公开(公告)号：US11201200B2

公开(公告)日：2021-12-14

申请号：US16550110

申请日：2019-08-23

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Ming-Hung Chen ,  Sheng-Yu Chen ,  Chang-Lin Yeh ,  Yung-I Yeh

IPC: H01L27/32 ,  H01L25/16 ,  H01L29/786 ,  H01L51/52 ,  H01L27/11 ,  H01L27/15

Abstract: A semiconductor device package includes a display device, an electronic module and a conductive adhesion layer. The display device includes a first substrate and a TFT layer. The first substrate has a first surface and a second surface opposite to the first surface. The TFT layer is disposed on the first surface of the first substrate. The electronic module includes a second substrate and an electronic component. The second substrate has a first surface facing the second surface of the first substrate and a second surface opposite to the first surface. The electronic component is disposed on the second surface of the second substrate. The conductive adhesion layer is disposed between the first substrate and the second substrate.

公开(公告)号：US09984983B2

公开(公告)日：2018-05-29

申请号：US15271555

申请日：2016-09-21

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Chi-Sheng Chung ,  Kuo-Hsien Liao ,  Jin-Feng Yang ,  Chen-Yin Tai ,  Yung-I Yeh

IPC: H01L23/60 ,  H01L23/00 ,  H01L21/56 ,  H01L21/78 ,  H01L23/31 ,  H01L23/367

CPC classification number: H01L23/60 ,  H01L21/565 ,  H01L21/78 ,  H01L23/3121 ,  H01L23/3675 ,  H01L24/17 ,  H01L24/97 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/48227 ,  H01L2224/97 ,  H01L2924/12042 ,  H01L2924/15313 ,  H01L2924/181 ,  H01L2924/19015 ,  H01L2924/19105 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/81

Abstract: The semiconductor package includes a substrate, a die, a first metal layer, a second metal layer and an optional seed layer. The package body at least partially encapsulates the die on the substrate. The seed layer is disposed on the package body and the first metal layer is disposed on the seed layer. The second metal layer is disposed on the first metal layer and the lateral surface of the substrate. The first metal layer and the second metal layer form an outer metal cap that provides thermal dissipation and electromagnetic interference (EMI) shielding.

公开(公告)号：US11997888B2

公开(公告)日：2024-05-28

申请号：US17549784

申请日：2021-12-13

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Ming-Hung Chen ,  Sheng-Yu Chen ,  Chang-Lin Yeh ,  Yung-I Yeh

IPC: H10K59/129 ,  H01L25/16 ,  H01L27/15 ,  H01L29/786 ,  H10B10/00 ,  H10K50/30 ,  H10K59/125

CPC classification number: H10K59/129 ,  H01L25/16 ,  H01L25/167 ,  H01L27/156 ,  H01L29/786 ,  H10B10/125 ,  H10K50/30 ,  H10K59/125

Abstract: A semiconductor device package includes a display device, an electronic module and a conductive adhesion layer. The display device includes a first substrate and a TFT layer. The first substrate has a first surface and a second surface opposite to the first surface. The TFT layer is disposed on the first surface of the first substrate. The electronic module includes a second substrate and an electronic component. The second substrate has a first surface facing the second surface of the first substrate and a second surface opposite to the first surface. The electronic component is disposed on the second surface of the second substrate. The conductive adhesion layer is disposed between the first substrate and the second substrate.

公开(公告)号：US20170012007A1

公开(公告)日：2017-01-12

申请号：US15271555

申请日：2016-09-21

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Chi-Sheng Chung ,  Kuo-Hsien Liao ,  Jin-Feng Yang ,  Chen-Yin Tai ,  Yung-I Yeh

IPC: H01L23/60 ,  H01L21/78 ,  H01L23/31 ,  H01L21/56 ,  H01L23/367 ,  H01L23/00

CPC classification number: H01L23/60 ,  H01L21/565 ,  H01L21/78 ,  H01L23/3121 ,  H01L23/3675 ,  H01L24/17 ,  H01L24/97 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/48227 ,  H01L2224/97 ,  H01L2924/12042 ,  H01L2924/15313 ,  H01L2924/181 ,  H01L2924/19015 ,  H01L2924/19105 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/81

Abstract: The semiconductor package includes a substrate, a die, a first metal layer, a second metal layer and an optional seed layer. The package body at least partially encapsulates the die on the substrate. The seed layer is disposed on the package body and the first metal layer is disposed on the seed layer. The second metal layer is disposed on the first metal layer and the lateral surface of the substrate. The first metal layer and the second metal layer form an outer metal cap that provides thermal dissipation and electromagnetic interference (EMI) shielding.

