Touch screen with perimeter touch electrodes

    公开(公告)号:US11995263B1

    公开(公告)日:2024-05-28

    申请号:US17033236

    申请日:2020-09-25

    Applicant: Apple Inc.

    Abstract: A touch screen may be formed from a display and perimeter touch electrodes. Touches detected at one or more of the perimeter touch electrodes can be imputed to touch on a region of the display of the touch screen adjacent to the perimeter touch electrodes. In some examples, the perimeter touch electrodes comprise segmented frit metal arranged around the perimeter of the display (e.g., frit metal used to encapsulate the display). In some examples, the perimeter touch electrodes can be coupled to one or more touch sensing circuits via switching circuitry. In some examples, the switching circuitry can be operated based on control signals shared with the display circuitry.

    RC tuning of touch electrode connections on a touch sensor panel

    公开(公告)号:US10955947B2

    公开(公告)日:2021-03-23

    申请号:US15493791

    申请日:2017-04-21

    Applicant: Apple Inc.

    Abstract: A touch sensor panel comprising a first touch node electrode of a plurality of touch node electrodes, the first touch node electrode coupled to a first sense connection comprising a first set of traces, the first sense connection configured to have a first resistance per unit length that varies along a length of the first sense connection, and a second touch node electrode of the plurality of touch node electrodes, the second touch node electrode coupled to a second sense connection comprising a second set of traces, the second sense connection configured to have a second resistance per unit length that varies along a length of the second sense connection differently than the first resistance per unit length varies along the length of the first sense connection. An effective resistance of the first sense connection and the second sense connection are equal.

    DYNAMIC VCOM COMPENSATION
    5.
    发明申请

    公开(公告)号:US20190228732A1

    公开(公告)日:2019-07-25

    申请号:US16147045

    申请日:2018-09-28

    Applicant: Apple Inc.

    Abstract: A display includes a plurality of pixels grouped into a plurality of lines of pixels. Each line of pixels of the plurality of lines comprises a group of pixels of the plurality of pixels that are coupled to a common scan line as well and that are coupled to different data lines to individually activate each pixel of the group of pixels. The display also includes a common voltage (VCOM) driving circuit configured to receive a waveform and drive the waveform to the display as a VCOM having a value tailored to an individually activated pixel of the group of pixels.

    Gate insulator loss free etch-stop oxide thin film transistor
    9.
    发明授权
    Gate insulator loss free etch-stop oxide thin film transistor 有权
    栅极绝缘体无损蚀刻 - 停止氧化物薄膜晶体管

    公开(公告)号:US08987049B2

    公开(公告)日:2015-03-24

    申请号:US14474433

    申请日:2014-09-02

    Applicant: Apple Inc.

    Abstract: A method is provided for fabricating a thin-film transistor (TFT). The method includes forming a semiconductor layer over a gate insulator that covers a gate electrode, and depositing an insulator layer over the semiconductor layer, as well as etching the insulator layer to form a patterned etch-stop without losing the gate insulator. The method also includes forming a source electrode and a drain electrode over the semiconductor layer and the patterned etch-stop. The method further includes removing a portion of the semiconductor layer beyond the source electrode and the drain electrode such that a remaining portion of the semiconductor layer covers the gate insulator in a first overlapping area of the source electrode and the gate electrode and a second overlapping area of the drain electrode and gate electrode.

    Abstract translation: 提供了制造薄膜晶体管(TFT)的方法。 该方法包括在覆盖栅电极的栅极绝缘体上形成半导体层,以及在半导体层上沉积绝缘体层,以及蚀刻绝缘体层以形成图案化蚀刻停止件,而不会失去栅极绝缘体。 该方法还包括在半导体层和图案化蚀刻停止物上形成源电极和漏电极。 该方法还包括:除了源电极和漏电极之外的半导体层的一部分,使得半导体层的剩余部分在源电极和栅电极的第一重叠区域和第二重叠区域中覆盖栅极绝缘体 的漏电极和栅电极。

    Gate Insulator Loss Free Etch-Stop Oxide Thin Film Transistor
    10.
    发明申请
    Gate Insulator Loss Free Etch-Stop Oxide Thin Film Transistor 有权
    栅极绝缘体无损蚀刻刻蚀氧化物薄膜晶体管

    公开(公告)号:US20140042427A1

    公开(公告)日:2014-02-13

    申请号:US13629537

    申请日:2012-09-27

    Applicant: APPLE INC.

    Abstract: A method is provided for fabricating a thin-film transistor (TFT). The method includes forming a semiconductor layer over a gate insulator that covers a gate electrode, and depositing an insulator layer over the semiconductor layer, as well as etching the insulator layer to form a patterned etch-stop without losing the gate insulator. The method also includes forming a source electrode and a drain electrode over the semiconductor layer and the patterned etch-stop. The method further includes removing a portion of the semiconductor layer beyond the source electrode and the drain electrode such that a remaining portion of the semiconductor layer covers the gate insulator in a first overlapping area of the source electrode and the gate electrode and a second overlapping area of the drain electrode and gate electrode.

    Abstract translation: 提供了制造薄膜晶体管(TFT)的方法。 该方法包括在覆盖栅电极的栅极绝缘体上形成半导体层,以及在半导体层上沉积绝缘体层,以及蚀刻绝缘体层以形成图案化蚀刻停止件,而不会失去栅极绝缘体。 该方法还包括在半导体层和图案化蚀刻停止物上形成源电极和漏电极。 该方法还包括:除了源电极和漏电极之外的半导体层的一部分,使得半导体层的剩余部分在源电极和栅电极的第一重叠区域和第二重叠区域中覆盖栅极绝缘体 的漏电极和栅电极。

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