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公开(公告)号：US11592753B2
公开(公告)日：2023-02-28
申请号：US17715112
申请日：2022-04-07
Applicant: ASML NETHERLANDS B.V.
Inventor： Weitian Kou , Alexander Ypma , Marc Hauptmann , Michiel Kupers , Lydia Marianna Vergaij-Huizer , Erik Johannes Maria Wallerbos , Erik Henri Adriaan Delvigne , Willem Seine Christian Roelofs , Hakki Ergün Cekli , Stefan Cornelis Theodorus Van Der Sanden , Cédric Désiré Grouwstra , David Frans Simon Deckers , Manuel Giollo , Iryna Dovbush
IPC: G03F7/20
Abstract: A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.
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公开(公告)号：US10281825B2
公开(公告)日：2019-05-07
申请号：US16084586
申请日：2017-05-05
Applicant: ASML NETHERLANDS B.V.
Inventor： Michiel Kupers , Wolfgang Helmut Henke
Abstract: A lithographic apparatus applies patterns to substrates, the substrates being processed as a plurality of lots. Each lot of substrates receives a particular layer pattern under layer-specific operating conditions. A thermal model is provided for modeling and compensating one or more characteristics of thermal behavior of components within the lithographic apparatus, in response to the varying layer-specific operating conditions associated with a sequence of lots. The thermal model is also used to simulate thermal behavior of the apparatus when processing a given collection of lots in different possible sequences. Based on comparison of the simulated thermal behavior in different sequences of lots, an optimized sequence is determined. Optionally, lot sequencing rules are determined and used to obtain a preferred thermal behavior when processing a collection of lots in the future.
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公开(公告)号：US11782349B2
公开(公告)日：2023-10-10
申请号：US18100662
申请日：2023-01-24
Applicant: ASML NETHERLANDS B.V.
Inventor： Weitian Kou , Alexander Ypma , Marc Hauptmann , Michiel Kupers , Lydia Marianna Vergaij-Huizer , Erik Johannes Maria Wallerbos , Erik Henri Adriaan Delvigne , Willem Seine Christian Roelofs , Hakki Ergün Cekli , Stefan Cornelis Theodorus Van Der Sanden , Cédric Désiré Grouwstra , David Frans Simon Deckers , Manuel Giollo , Iryna Dovbush
CPC classification number: G03F7/70508 , G03F7/705 , G03F7/70633
Abstract: A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.
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公开(公告)号：US11327407B2
公开(公告)日：2022-05-10
申请号：US17102850
申请日：2020-11-24
Applicant: ASML NETHERLANDS B.V.
Inventor： Weitian Kou , Alexander Ypma , Marc Hauptmann , Michiel Kupers , Lydia Marianna Vergaij-Huizer , Erik Johannes Maria Wallerbos , Erik Henri Adriaan Delvigne , Willem Seine Christian Roelofs , Hakki Ergün Cekli , Stefan Cornelis Theodorus Van Der Sanden , Cédric Désiré Grouwstra , David Frans Simon Deckers , Manuel Giollo , Iryna Dovbush
IPC: G03F7/20
Abstract: A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.
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公开(公告)号：US12044981B2
公开(公告)日：2024-07-23
申请号：US17381817
申请日：2021-07-21
Applicant: ASML NETHERLANDS B.V.
Inventor： Marc Hauptmann , Everhardus Cornelis Mos , Weitian Kou , Alexander Ypma , Michiel Kupers , Hyunwoo Yu , Min-Sub Han
CPC classification number: G03F7/70633 , G03F7/70525 , G03F7/7085 , G03F9/7003
Abstract: A lithographic process is performed on a set of semiconductor substrates consisting of a plurality of substrates. As part of the process, the set of substrates is partitioned into a number of subsets. The partitioning may be based on a set of characteristics associated with a first layer on the substrates. A fingerprint of a performance parameter is then determined for at least one substrate of the set of substrates. Under some circumstances, the fingerprint is determined for one substrate of each subset of substrates. The fingerprint is associated with at least the first layer. A correction for the performance parameter associated with an application of a subsequent layer is then derived, the derivation being based on the determined fingerprint and the partitioning of the set of substrates.
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Patent Agency Ranking
6.发明授权公开(公告)号：US11774862B2
公开(公告)日：2023-10-03
申请号：US17501911
申请日：2021-10-14
Applicant: ASML NETHERLANDS B.V.
