater than 0.00 and less than 1.50, and an element ratio (O/Si) of O to Si is 0.00 or greater and less than 0.44.
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公开(公告)号：US20240045320A1
公开(公告)日：2024-02-08
申请号：US18382356
申请日：2023-10-20
Applicant: AGC Inc.
Inventor： Takuma KATO , Daijiro AKAGI , Takeshi OKATO , Ryusuke OISHI , Yusuke ONO
Abstract: A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; a protection film that protects the multilayer reflective film; and an absorption film that absorbs the EUV light, in this order. The protection film contains 50 at % or more of Rh. When a band-shaped gray scale image parallel to an interface between the protection film and the multilayer reflective film is obtained by imaging a cross section of the protection film with a transmission electron microscope (TEM) and a luminance profile of the gray scale image in a longitudinal direction of the gray scale image is created, a number of peaks of the luminance profile per 100 nm in the longitudinal direction of the gray scale image is 50 or more.
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公开(公告)号：US20250004360A1
公开(公告)日：2025-01-02
申请号：US18884196
申请日：2024-09-13
Applicant: AGC Inc.
Inventor： Daijiro AKAGI , Takuma KATO , Keishi TSUKIYAMA , Toshiyuki UNO , Hiroshi HANEKAWA , Ryusuke OISHI , Sadatatsu IKEDA , Yukihiro IWATA , Chikako HANZAWA
Abstract: A reflective mask blank includes a substrate, a multilayered reflection film configured to reflect EUV rays, a protection film configured to protect the multilayered reflection film, and an absorption film configured to absorb the EUV rays in this order. The protection film contains Rh as a main component. The multilayered reflection film includes an uppermost layer that is closest to the protection film in the multilayered reflection film and contains Si and N. In the uppermost layer, an element ratio (N/Si) of N to Si is greater than 0.00 and less than 1.50, and an element ratio (O/Si) of O to Si is 0.00 or greater and less than 0.44.
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公开(公告)号：US20230350285A1
公开(公告)日：2023-11-02
申请号：US18346563
申请日：2023-07-03
Applicant: AGC Inc.
Inventor： Daijiro AKAGI , Shunya TAKI , Takuma KATO , Ichiro ISHIKAWA , Kenichi SASAKI
Abstract: A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; a protection film that protects the multilayer reflective film; and a phase shift film that shifts a phase of the EUV light, the substrate, the multilayer reflective film, the protection film, and the phase shift film being arranged in this order. The phase shift film contains at least one first element X1 selected from the first group consisting of ruthenium (Ru), iridium (Ir), platinum (Pt), palladium (Pd), and gold (Au), and at least one second element X2 selected from the second group consisting of oxygen (O), boron (B), carbon (C), and nitrogen (N). In the phase shift film, a chemical shift of a peak of 3d5/2 or a peak of 4f7/2 of the first element X1 observed by X-ray electron spectroscopy is less than 0.3 eV.
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