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    Systems and methods for selective metal compound removal
    1.
    发明授权
    Systems and methods for selective metal compound removal 有权

    公开(公告)号：US12300501B2

    公开(公告)日：2025-05-13

    申请号：US17863880

    申请日：2022-07-13

    Applicant: Applied Materials, Inc.

    Inventor： Zhenjiang Cui ,  Anchuan Wang

    IPC: H01L21/3065 ,  C23F1/12

    Abstract: Exemplary etching methods may include flowing a fluorine-containing precursor and a hydrogen-containing precursor into a remote plasma region of a semiconductor processing chamber. The methods may include forming a plasma of the fluorine-containing precursor and the hydrogen-containing precursor to produce plasma effluents. The methods may include flowing the plasma effluents into a substrate processing region housing a substrate. The substrate may include an exposed region of a tantalum or titanium material and an exposed region of a silicon-containing material. The methods may include contacting the substrate with the plasma effluents. The methods may include removing the tantalum or titanium material selectively to the silicon-containing material. The tantalum or titanium material may be removed at a rate of at least 20:1 relative to the silicon-containing material.

    METAL ETCH IN HIGH ASPECT-RATIO FEATURES
    3.
    发明申请
    METAL ETCH IN HIGH ASPECT-RATIO FEATURES 有权

    公开(公告)号：US20220359214A1

    公开(公告)日：2022-11-10

    申请号：US17307636

    申请日：2021-05-04

    Applicant: Applied Materials, Inc.

    Inventor： Baiwei Wang ,  Xiaolin C. Chen ,  Rohan Puligoru Reddy ,  Oliver Jan ,  Zhenjiang Cui ,  Anchuan Wang

    IPC: H01L21/3065 ,  H01L27/1157 ,  H01J37/305

    Abstract: Exemplary methods of etching may include flowing a fluorine-containing precursor and a secondary gas into a processing region of a semiconductor processing chamber. The secondary gas may be or include oxygen or nitrogen. A flow rate ratio of the fluorine-containing precursor to the secondary gas may be greater than or about 1:1. The methods may include contacting a substrate with the fluorine-containing precursor and the secondary gas. The substrate may include an exposed metal. The substrate may define a high aspect-ratio structure. The methods may include etching the exposed metal within the high aspect-ratio structure.

    Metal recess for semiconductor structures
    5.
    发明授权
    Metal recess for semiconductor structures 有权

    公开(公告)号：US10861676B2

    公开(公告)日：2020-12-08

    申请号：US15912404

    申请日：2018-03-05

    Applicant: Applied Materials, Inc.

    Inventor： Zhenjiang Cui ,  Nitin Ingle ,  Feiyue Ma ,  Hanshen Zhang ,  Siliang Chang ,  Daniella Holm

    IPC: H01J37/32 ,  H01L27/10 ,  H01L21/02 ,  H01L27/02 ,  H01L21/285 ,  H01L21/3213 ,  H01L27/11582

    Abstract: Exemplary methods for etching a variety of metal-containing materials may include flowing an oxygen-containing precursor into a semiconductor processing chamber. A substrate positioned within the semiconductor processing chamber may include a trench formed between two vertical columns and a metal-containing material arranged within a plurality of recesses defined by the two vertical columns. The plurality of recesses may include a first recess and a second recess adjacent to the first recess. The metal-containing material arranged within the first recess and the metal-containing material arranged within the second recess may be connected by the metal-containing material lining a portion of sidewalls of the trench. The methods may further include oxidizing the metal-containing material with the oxygen-containing precursor. The methods may also include flowing a halide precursor into the semiconductor processing chamber. The methods may further include laterally etching the oxidized metal-containing material lining the portion of the sidewalls of the trench.

    CHLORINE-BASED HARDMASK REMOVAL
    6.
    发明申请
    CHLORINE-BASED HARDMASK REMOVAL 有权
    基于氯化物的硬质合金去除

    公开(公告)号：US20160086816A1

    公开(公告)日：2016-03-24

    申请号：US14543683

    申请日：2014-11-17

    Applicant: Applied Materials, Inc.

