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公开(公告)号：US20240234483A9
公开(公告)日：2024-07-11
申请号：US18491779
申请日：2023-10-22
申请人： ASM IP Holding B.V.
IPC分类号： H10B12/10
CPC分类号： H01L28/75
摘要： Methods of processing a substrate and related structures and systems. Described methods comprise forming a distal dipole layer on to a distal material layer; forming a high-k dielectric on the distal dipole layer; and, forming a proximal dipole layer on the high-k dielectric.
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2.发明公开公开(公告)号：US20240191347A1
公开(公告)日：2024-06-13
申请号：US18535440
申请日：2023-12-11
申请人： ASM IP Holding B.V.
发明人： Monica Thukkaram , Aditya Chauhan , Andrea Illiberi , Vivek Koladi Mootheri , Leo Lukose , Alessandra Leonhardt , Michael Eugene Givens
IPC分类号： C23C16/40 , C23C16/455
CPC分类号： C23C16/407 , C23C16/403 , C23C16/45527 , C23C16/45553
摘要： Methods and related solids and systems are described. In some embodiments, methods as described herein can comprise executing a plurality of super cycles. Ones from the plurality of super cycles can comprise a magnesium sub cycle, an aluminum sub cycle, and a zinc sub cycle. At least one super cycle can comprise more than one magnesium sub cycle, aluminum sub cycle, or zinc sub cycle. Thus, layers having a tunable magnesium, aluminum, or zinc composition can be formed.
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公开(公告)号：US20240339493A1
公开(公告)日：2024-10-10
申请号：US18624808
申请日：2024-04-02
申请人： ASM IP Holding B.V.
发明人： Alessandra Leonhardt , Varun Sharma , Vivek Koladi Mootheri , Leo Lukose , Andrea Illiberi , Jerome Innocent , Aditya Chauhan
IPC分类号： H01L29/06 , H01L21/02 , H01L29/778
CPC分类号： H01L29/0607 , H01L21/02362 , H01L28/75 , H01L29/7786
摘要： Structures and related methods and systems for forming structures. The structures comprise a proximal contact, a distal contact, a high-k dielectric, and at least one of a proximal barrier and a distal barrier. In some embodiments, at least one of the proximal barrier and the distal barrier is constructed and arranged to inhibit Poole-Frenkel emission from the high-k dielectric when a first electric field is applied between the proximal contact and a distal contact in a first electric field direction.
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4.发明申请公开(公告)号：US20230006031A1
公开(公告)日：2023-01-05
申请号：US17850087
申请日：2022-06-27
申请人： ASM IP Holding B.V.
IPC分类号： H01L49/02 , H01L21/285 , H01L21/02
摘要： A noble metal liner and a metal-insulator-metal (MIM) capacitor (MIMCAP) are described along with the methods of manufacture or fabrication. The MIM capacitor includes a liner formed of a thin layer or film of a noble metal, which is only a few nanometers thick, e.g., a thickness in the range of about 0.5 nm to about 5 nm or more. In a finished device such as a MIM capacitor, the noble metal liner is sandwiched between a thicker electrode and the insulator, e.g., a layer or thin film of high or ultra high-k material, thereby providing a cap for the electrode to limit leakage currents in the device.
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公开(公告)号：US20240136392A1
公开(公告)日：2024-04-25
申请号：US18491779
申请日：2023-10-21
申请人： ASM IP Holding B.V.
IPC分类号： H10B12/10
CPC分类号： H01L28/75
摘要： Methods of processing a substrate and related structures and systems. Described methods comprise forming a distal dipole layer on to a distal material layer; forming a high-k dielectric on the distal dipole layer; and, forming a proximal dipole layer on the high-k dielectric.
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公开(公告)号：US20230377877A1
公开(公告)日：2023-11-23
申请号：US18319933
申请日：2023-05-18
申请人： ASM IP Holding, B.V.
发明人： Alessandra Leonhardt , Matthew Surman , Perttu Sippola , Ranjith Karuparambil Ramachandran , Charles Dezelah , Michael Givens , Andrea Illiberi , Tatiana Ivanova , Leo Lukose , Lorenzo Bottiglieri , Suvidyakumar Vinod Homkar , Vivek Koladi Mootheri
IPC分类号： H01L21/02 , C23C16/40 , C23C16/56 , C23C16/455
CPC分类号： H01L21/0228 , H01L21/02181 , H01L21/02189 , H01L21/02194 , H01L21/02318 , C23C16/405 , C23C16/56 , C23C16/45527 , C23C16/45553 , H01L29/0673
摘要： Methods and related systems of processing a substrate. Described methods comprise executing a plurality of deposition cycles to form a doped hafnium zirconium oxide layer on the substrate.
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