公开(公告)号：US20150170954A1

公开(公告)日：2015-06-18

申请号：US14554945

申请日：2014-11-26

Applicant: APPLIED MATERIALS, INC.

Inventor： PULKIT AGARWAL ,  SONG-MOON SUH ,  GLEN MORI ,  STEVEN V. SANSONI

IPC: H01L21/687 ,  B25J11/00 ,  B25J15/00

CPC classification number: H01L21/68757 ,  B25J11/0095 ,  B25J15/0014 ,  H01L21/68707 ,  H01L21/6875

Abstract: Embodiments of apparatus for supporting a substrate are disclosed herein. In some embodiments, an apparatus for supporting a substrate includes: a support surface; and a plurality of substrate contact elements protruding from the support surface, wherein the plurality of substrate contact elements are formed of a material having a hardness less than or equal to a hardness of silicon, having a low adhesion, having a coefficient of static friction large enough to prevent sliding, having a surface roughness less than or equal to 10 Ra, and that is electrically conductive.

Abstract translation: 本文公开了用于支撑衬底的装置的实施例。 在一些实施例中，用于支撑衬底的装置包括：支撑表面; 以及从所述支撑面突出的多个基板接触元件，其中，所述多个基板接触元件由硬度小于或等于硅的硬度的材料形成，具有低粘附性，具有较大的静摩擦系数 足以防止具有小于或等于10Ra的表面粗糙度并且是导电的滑动。

公开(公告)号：US20170148670A1

公开(公告)日：2017-05-25

申请号：US15358690

申请日：2016-11-22

Applicant: APPLIED MATERIALS, INC.

Inventor： YU LEI ,  VIKASH BANTHIA ,  KAI WU ,  XINYU FU ,  YI XU ,  KAZUYA DAITO ,  FEIYUE MA ,  PULKIT AGARWAL ,  CHI-CHOU LIN ,  DIEN-YEH WU ,  GUOQIANG JIAN ,  WEI V. TANG ,  JONATHAN BAKKE ,  MEI CHANG ,  SUNDAR RAMAMURTHY

IPC: H01L21/768 ,  C23C16/52 ,  C23C16/455 ,  C23C16/46 ,  H01L21/311 ,  C23C16/44

CPC classification number: H01L21/76843 ,  C23C16/0227 ,  C23C16/0281 ,  C23C16/045 ,  C23C16/06 ,  C23C16/08 ,  C23C16/4401 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/46 ,  C23C16/505 ,  C23C16/52 ,  C23C16/54 ,  H01L21/31116 ,  H01L21/76802 ,  H01L21/76877

Abstract: Methods for forming metal contacts having tungsten liner layers are provided herein. In some embodiments, a method of processing a substrate includes: exposing a substrate, within a first substrate process chamber, to a plasma formed from a first gas comprising a metal organic tungsten precursor gas or a fluorine-free tungsten halide precursor to deposit a tungsten liner layer, wherein the tungsten liner layer is deposited atop a dielectric layer and within a feature formed in a first surface of the dielectric layer of a substrate; transferring the substrate to a second substrate process chamber without exposing the substrate to atmosphere; and exposing the substrate to a second gas comprising a tungsten fluoride precursor to deposit a tungsten fill layer atop the tungsten liner layer.

公开(公告)号：US20160005638A1

公开(公告)日：2016-01-07

申请号：US14476224

申请日：2014-09-03

Applicant: APPLIED MATERIALS, INC.

Inventor： PULKIT AGARWAL ,  DANIEL GREENBERG ,  SONG-MOON SUH ,  JEFFREY BRODINE ,  STEVEN V. SANSONI ,  GLEN MORI

IPC: H01L21/687 ,  H01L21/677

CPC classification number: H01L21/68707 ,  H01L21/67766

Abstract: Embodiments of apparatus for supporting a substrate are disclosed herein. In some embodiments, an apparatus for supporting a substrate includes a support member; and a plurality of substrate contact elements protruding from the support member, wherein each of the plurality of substrate contact elements includes: a first contact surface to support a substrate when placed thereon; and a second contact surface extending from the first contact surface, wherein the second contact surface is adjacent a periphery of the substrate to prevent radial movement of the substrate, wherein the first contact surface is at a first angle with respect to the support member and the second contact surface is at a second angle with respect to the support member, and wherein the first angle is between about 3 degrees and 5 degrees.

Abstract translation: 本文公开了用于支撑衬底的装置的实施例。 在一些实施例中，用于支撑衬底的装置包括支撑构件; 以及从所述支撑构件突出的多个基板接触元件，其中所述多个基板接触元件中的每一个包括：当放置在其上时支撑基板的第一接触表面; 以及从所述第一接触表面延伸的第二接触表面，其中所述第二接触表面邻近所述衬底的周边以防止所述衬底的径向移动，其中所述第一接触表面相对于所述支撑构件处于第一角度， 第二接触表面相对于支撑构件处于第二角度，并且其中第一角度在约3度和5度之间。