公开(公告)号：US20250038016A1

公开(公告)日：2025-01-30

申请号：US18707165

申请日：2022-09-28

Applicant: AP SYSTEMS INC.

Inventor： Dae Ryong LEE ,  Sang Hyun JI ,  Chang Kyo KIM

IPC: H01L21/67 ,  H01L21/268 ,  H01L21/66

Abstract: The present inventive concept relates to a substrate processing apparatus and a substrate processing method, which can accurately measure temperature in even a low-temperature region, thus making it possible to efficiently manage heat. The substrate processing apparatus comprises: a chamber for providing a processing space in which a substrate is processed; a substrate support provided in the processing space of the chamber in order to support the substrate; a heater provided with a plurality of semiconductor laser modules that emit light toward a first surface of the substrate; and a pyrometer which is provided on the side of a second surface of the substrate facing the first surface and detects light emitted from the substrate to measure the temperature of the substrate. The main light-emitting wavelength of the plurality of semiconductor laser modules may be shorter than the measurement wavelength of the pyrometer.

公开(公告)号：US20210082737A1

公开(公告)日：2021-03-18

申请号：US16989864

申请日：2020-08-10

Applicant: AP SYSTEMS INC.

Inventor： Chang Kyo KIM ,  Chang Min KWON

IPC: H01L21/687 ,  H01L21/67 ,  C23C16/458

Abstract: Provided are an edge ring and a heat treatment apparatus having the same. The edge ring includes a main body having a ring shape. The main body includes a substrate support part configured to support an edge of a bottom surface of a substrate, an outer band provided outside the substrate support part and having a top surface that is higher than a top surface of the substrate support part and is parallel to a top surface of the substrate supported by the substrate support part, an outer sidewall provided outside the outer band, and a groove part provided between the substrate support part and the outer band.

公开(公告)号：US20180258534A1

公开(公告)日：2018-09-13

申请号：US15870756

申请日：2018-01-12

Applicant: AP SYSTEMS INC.

Inventor： Sang Hyun JI ,  Chang Kyo KIM

IPC: C23C16/52 ,  C23C16/455

CPC classification number: C23C16/52 ,  C23C16/402 ,  C23C16/45574

Abstract: A gas spraying apparatus according to the embodiment of the present invention includes a spray part disposed and aligned on one side outside a substrate in the width direction of the substrate, and having a plurality of nozzles for spraying gas toward the substrate, and a spray control unit for automatically controlling whether or not each of a plurality of nozzles sprays gas such that a gas density distribution type in the width direction of the substrate becomes a targeted gas density distribution type by the gas sprayed through the plurality of nozzles. Therefore, according to the embodiment of the present invention, it is easy to carry out the process with a plurality of types of process types or a plurality of types of gas density distribution types, and a time for adjusting the open or close operation of the plurality of nozzles can be shortened.

公开(公告)号：US20230366092A1

公开(公告)日：2023-11-16

申请号：US18029898

申请日：2021-09-16

Applicant: AP SYSTEMS INC.

Inventor： Pil Seong JEONG ,  Sang Hyun JI ,  Chang Kyo KIM ,  Dong Sik KIM

IPC: C23C16/50 ,  C23C16/52 ,  C23C16/455

CPC classification number: C23C16/50 ,  C23C16/52 ,  C23C16/45559

Abstract: Provided are an apparatus and method for forming a thin film. The apparatus for forming a thin film include a chamber configured to define a substrate processing space therein, a substrate support part connected to the chamber to support a substrate inside the chamber, a heat source part connected to the chamber to face the substrate support part, and a plasma generation part connected to the chamber to supply radicals between the substrate support part and the heat source part at at least two points.