公开(公告)号：US20210118671A1

公开(公告)日：2021-04-22

申请号：US17072524

申请日：2020-10-16

申请人： ASM IP Holding B.V.

发明人： Oreste Madia ,  Andrea Illiberi ,  Giuseppe Alessio Verni ,  Tatiana Ivanova ,  Perttu Sippola ,  Michael Eugene Givens

IPC分类号： H01L21/02 ,  C23C16/455 ,  C23C16/40

摘要： Methods of forming indium germanium zinc oxide (IGeZO) films by vapor deposition are provided. The IGeZO films may, for example, serve as a channel layer in a transistor device. In some embodiments atomic layer deposition processes for depositing IGeZO films comprise an IGeZO deposition cycle comprising alternately and sequentially contacting a substrate in a reaction space with a vapor phase indium precursor, a vapor phase germanium precursor, a vapor phase zinc precursor and an oxygen reactant. In some embodiments the ALD deposition cycle additionally comprises contacting the substrate with an additional reactant comprising one or more of NH3, N2O, NO2 and H2O2.

公开(公告)号：US20210111025A1

公开(公告)日：2021-04-15

申请号：US17065925

申请日：2020-10-08

申请人： ASM IP Holding B.V.

发明人： Ivan Zyulkov ,  David Kurt de Roest ,  Yoann Tomczak ,  Michael Eugene Givens ,  Perttu Sippola ,  Tatiana Ivanova ,  Zecheng Liu ,  Bokheon Kim ,  Daniele Piumi

IPC分类号： H01L21/033 ,  H01L21/027

摘要： Methods of forming structures including a photoresist underlayer and structures including the photoresist underlayer are disclosed. Exemplary methods include forming the photoresist underlayer that includes metal. Techniques for treating a surface of the photoresist underlayer and/or depositing an additional layer overlying the photoresist underlayer are also disclosed.

公开(公告)号：US20200266055A1

公开(公告)日：2020-08-20

申请号：US16790780

申请日：2020-02-14

申请人： ASM IP Holding B.V.

发明人： Tatiana Ivanova ,  Perttu Sippola ,  Michael Eugene Givens

IPC分类号： H01L21/02 ,  H01L21/28 ,  H01L29/51

摘要： A method for depositing a hafnium lanthanum oxide film on a substrate by a cyclical deposition in a reaction chamber is disclosed. The method may include: depositing a hafnium oxide film on the substrate utilizing a first sub-cycle of the cyclical deposition process and depositing a lanthanum oxide film utilizing a second sub-cycle of the cyclical deposition process.

公开(公告)号：US20230377877A1

公开(公告)日：2023-11-23

申请号：US18319933

申请日：2023-05-18

申请人： ASM IP Holding, B.V.

发明人： Alessandra Leonhardt ,  Matthew Surman ,  Perttu Sippola ,  Ranjith Karuparambil Ramachandran ,  Charles Dezelah ,  Michael Givens ,  Andrea Illiberi ,  Tatiana Ivanova ,  Leo Lukose ,  Lorenzo Bottiglieri ,  Suvidyakumar Vinod Homkar ,  Vivek Koladi Mootheri

IPC分类号： H01L21/02 ,  C23C16/40 ,  C23C16/56 ,  C23C16/455

CPC分类号： H01L21/0228 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/02194 ,  H01L21/02318 ,  C23C16/405 ,  C23C16/56 ,  C23C16/45527 ,  C23C16/45553 ,  H01L29/0673

摘要： Methods and related systems of processing a substrate. Described methods comprise executing a plurality of deposition cycles to form a doped hafnium zirconium oxide layer on the substrate.

公开(公告)号：US11735422B2

公开(公告)日：2023-08-22

申请号：US17065925

申请日：2020-10-08

申请人： ASM IP Holding B.V.

发明人： Ivan Zyulkov ,  David Kurt de Roest ,  Yoann Tomczak ,  Michael Eugene Givens ,  Perttu Sippola ,  Tatiana Ivanova ,  Zecheng Liu ,  Bokheon Kim ,  Daniele Piumi

IPC分类号： H01L21/033 ,  H01L21/027 ,  H01L21/02 ,  H01L21/3105

CPC分类号： H01L21/0337 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/0273 ,  H01L21/02172 ,  H01L21/02186 ,  H01L21/02205 ,  H01L21/02274 ,  H01L21/0332 ,  H01L21/3105

摘要： Methods of forming structures including a photoresist underlayer and structures including the photoresist underlayer are disclosed. Exemplary methods include forming the photoresist underlayer that includes metal. Techniques for treating a surface of the photoresist underlayer and/or depositing an additional layer overlying the photoresist underlayer are also disclosed.

公开(公告)号：US20230357924A1

公开(公告)日：2023-11-09

申请号：US18141125

申请日：2023-04-28

申请人： ASM IP Holding B.V.