Inventor： Hakki Ergün Cekli , Masashi Ishibashi , Wendy Johanna Martina Van De Ven , Willem Seine Christian Roelofs , Elliott Gerard McNamara , Rizvi Rahman , Michiel Kupers , Emil Peter Schmitt-Weaver , Erik Henri Adriaan Delvigne
IPC: G03F7/20 , G03F7/00 , G01N21/956 , G03F9/00 , H01L21/66
CPC classification number: G03F7/70633 , G01N21/956 , G03F9/7046 , H01L22/12 , H01L22/20
Abstract: Measurements are obtained from locations across a substrate before or after performing a lithographic process step. Examples of such measurements include alignment measurements made prior to applying a pattern to the substrate, and measurements of a performance parameter such as overlay, after a pattern has been applied. A set of measurement locations is selected from among all possible measurement locations. At least a subset of the selected measurement locations are selected dynamically, in response to measurements obtained using a preliminary selection of measurement locations. Preliminary measurements of height can be used to select measurement locations for alignment. In another aspect, outlier measurements are detected based on supplementary data such as height measurements or historic data.
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7.发明授权公开(公告)号：US11175591B2
公开(公告)日：2021-11-16
申请号：US16098165
申请日：2017-04-21
Applicant: ASML NETHERLANDS B.V.
Inventor： Hakki Ergün Cekli , Masashi Ishibashi , Wendy Johanna Martina Van De Ven , Willem Seine Christian Roelofs , Elliott Gerard McNamara , Rizvi Rahman , Michiel Kupers , Emil Peter Schmitt-Weaver , Erik Henri Adriaan Delvigne
IPC: G03F7/20 , G01N21/956 , G03F9/00 , H01L21/66
Abstract: Measurements are obtained from locations across a substrate before or after performing a lithographic process step. Examples of such measurements include alignment measurements made prior to applying a pattern to the substrate, and measurements of a performance parameter such as overlay, after a pattern has been applied. A set of measurement locations is selected from among all possible measurement locations. At least a subset of the selected measurement locations are selected dynamically, in response to measurements obtained using a preliminary selection of measurement locations. Preliminary measurements of height can be used to select measurement locations for alignment. In another aspect, outlier measurements are detected based on supplementary data such as height measurements or historic data.
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公开(公告)号：US20210349402A1
公开(公告)日：2021-11-11
申请号：US17381817
申请日：2021-07-21
Applicant: ASML NETHERLANDS B.V.
Inventor： Marc HAUPTMANN , Everhardus Cornelis Mos , Weitian Kou , Alexander Ypma , Michiel Kupers , Hyunwoo Yu , Min-Sub Han
Abstract: A lithographic process is performed on a set of semiconductor substrates consisting of a plurality of substrates. As part of the process, the set of substrates is partitioned into a number of subsets. The partitioning may be based on a set of characteristics associated with a first layer on the substrates. A fingerprint of a performance parameter is then determined for at least one substrate of the set of substrates. Under some circumstances, the fingerprint is determined for one substrate of each subset of substrates. The fingerprint is associated with at least the first layer. A correction for the performance parameter associated with an application of a subsequent layer is then derived, the derivation being based on the determined fingerprint and the partitioning of the set of substrates.
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公开(公告)号：US11099487B2
公开(公告)日：2021-08-24
申请号：US16495416
申请日：2018-03-28
Applicant: ASML NETHERLANDS B.V.
Inventor： Marc Hauptmann , Everhardus Cornelis Mos , Weitian Kou , Alexander Ypma , Michiel Kupers , Hyunwoo Yu , Min-Sub Han
Abstract: A lithographic process is performed on a set of semiconductor substrates consisting of a plurality of substrates. As part of the process, the set of substrates is partitioned into a number of subsets. The partitioning may be based on a set of characteristics associated with a first layer on the substrates. A fingerprint of a performance parameter is then determined for at least one substrate of the set of substrates. Under some circumstances, the fingerprint is determined for one substrate of each subset of substrates. The fingerprint is associated with at least the first layer. A correction for the performance parameter associated with an application of a subsequent layer is then derived, the derivation being based on the determined fingerprint and the partitioning of the set of substrates.
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公开(公告)号：US10908512B2
公开(公告)日：2021-02-02
申请号：US16061257
申请日：2016-12-09
Applicant: ASML NETHERLANDS B.V.
Inventor： Daan Maurits Slotboom , Michiel Kupers
Abstract: Performance measurement targets are used to measure performance of a lithographic process after processing a number of substrates. In a set-up phase, the method selects an alignment mark type and alignment recipe from among a plurality of candidate mark types by reference to expected parameters of the patterning process. After exposing a number of test substrates using the patterning process, a preferred metrology target type and metrology recipe are selected by comparing measured performance (e.g. overlay) of performance of the patterning process measured by a reference technique. Based on the measurements of position measurement marks and performance measurement targets after actual performance of the patterning process, the alignment mark type and/or recipe may be revised, thereby co-optimizing the alignment marks and metrology targets. Alternative run-to-run feedback strategies may also be compared during subsequent operation of the process.
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