    Inventor： Xikun Wang ,  Mandar Pandit ,  Zhenjiang Cui ,  Mikhail Korolik ,  Anchuan Wang ,  Nitin K. Ingle ,  Jie Liu

    IPC: H01L21/311

    CPC classification number: H01L21/31122 ,  H01J37/32357 ,  H01L21/02063 ,  H01L21/311 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/32136 ,  H01L21/32139

    Abstract: A method of removing titanium nitride hardmask is described. The hardmask resides above a low-k dielectric layer prior to removal and the low-k dielectric layer retains a relatively low net dielectric constant after the removal process. The low-k dielectric layer may be part of a dual damascene structure having copper at the bottom of the vias. A non-porous carbon layer is deposited prior to the titanium nitride hardmask removal to protect the low-k dielectric layer and the copper. The titanium nitride hardmask is removed with a gas-phase etch using plasma effluents formed in a remote plasma from a chlorine-containing precursor. Plasma effluents within the remote plasma are flowed into a substrate processing region where the plasma effluents react with the titanium nitride.

    Abstract translation: 描述了一种去除氮化钛硬掩模的方法。 在去除之前，硬掩模位于低k电介质层之上，并且低k电介质层在去除过程之后保持相对较低的净介电常数。 低k电介质层可以是在通孔底部具有铜的双镶嵌结构的一部分。 在氮化钛硬掩模去除之前沉积无孔碳层以保护低k电介质层和铜。 使用在含氯前体的远程等离子体中形成的等离子体流出物，用气相蚀刻去除氮化钛硬掩模。 远程等离子体内的等离子体流出物流入基板处理区域，其中等离子体流出物与氮化钛反应。

    SYSTEMS AND METHODS FOR NITRIDE-CONTAINING FILM REMOVAL
    8.
    发明申请
    SYSTEMS AND METHODS FOR NITRIDE-CONTAINING FILM REMOVAL 有权

    公开(公告)号：US20220254648A1

    公开(公告)日：2022-08-11

    申请号：US17173329

    申请日：2021-02-11

    Applicant: Applied Materials, Inc.

    Inventor： Baiwei Wang ,  Oliver Jan ,  Rohan Puligoru Reddy ,  Xiaolin Chen ,  Zhenjiang Cui ,  Anchuan Wang

    IPC: H01L21/3213 ,  H01J37/32

    Abstract: Exemplary etching methods may include flowing an oxygen-containing precursor into a remote plasma region of a semiconductor processing chamber while striking a plasma to produce oxygen plasma effluents. The methods may include contacting a substrate housed in a processing region with the oxygen plasma effluents. The substrate may define an exposed region of titanium nitride. The contacting may produce an oxidized surface on the titanium nitride. The methods may include flowing a halogen-containing precursor into a remote plasma region of a semiconductor processing chamber while striking a plasma to produce halogen plasma effluents. The methods may include contacting the oxidized surface on the titanium nitride with the halogen plasma effluents. The methods may include removing the oxidized surface on the titanium nitride.

    SYSTEMS AND METHODS FOR SELECTIVE METAL COMPOUND REMOVAL
    10.
    发明申请
    SYSTEMS AND METHODS FOR SELECTIVE METAL COMPOUND REMOVAL 有权

    公开(公告)号：US20220084832A1

    公开(公告)日：2022-03-17

    申请号：US17018206

    申请日：2020-09-11

    Applicant: Applied Materials, Inc.

    Inventor： Zhenjiang Cui ,  Anchuan Wang

    IPC: H01L21/3065 ,  C23F1/12

    Abstract: Exemplary etching methods may include flowing a fluorine-containing precursor and a hydrogen-containing precursor into a remote plasma region of a semiconductor processing chamber. The hydrogen-containing precursor may be flowed at a flow rate of at least 2:1 relative to the flow rate of the fluorine-containing precursor. The methods may include forming a plasma of the fluorine-containing precursor and the hydrogen-containing precursor to produce plasma effluents. The methods may include flowing the plasma effluents into a substrate processing region housing a substrate. The substrate may include an exposed region of a tantalum or titanium material and an exposed region of a silicon-containing material or a metal. The methods may include contacting the substrate with the plasma effluents. The methods may include removing the tantalum or titanium material selectively to the silicon-containing material or the metal.

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