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公开(公告)号：US20240014078A1
公开(公告)日：2024-01-11
申请号：US18230115
申请日：2023-08-03
Applicant: ASML NETHERLANDS B.V.
Inventor： Adriaan Johan VAN LEEST , Anagnostis TSIATMAS , Paul Christiaan HINNEN , Elliott Gerard Mc NAMARA , Alok VERMA , Thomas THEEUWES , Hugo Augustinus Joseph CRAMER
CPC classification number: H01L22/12 , G03F7/70683 , G03F7/70633 , G03F9/7003 , G01N21/9501
Abstract: A method of determining a parameter of a patterning process, the method including: obtaining a detected representation of radiation redirected by a structure having geometric symmetry at a nominal physical configuration, wherein the detected representation of the radiation was obtained by illuminating a substrate with a radiation beam such that a beam spot on the substrate was filled with the structure; and determining, by a hardware computer system, a value of the patterning process parameter based on optical characteristic values from an asymmetric optical characteristic distribution portion of the detected radiation representation with higher weight than another portion of the detected radiation representation, the asymmetric optical characteristic distribution arising from a different physical configuration of the structure than the nominal physical configuration.
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公开(公告)号：US20170255112A1
公开(公告)日：2017-09-07
申请号：US15445612
申请日：2017-02-28
Applicant: ASML NETHERLANDS B.V.
Inventor： Adriaan Johan VAN LEEST , Anagnostis TSIATMAS , Paul Christiaan HINNEN , Elliott Gerard McNAMARA , Alok VERMA , Thomas THEEUWES , Hugo Augustinus Joseph CRAMER , Maria Isabel DE LA FUENTE VALENTIN , Koen VAN WITTEVEEN , Martijn Maria ZAAL , Shu-jin WANG
Abstract: A metrology target includes: a first structure arranged to be created by a first patterning process; and a second structure arranged to be created by a second patterning process, wherein the first structure and/or second structure is not used to create a functional aspect of a device pattern, and wherein the first and second structures together form one or more instances of a unit cell, the unit cell having geometric symmetry at a nominal physical configuration and wherein the unit cell has a feature that causes, at a different physical configuration than the nominal physical configuration due to a relative shift in pattern placement in the first patterning process, the second patterning process and/or another patterning process, an asymmetry in the unit cell.
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公开(公告)号：US20230035073A1
公开(公告)日：2023-02-02
申请号：US17783443
申请日：2020-12-17
Applicant: ASML NETHERLANDS B.V.
Inventor： Wim Tjibbo TEL , Adriaan Johan VAN LEEST
IPC: G03F7/20
Abstract: A method for determining a measurement recipe describing one or more measurement settings for measuring a parameter of interest from a substrate subject to an etch induced parameter error, the etch induced parameter error affecting measurement of the parameter of interest in a recipe dependent manner. The method include obtaining parameter of interest set-up data relating to measurements of at least one set-up substrate on which the parameter of interest has various first induced set values and etch induced parameter set-up data relating to measurements of at least one set-up substrate on which the etch induced parameter has various second induced set values. The recipe is determined so as to minimize the effect of the etch induced parameter on measurement of the parameter of interest.
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公开(公告)号：US20210384086A1
公开(公告)日：2021-12-09
申请号：US17408043
申请日：2021-08-20
Applicant: ASML NETHERLANDS B.V.
Inventor： Adriaan Johan VAN LEEST , Anagnostis TSIATMAS , Paul Christiaan HINNEN , Elliott Gerard MC NAMARA , Alok VERMA , Thomas THEEUWES , Hugo Augustinus Joseph CRAMER
Abstract: A method of determining overlay of a patterning process, the method including: obtaining a detected representation of radiation redirected by one or more physical instances of a unit cell, wherein the unit cell has geometric symmetry at a nominal value of overlay and wherein the detected representation of the radiation was obtained by illuminating a substrate with a radiation beam such that a beam spot on the substrate was filled with the one or more physical instances of the unit cell; and determining, from optical characteristic values from the detected radiation representation, a value of a first overlay for the unit cell separately from a second overlay for the unit cell that is also obtainable from the same optical characteristic values, wherein the first overlay is in a different direction than the second overlay or between a different combination of parts of the unit cell than the second overlay.
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公开(公告)号：US20200073254A1
公开(公告)日：2020-03-05
申请号：US16675674
申请日：2019-11-06
Applicant: ASML Netherlands B.V.
Inventor： Maurits VAN DER SCHAAR , Youping ZHANG , Hendrik Jan Hidde SMILDE , Anagnostis TSIATMAS , Adriaan Johan VAN LEEST , Alok VERMA , Thomas THEEUWES , Hugo Augustinus Joseph CRAMER , Paul Christiaan HINNEN
Abstract: A substrate has first and second target structures formed thereon by a lithographic process. Each target structure has two-dimensional periodic structure formed in a single material layer on a substrate using first and second lithographic steps, wherein, in the first target structure, features defined in the second lithographic step are displaced relative to features defined in the first lithographic step by a first bias amount that is close to one half of a spatial period of the features formed in the first lithographic step, and, in the second target structure, features defined in the second lithographic step are displaced relative to features defined in the first lithographic step by a second bias amount close to one half of said spatial period and different to the first bias amount. An angle-resolved scatter spectrum of the first target structure and an angle-resolved scatter spectrum of the second target structure is obtained, and a measurement of a parameter of a lithographic process is derived from the measurements using asymmetry found in the scatter spectra of the first and second target structures.
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Patent Agency Ranking
公开(公告)号：US20170255737A1
公开(公告)日：2017-09-07
申请号：US15445522
申请日：2017-02-28
Applicant: ASML NETHERLANDS B.V.
