公开(公告)号：US20200019069A1

公开(公告)日：2020-01-16

申请号：US16468063

申请日：2017-11-28

Applicant: ASML NETHERLANDS B.V.

Inventor： Tanbir HASAN ,  Vivek Kumar JAIN ,  Stefan HUNSCHE ,  Bruno LA FONTAINE

IPC: G03F7/20

Abstract: A method of topography determination, the method including: obtaining a first focus value derived from a computational lithography model modeling patterning of an unpatterned substrate or derived from measurements of a patterned layer on an unpatterned substrate; obtaining a second focus value derived from measurement of a substrate having a topography; and determining a value of the topography from the first and second focus values.

公开(公告)号：US20180031981A1

公开(公告)日：2018-02-01

申请号：US15546592

申请日：2016-01-20

Applicant: ASML Netherlands B.V.

Inventor： Venugopal VELLANKI ,  Vivek Kumar JAIN ,  Stefan HUNSCHE

IPC: G03F7/20 ,  G03F1/84 ,  G06N99/00 ,  G03F1/60

CPC classification number: G03F7/7065 ,  G03F1/60 ,  G03F1/84 ,  G03F7/705 ,  G03F7/70525 ,  G03F7/70641 ,  G03F7/70666 ,  G06F17/5009 ,  G06F17/5081 ,  G06F2217/12 ,  G06N20/00

Abstract: A defect prediction method for a device manufacturing process involving processing one or more patterns onto a substrate, the method including: determining values of one or more processing parameters under which the one or more patterns are processed; and determining or predicting, using the values of the one or more processing parameters, an existence, a probability of existence, a characteristic, and/or a combination selected from the foregoing, of a defect resulting from production of the one or more patterns with the device manufacturing process.

公开(公告)号：US20220035256A1

公开(公告)日：2022-02-03

申请号：US17276533

申请日：2019-09-20

Applicant: ASML NETHERLANDS B.V.

Inventor： Youping ZHANG ,  Weixuan HU ,  Fei YAN ,  Wei PENG ,  Vivek Kumar JAIN

IPC: G03F7/20

Abstract: A method of hot spot ranking for a patterning process. The method includes obtaining (i) a set of hot spots of a patterning process, (ii) measured values of one or more parameters of the patterning process corresponding to the set of hot spots, and (ii) simulated values of the one or more parameters of the patterning process corresponding to the set of hot spots; determining a measurement feedback based on the measured values and the simulated values of the one or more parameters of the patterning process; and determining, via simulation of a process model of the patterning process, a ranking of a hot spot within the set of hot spots based on the measurement feedback.

公开(公告)号：US20210181642A1

公开(公告)日：2021-06-17

申请号：US17162017

申请日：2021-01-29

Applicant: ASML NETHERLANDS B.V.

Inventor： Tanbir HASAN ,  Vivek Kumar JAIN ,  Stefan HUNSCHE ,  Bruno LA FONTAINE

IPC: G03F7/20 ,  G03F9/00

Abstract: A method of topography determination, the method including: obtaining a first focus value derived from a computational lithography model modeling patterning of an unpatterned substrate or derived from measurements of a patterned layer on an unpatterned substrate; obtaining a second focus value derived from measurement of a substrate having a topography; and determining a value of the topography from the first and second focus values.

公开(公告)号：US20180173104A1

公开(公告)日：2018-06-21

申请号：US15580515

申请日：2016-05-25

Applicant: ASML NETHERLANDS B.V.

Inventor： Stefan HUNSCHE ,  Rafael ALDANA LASO ,  Vivek Kumar JAIN ,  Marinus JOCHEMSEN ,  Xinjian ZHOU

IPC: G03F7/20 ,  G06T7/00 ,  G06T3/00

CPC classification number: G03F7/7065 ,  G06T3/0068 ,  G06T7/001 ,  G06T2207/30148

Abstract: A method of defect validation for a device manufacturing process, the method including: obtaining a first image of a pattern processed into an area on a substrate using the device manufacturing process under a first condition; obtaining a metrology image from the area; aligning the metrology image and the first image; and determining from the first image and the metrology image whether the area contains a defect, based on one or more classification criteria.

公开(公告)号：US20240142959A1

公开(公告)日：2024-05-02

申请号：US18407323

申请日：2024-01-08

Applicant: ASML Netherlands B.V.

Inventor： Jill Elizabeth FREEMAN ,  Vivek Kumar JAIN ,  Kuo-Feng PAO ,  Wim Tjibbo TEL

IPC: G05B19/418 ,  G03F1/44 ,  G03F7/00

CPC classification number: G05B19/41875 ,  G03F1/44 ,  G03F7/70508 ,  G05B19/41885 ,  G05B2219/45031

Abstract: Described herein is a method for determining process drifts or outlier wafers over time in semiconductor manufacturing. The method involves obtaining a key performance indicator (KPI) variation (e.g., LCDU) characterizing a performance of a semiconductor process over time, and data associated with a set of factors associated with the semiconductor process. A model of the KPI and the data is used to determine contributions of a first set of factors toward the KPI variation, the first set of factors breaching a statistical threshold. The contributions from the first set of factors toward the KPI variation is removed from the model to obtain a residual KPI variation. Based on the residual KPI variation, a residual value breaching a residual threshold is determined. The residual value indicates process drifts in the semiconductor process over time or an outlier substrate corresponding to the residual value at a certain time.

公开(公告)号：US20210255548A1

公开(公告)日：2021-08-19

申请号：US17313135

申请日：2021-05-06

Applicant: ASML Netherlands B.V.

Inventor： Venugopal VELLANKI ,  Vivek Kumar JAIN ,  Stefan HUNSCHE

IPC: G03F7/20 ,  G06N20/00 ,  G06F30/398 ,  G03F1/60 ,  G03F1/84

Abstract: A defect prediction method for a device manufacturing process involving processing one or more patterns onto a substrate, the method including: determining values of one or more processing parameters under which the one or more patterns are processed; and determining or predicting, using the values of the one or more processing parameters, an existence, a probability of existence, a characteristic, and/or a combination selected from the foregoing, of a defect resulting from production of the one or more patterns with the device manufacturing process.

公开(公告)号：US20200096871A1

公开(公告)日：2020-03-26

申请号：US16696263

申请日：2019-11-26

Applicant: ASML Netherlands B.V.

Inventor： Venugopal VELLANKI ,  Vivek Kumar JAIN ,  Stefan HUNSCHE

IPC: G03F7/20 ,  G06N20/00 ,  G03F1/60 ,  G03F1/84

Abstract: A defect prediction method for a device manufacturing process involving processing one or more patterns onto a substrate, the method including; determining values of one or more processing parameters under which the one or more patterns are processed; and determining or predicting, using the values of the one or more processing parameters, an existence, a probability of existence, a characteristic, and/or a combination selected from the foregoing, of a defect resulting from production of the one or more patterns with the device manufacturing process.