公开(公告)号：US20250092566A1

公开(公告)日：2025-03-20

申请号：US18966261

申请日：2024-12-03

Applicant: ASM IP Holding B.V.

Inventor： John Tolle ,  Joseph P. Margetis

IPC: C30B25/14 ,  C30B25/08 ,  C30B25/16 ,  C30B25/18 ,  H01L21/67

Abstract: Gas-phase reactor systems and methods suitable for use with precursors that are solid phase at room temperature and pressure are disclosed. The systems and methods as described herein can be used to, for example, form amorphous, polycrystalline, or epitaxial layers (e.g., one or more doped semiconductor layers) on a surface of a substrate.

公开(公告)号：US12252785B2

公开(公告)日：2025-03-18

申请号：US16888423

申请日：2020-05-29

Applicant: ASM IP Holding B.V.

Inventor： Gregory Deye ,  Joseph P. Margetis ,  John Tolle

IPC: C23C16/44 ,  H01L21/02

Abstract: A method of cleaning an epitaxial reaction chamber in-situ is disclosed. The method may include a pre-coating step, a high temperature baking step, and a gas etching step. The method is able to remove residue buildup within the reaction chamber, which may be made of quartz.

公开(公告)号：US11814747B2

公开(公告)日：2023-11-14

申请号：US16849793

申请日：2020-04-15

Applicant: ASM IP Holding B.V.

Inventor： John Tolle ,  Joseph P. Margetis

IPC: C30B31/16 ,  C30B25/14 ,  C30B25/16 ,  C30B25/18 ,  C30B25/08 ,  H01L21/67

CPC classification number: C30B25/14 ,  C30B25/08 ,  C30B25/16 ,  C30B25/18 ,  H01L21/67011

Abstract: Gas-phase reactor systems and methods suitable for use with precursors that are solid phase at room temperature and pressure are disclosed. The systems and methods as described herein can be used to, for example, form amorphous, polycrystalline, or epitaxial layers (e.g., one or more doped semiconductor layers) on a surface of a substrate.

公开(公告)号：US20240011189A1

公开(公告)日：2024-01-11

申请号：US18372803

申请日：2023-09-26

Applicant: ASM IP Holding B.V.

Inventor： John Tolle ,  Joseph P. Margetis

IPC: C30B25/14 ,  C30B25/16 ,  C30B25/18 ,  C30B25/08 ,  H01L21/67

CPC classification number: C30B25/14 ,  C30B25/16 ,  C30B25/18 ,  C30B25/08 ,  H01L21/67011

Abstract: Gas-phase reactor systems and methods suitable for use with precursors that are solid phase at room temperature and pressure are disclosed. The systems and methods as described herein can be used to, for example, form amorphous, polycrystalline, or epitaxial layers (e.g., one or more doped semiconductor layers) on a surface of a substrate.

公开(公告)号：US12195876B2

公开(公告)日：2025-01-14

申请号：US18372803

申请日：2023-09-26

Applicant: ASM IP Holding B.V.

Inventor： John Tolle ,  Joseph P. Margetis

IPC: C30B31/16 ,  C30B25/08 ,  C30B25/14 ,  C30B25/16 ,  C30B25/18 ,  H01L21/67

Abstract: Gas-phase reactor systems and methods suitable for use with precursors that are solid phase at room temperature and pressure are disclosed. The systems and methods as described herein can be used to, for example, form amorphous, polycrystalline, or epitaxial layers (e.g., one or more doped semiconductor layers) on a surface of a substrate.

公开(公告)号：US20200340138A1

公开(公告)日：2020-10-29

申请号：US16849793

申请日：2020-04-15

Applicant: ASM IP Holding B.V.

Inventor： John Tolle ,  Joseph P. Margetis

IPC: C30B25/14 ,  C30B25/08 ,  C30B25/18 ,  C30B25/16

Abstract: Gas-phase reactor systems and methods suitable for use with precursors that are solid phase at room temperature and pressure are disclosed. The systems and methods as described herein can be used to, for example, form amorphous, polycrystalline, or epitaxial layers (e.g., one or more doped semiconductor layers) on a surface of a substrate.