Abstract translation: 半导体封装包括基板，管芯，第一金属层，第二金属层和可选的种子层。 封装体至少部分地将裸片封装在基板上。 种子层设置在包装体上，第一金属层设置在种子层上。 第二金属层设置在第一金属层和基板的侧表面上。 第一金属层和第二金属层形成外部金属帽，其提供散热和电磁干扰（EMI）屏蔽。

公开(公告)号：US09484313B2

公开(公告)日：2016-11-01

申请号：US13779249

申请日：2013-02-27

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Chi-Sheng Chung ,  Kuo-Hsien Liao ,  Jin-Feng Yang ,  Chen-Yin Tai ,  Yung-I Yeh

IPC: H01L23/552 ,  H01L23/60 ,  H01L23/00

CPC classification number: H01L23/60 ,  H01L21/565 ,  H01L21/78 ,  H01L23/3121 ,  H01L23/3675 ,  H01L24/17 ,  H01L24/97 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/48227 ,  H01L2224/97 ,  H01L2924/12042 ,  H01L2924/15313 ,  H01L2924/181 ,  H01L2924/19015 ,  H01L2924/19105 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/81

Abstract: The semiconductor package includes a substrate, a die, a first metal layer, a second metal layer and an optional seed layer. The package body at least partially encapsulates the die on the substrate. The seed layer is disposed on the package body and the first metal layer is disposed on the seed layer. The second metal layer is disposed on the first metal layer and the lateral surface of the substrate. The first metal layer and the second metal layer form an outer metal cap that provides thermal dissipation and electromagnetic interference (EMI) shielding.

Abstract translation: 半导体封装包括基板，管芯，第一金属层，第二金属层和可选的种子层。 封装体至少部分地将裸片封装在基板上。 种子层设置在包装体上，第一金属层设置在种子层上。 第二金属层设置在第一金属层和基板的侧表面上。 第一金属层和第二金属层形成外部金属帽，其提供散热和电磁干扰（EMI）屏蔽。

公开(公告)号：US12218077B2

公开(公告)日：2025-02-04

申请号：US17705216

申请日：2022-03-25

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Cheng-Nan Lin ,  Ming-Chiang Lee ,  Yung-I Yeh

IPC: H01L23/00 ,  H01L23/538 ,  H01L25/18

Abstract: A semiconductor device package is disclosed. The semiconductor device package includes a carrier, a first electronic component disposed on the carrier and a support component disposed on the carrier. The semiconductor device package also includes a second electronic component disposed on the first electronic component and supported by the support component.

公开(公告)号：US11081473B2

公开(公告)日：2021-08-03

申请号：US16550111

申请日：2019-08-23

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Ming-Hung Chen ,  Sheng-Yu Chen ,  Chang-Lin Yeh ,  Yung-I Yeh

IPC: H01L25/16 ,  H01L23/00 ,  H01L33/56 ,  H01L23/48 ,  H01L23/528 ,  H01L27/12 ,  H01L33/62 ,  H01L23/522 ,  H01L21/285

Abstract: A semiconductor device package includes a first substrate, a dielectric layer, a thin film transistor (TFT) and an electronic component. The first substrate has a first surface and a second surface opposite to the first surface. The dielectric layer is disposed on the first surface of the first substrate. The dielectric layer has a first surface facing away from the first substrate and a second surface opposite to the first surface. The TFT layer is disposed on the dielectric layer. The electronic component is disposed on the second surface of the first substrate. A roughness of the first surface of the dielectric layer is less than a roughness of the first surface of the first substrate.

公开(公告)号：US20140239464A1

公开(公告)日：2014-08-28

申请号：US13779249

申请日：2013-02-27

Applicant: ADVANCED SEMICONDUCTOR ENGINEERING, INC.

Inventor： Chi-Sheng Chung ,  Kuo-Hsien Liao ,  Jin-Feng Yang ,  Chen-Yin Tai ,  Yung-I Yeh

IPC: H01L23/60 ,  H01L21/78

CPC classification number: H01L23/60 ,  H01L21/565 ,  H01L21/78 ,  H01L23/3121 ,  H01L23/3675 ,  H01L24/17 ,  H01L24/97 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/48227 ,  H01L2224/97 ,  H01L2924/12042 ,  H01L2924/15313 ,  H01L2924/181 ,  H01L2924/19015 ,  H01L2924/19105 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/81

Abstract: The semiconductor package includes a substrate, a die, a first metal layer, a second metal layer and an optional seed layer. The package body at least partially encapsulates the die on the substrate. The seed layer is disposed on the package body and the first metal layer is disposed on the seed layer. The second metal layer is disposed on the first metal layer and the lateral surface of the substrate. The first metal layer and the second metal layer form an outer metal cap that provides thermal dissipation and electromagnetic interference (EMI) shielding.

Abstract translation: 半导体封装包括基板，管芯，第一金属层，第二金属层和可选的种子层。 封装体至少部分地将裸片封装在基板上。 种子层设置在包装体上，第一金属层设置在种子层上。 第二金属层设置在第一金属层和基板的侧表面上。 第一金属层和第二金属层形成外部金属帽，其提供散热和电磁干扰（EMI）屏蔽。