Inventor： Adriaan Johan VAN LEEST , Anagnostis Tsiatmas , Paul Christiaan Hinnen , Elliott Gerard McNamara , Alok Verma , Thomas Theeuwes , Hugo Augustinus Joseph Cramer
IPC: G06F17/50 , H01L21/308 , H01L21/66
Abstract: A method of determining a parameter of a patterning process, the method including: obtaining a detected representation of radiation redirected by a structure having geometric symmetry at a nominal physical configuration, wherein the detected representation of the radiation was obtained by illuminating a substrate with a radiation beam such that a beam spot on the substrate was filled with the structure; and determining, by a hardware computer system, a value of the patterning process parameter based on optical characteristic values from an asymmetric optical characteristic distribution portion of the detected radiation representation with higher weight than another portion of the detected radiation representation, the asymmetric optical characteristic distribution arising from a different physical configuration of the structure than the nominal physical configuration.
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7.发明申请公开(公告)号：US20160154319A1
公开(公告)日：2016-06-02
申请号：US14906898
申请日：2014-08-05
Applicant: ASML NETHERLANDS B.V.
Inventor： Seyed Iman MOSSAVAT , Hugo Augustinus Joseph CRAMER , Willem Jan GROOTJANS , Adriaan Johan VAN LEEST
IPC: G03F7/20
CPC classification number: G03F7/705 , G01N21/956 , G01N21/95607 , G03F7/70625 , G03F9/7092
Abstract: Methods and inspection apparatus and computer program products for assessing a quality of reconstruction of a value of a parameter of interest of a structure, which may be applied for example in metrology of microscopic structures. It is important the reconstruction provides a value of a parameter of interest (e.g. a CD) of the structure which is accurate as the reconstructed value is used to monitor and/or control a lithographic process. This is a way of assessing a quality of reconstruction (803) of a value of a parameter of interest of a structure which does not require the use of a scanning electron microscope, by predicting (804) values of the parameter of interest of structures using reconstructed values of parameters of structures, and by comparing (805) the predicted values of the parameter of interest and the reconstructed values of the parameter of interest.
Abstract translation: 用于评估结构的感兴趣参数的值的重建质量的方法和检查装置和计算机程序产品，其可以应用于例如微观结构的计量学。 重要的是，重建提供了结构的关注参数（例如CD）的值，该值是精确的，因为重建值用于监视和/或控制光刻过程。 这是通过预测（804）结构的感兴趣的参数的值来评估不需要使用扫描电子显微镜的结构的感兴趣参数的值的重建质量（803）的方法， 通过比较（805）感兴趣参数的预测值和感兴趣参数的重建值，重建结构参数值。
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公开(公告)号：US20250036033A1
公开(公告)日：2025-01-30
申请号：US18716383
申请日：2022-11-22
Applicant: ASML NETHERLANDS B.V.
Inventor： Emil Peter SCHMITT-WEAVER , Kaustuve BHATTACHARYYA , Dong Young CHEON , Adriaan Johan VAN LEEST
Abstract: A method of compensating for focus deviations on a substrate having a plurality of layers present thereon, the method includes generating a focus prediction map for the substrate. In one approach, the focus prediction map is generated by obtaining key performance indicator data on the substrate using an alignment sensor, determining a correlation between the KPI data and focus offset data for positions on the substrate, and using the correlation and the KPI data, generating a focus prediction map for the substrate. In another approach, the prediction map is generated by obtaining a first layer height map for a first layer, measuring, with a level sensor, a second layer height map for a second layer overlying the first layer, and subtracting the first height map from the second height map to obtain a delta height map for the substrate.
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公开(公告)号：US20210035871A1
公开(公告)日：2021-02-04
申请号：US17072391
申请日：2020-10-16
Applicant: ASML NETHERLANDS B.V.
Inventor： Adriaan Johan VAN LEEST , Anagnostis TSIATMAS , Paul Christiaan HINNEN , Elliott Gerard Mc NAMARA , Alok VERMA , Thomas THEEUWES , Hugo Augustinus Joseph CRAMER , Maria Isabel DE LA FUENTE VALENTIN , Koen VAN WITTEVEEN , Martijn Maria ZAAL , Shu-jin WANG
Abstract: A metrology target includes: a first structure arranged to be created by a first patterning process; and a second structure arranged to be created by a second patterning process, wherein the first structure and/or second structure is not used to create a functional aspect of a device pattern, and wherein the first and second structures together form one or more instances of a unit cell, the unit cell having geometric symmetry at a nominal physical configuration and wherein the unit cell has a feature that causes, at a different physical configuration than the nominal physical configuration due to a relative shift in pattern placement in the first patterning process, the second patterning process and/or another patterning process, an asymmetry in the unit cell.
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公开(公告)号：US20200185281A1
公开(公告)日：2020-06-11
申请号：US16790809
申请日：2020-02-14
Applicant: ASML NETHERLANDS B.V.
Inventor： Adriaan Johan VAN LEEST , Anagnostis TSIATMAS , Paul Christiaan HINNEN , Elliott Gerard MC NAMARA , Alok VERMA , Thomas THEEUWES , Hugo Augustinus Joseph CRAMER
Abstract: A method of configuring a parameter determination process, the method including: obtaining a mathematical model of a structure, the mathematical model configured to predict an optical response when illuminating the structure with a radiation beam and the structure having geometric symmetry at a nominal physical configuration; using, by a hardware computer system, the mathematical model to simulate a perturbation in the physical configuration of the structure of a certain amount to determine a corresponding change of the optical response in each of a plurality of pixels to obtain a plurality of pixel sensitivities; and based on the pixel sensitivities, determining a plurality of weights for combination with measured pixel optical characteristic values of the structure on a substrate to yield a value of a parameter associated with change in the physical configuration, each weight corresponding to a pixel.
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