发明人： Eric James Shero ,  Charles Dezelah ,  Ren-Jie Chang ,  Qi Xie ,  Perttu Sippola ,  Petri Raisanen

IPC分类号： C23C16/40 ,  C23C16/04 ,  C23C16/44 ,  C23C16/455 ,  H01L21/02 ,  H01L21/768

CPC分类号： C23C16/405 ,  C23C16/045 ,  C23C16/4408 ,  C23C16/45553 ,  H01L21/02175 ,  H01L21/02205 ,  H01L21/0228 ,  H01L21/76831

摘要： Vapor deposition methods and related systems are provided for depositing layers comprising vanadium and oxygen. In some embodiments, the methods comprise contacting a substrate in a reaction space with alternating pulses of a vapor-phase vanadium precursor and a vapor-phase oxygen reactant. The reaction space may be purged, for example, with an inert gas, between reactant pulses. The methods may be used to fill a gap on a substrate surface. Reaction conditions, including deposition temperature and reactant pulse and purge times may be selected to achieve advantageous gap fill properties. In some embodiments, the substrate on which deposition takes place is maintained at a relatively low temperature, for example between about 50° C. and about 185° C.

公开(公告)号：US20220165575A1

公开(公告)日：2022-05-26

申请号：US17529562

申请日：2021-11-18

申请人： ASM IP Holding B.V.

发明人： Qi Xie ,  Giuseppe Alessio Verni ,  Tatiana Ivanova ,  Perttu Sippola ,  Michael Eugene Givens ,  Eric Shero ,  Jiyeon Kim ,  Charles Dezelah ,  Petro Deminskyi ,  Ren-Jie Chang

IPC分类号： H01L21/28 ,  H01L21/02 ,  C23C16/52 ,  C23C16/455

摘要： Methods and systems for depositing threshold voltage shifting layers onto a surface of a substrate and structures and devices formed using the methods are disclosed. An exemplary method includes using a cyclical deposition process, depositing a threshold voltage shifting layer onto a surface of the substrate.

公开(公告)号：US20230420256A1

公开(公告)日：2023-12-28

申请号：US18236051

申请日：2023-08-21

申请人： ASM IP Holding B.V.

发明人： Ivan Zyulkov ,  David Kurt de Roest ,  Yoann Tomczak ,  Michael Eugene Givens ,  Perttu Sippola ,  Tatiana Ivanova ,  Zecheng Liu ,  Bokheon Kim ,  Daniele Piumi

IPC分类号： H01L21/033 ,  H01L21/027 ,  H01L21/02 ,  H01L21/3105

CPC分类号： H01L21/0337 ,  H01L21/0332 ,  H01L21/0273 ,  H01L21/02186 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/3105 ,  H01L21/0228 ,  H01L21/02172 ,  H01L21/02205

摘要： Methods of forming structures including a photoresist underlayer and structures including the photoresist underlayer are disclosed. Exemplary methods include forming the photoresist underlayer that includes metal. Techniques for treating a surface of the photoresist underlayer and/or depositing an additional layer overlying the photoresist underlayer are also disclosed.

公开(公告)号：US11769664B2

公开(公告)日：2023-09-26

申请号：US17577073

申请日：2022-01-17

申请人： ASM IP Holding B.V.

发明人： Tatiana Ivanova ,  Perttu Sippola ,  Michael Eugene Givens

IPC分类号： H01L21/02 ,  H01L29/51 ,  H01L21/28

CPC分类号： H01L21/02194 ,  H01L21/0228 ,  H01L21/02181 ,  H01L21/02192 ,  H01L21/02205 ,  H01L21/02356 ,  H01L21/28185 ,  H01L21/28194 ,  H01L29/517

摘要： A method for depositing a hafnium lanthanum oxide film on a substrate by a cyclical deposition in a reaction chamber is disclosed. The method may include: depositing a hafnium oxide film on the substrate utilizing a first sub-cycle of the cyclical deposition process and depositing a lanthanum oxide film utilizing a second sub-cycle of the cyclical deposition process.

公开(公告)号：US20220139702A1

公开(公告)日：2022-05-05

申请号：US17577073

申请日：2022-01-17

申请人： ASM IP Holding B.V.

发明人： Tatiana Ivanova ,  Perttu Sippola ,  Michael Eugene Givens

IPC分类号： H01L21/02 ,  H01L29/51 ,  H01L21/28

摘要： A method for depositing a hafnium lanthanum oxide film on a substrate by a cyclical deposition in a reaction chamber is disclosed. The method may include: depositing a hafnium oxide film on the substrate utilizing a first sub-cycle of the cyclical deposition process and depositing a lanthanum oxide film utilizing a second sub-cycle of the cyclical deposition process.