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22 条记录 (耗时 0.024 秒)

    Method for determining patterning device pattern based on manufacturability
    1.
    发明授权
    Method for determining patterning device pattern based on manufacturability 有权

    公开(公告)号：US11580289B2

    公开(公告)日：2023-02-14

    申请号：US17297801

    申请日：2019-10-29

    申请人： ASML NETHERLANDS B.V.

    发明人： Roshni Biswas ,  Rafael C. Howell ,  Cuiping Zhang ,  Ningning Jia ,  Jingjing Liu ,  Quan Zhang

    IPC分类号： G06F30/30 ,  G03F7/20 ,  G06F30/398 ,  G06F30/392 ,  G06F119/18

    摘要： A method for determining a patterning device pattern. The method includes obtaining (i) an initial patterning device pattern having at least one feature, and (ii) a desired feature size of the at least one feature, obtaining, based on a patterning process model, the initial patterning device pattern and a target pattern for a substrate, a difference value between a predicted pattern of the substrate image by the initial patterning device and the target pattern for the substrate, determining a penalty value related the manufacturability of the at least one feature, wherein the penalty value varies as a function of the size of the at least one feature, and determining the patterning device pattern based on the initial patterning device pattern and the desired feature size such that a sum of the difference value and the penalty value is reduced.

    Optimization flows of source, mask and projection optics
    3.
    发明授权
    Optimization flows of source, mask and projection optics 有权

    公开(公告)号：US10401732B2

    公开(公告)日：2019-09-03

    申请号：US15451328

    申请日：2017-03-06

    申请人： ASML Netherlands B.V.

    发明人： Duan-Fu Hsu ,  Luoqi Chen ,  Hanying Feng ,  Rafael C. Howell ,  Xinjian Zhou ,  Yi-Fan Chen

    IPC分类号： G03F7/20

    摘要： Embodiments of the present invention provide methods for optimizing a lithographic projection apparatus including optimizing projection optics therein. The current embodiments include several flows including optimizing a source, a mask, and the projection optics and various sequential and iterative optimization steps combining any of the projection optics, mask and source. The projection optics is sometimes broadly referred to as “lens”, and therefore the optimization process may be termed source mask lens optimization (SMLO). SMLO may be desirable over existing source mask optimization process (SMO) or other optimization processes that do not include projection optics optimization, partially because including the projection optics in the optimization may lead to a larger process window by introducing a plurality of adjustable characteristics of the projection optics. The projection optics may be used to shape wavefront in the lithographic projection apparatus, enabling aberration control of the overall imaging process.

    Binarization method and freeform mask optimization flow
    5.
    发明授权
    Binarization method and freeform mask optimization flow 有权

    公开(公告)号：US10990003B2

    公开(公告)日：2021-04-27

    申请号：US16967789

    申请日：2019-02-15

    申请人： ASML NETHERLANDS B.V.

    发明人： Duan-Fu Stephen Hsu ,  Jingjing Liu ,  Rafael C. Howell ,  Xingyue Peng

    IPC分类号： G03F1/70 ,  G06F30/398 ,  G03F1/36

    摘要： A method to determine a mask pattern for a patterning device. The method includes obtaining a target pattern to be printed on a substrate, an initial continuous tone image corresponding to the target pattern, a binarization function (e.g., a sigmoid, an arctan, a step function, etc.) configured to transform the initial continuous tone image, and a process model configured to predict a pattern on the substrate from an output of the binarization function; and generating a binarized image having a mask pattern corresponding to the initial continuous tone image by iteratively updating the initial continuous tone image based on a cost function such that the cost function is reduced. The cost function (e.g., EPE) determines a difference between a predicted pattern determined by the process model and the target pattern.

    Discrete source mask optimization
    6.
    发明授权
    Discrete source mask optimization 有权

    公开(公告)号：US10558124B2

    公开(公告)日：2020-02-11

    申请号：US16257423

    申请日：2019-01-25

    申请人： ASML Netherlands B.V.

    发明人： Xiaofeng Liu ,  Rafael C. Howell

    IPC分类号： G03F7/20

    摘要： A method for improving a lithographic process for imaging a portion of a design layout onto a substrate using a lithographic projection apparatus, the method including: calculating a discrete pupil profile based on a desired pupil profile; selecting a discrete change to the discrete pupil profile; and applying the selected discrete change to the discrete pupil profile. The methods according to various embodiments disclosed herein may reduce the computational cost of discrete optimization from O(an) to O(n) wherein a is constant and n is the number of knobs that can generate discrete change in the pupil profile.

    Method for determining curvilinear patterns for patterning device
    9.
    发明授权
    Method for determining curvilinear patterns for patterning device 有权

    公开(公告)号：US11232249B2

    公开(公告)日：2022-01-25

    申请号：US16976492

    申请日：2019-02-28

    申请人： ASML NETHERLANDS B.V.

    发明人： Quan Zhang ,  Been-Der Chen ,  Rafael C. Howell ,  Jing Su ,  Yi Zou ,  Yen-Wen Lu

    IPC分类号： G06F30/30 ,  G03F1/30 ,  G03F7/20 ,  G06F30/398 ,  G03F1/36 ,  G03F1/70 ,  G06F119/18

    摘要： A method to determine a curvilinear pattern of a patterning device that includes obtaining (i) an initial image of the patterning device corresponding to a target pattern to be printed on a substrate subjected to a patterning process, and (ii) a process model configured to predict a pattern on the substrate from the initial image, generating, by a hardware computer system, an enhanced image from the initial image, generating, by the hardware computer system, a level set image using the enhanced image, and iteratively determining, by the hardware computer system, a curvilinear pattern for the patterning device based on the level set image, the process model, and a cost function, where the cost function (e.g., EPE) determines a difference between a predicted pattern and the target pattern, where the difference is iteratively reduced.

    Profile aware source-mask optimization
    10.
    发明授权
    Profile aware source-mask optimization 有权

    公开(公告)号：US11054750B2

    公开(公告)日：2021-07-06

    申请号：US15023330

    申请日：2014-09-11

    申请人： ASML Netherlands B.V.

    发明人： Duan-Fu Stephen Hsu ,  Rafael C. Howell ,  Feng-Liang Liu

    IPC分类号： G03F7/20

    摘要： A method to improve a lithographic process for imaging a portion of a design layout onto a substrate using a lithographic projection apparatus having an illuminator and projection optics, the method including: computing a multi-variable cost function of a plurality of design variables that are characteristics of the lithographic process, at least some of the design variables being characteristics of the illumination produced by the illuminator and of the design layout, wherein the multi-variable cost function is a function of a three-dimensional resist profile on the substrate, or a three-dimensional radiation field projected from the projection optics, or both; and reconfiguring one or more characteristics of the lithographic process by adjusting the design variables until a predefined termination condition is satisfied.