-
公开(公告)号：US10923626B2
公开(公告)日：2021-02-16
申请号：US16547166
申请日：2019-08-21
Applicant: Apple Inc.
Inventor： David P. Bour , Dmitry S. Sizov , Daniel A. Haeger , Xiaobin Xin
Abstract: LEDs and methods of forming LEDs with various structural configurations to mitigate non-radiative recombination at the LED sidewalls are described. The various configurations described include combinations of LED sidewall surface diffusion with pillar structure, modulated doping profiles to form an n-p superlattice along the LED sidewalls, and selectively etched cladding layers to create entry points for shallow doping or regrowth layers.
-
公开(公告)号：US20190115495A1
公开(公告)日：2019-04-18
申请号：US16219897
申请日：2018-12-13
Applicant: Apple Inc.
Inventor： David P. Bour , Kelly McGroddy , Daniel Arthur Haeger , James Michael Perkins , Arpan Chakraborty , Jean-Jacques P. Drolet , Dmitry S. Sizov
CPC classification number: H01L33/06 , H01L33/0008 , H01L33/0025 , H01L33/0062 , H01L33/145 , H01L33/20 , H01L33/24 , H01L33/305 , H01L33/44 , H01L33/56
Abstract: LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.
-
公开(公告)号：US20180097145A1
公开(公告)日：2018-04-05
申请号：US15828081
申请日：2017-11-30
Applicant: Apple Inc.
Inventor： David P. Bour , Kelly McGroddy , Daniel Arthur Haeger , James Michael Perkins , Arpan Chakraborty , Jean-Jacques P. Drolet , Dmitry S. Sizov
CPC classification number: H01L33/06 , H01L33/0008 , H01L33/0025 , H01L33/0062 , H01L33/145 , H01L33/20 , H01L33/24 , H01L33/305 , H01L33/44 , H01L33/56
Abstract: LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.
-
公开(公告)号：US09865772B2
公开(公告)日：2018-01-09
申请号：US15444218
申请日：2017-02-27
Applicant: Apple Inc.
Inventor： David P. Bour , Kelly McGroddy , Daniel Arthur Haeger , James Michael Perkins , Arpan Chakraborty , Jean-Jacques P. Drolet , Dmitry S. Sizov
CPC classification number: H01L33/06 , H01L33/0008 , H01L33/0025 , H01L33/0062 , H01L33/145 , H01L33/20 , H01L33/24 , H01L33/305 , H01L33/44 , H01L33/56
Abstract: LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.
-
公开(公告)号：US20170170360A1
公开(公告)日：2017-06-15
申请号：US15444218
申请日：2017-02-27
Applicant: Apple Inc.
Inventor： David P. Bour , Kelly McGroddy , Daniel Arthur Haeger , James Michael Perkins , Arpan Chakraborty , Jean-Jacques P. Drolet , Dmitry S. Sizov
CPC classification number: H01L33/06 , H01L33/0008 , H01L33/0025 , H01L33/0062 , H01L33/145 , H01L33/20 , H01L33/24 , H01L33/305 , H01L33/44 , H01L33/56
Abstract: LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.
-
Patent Agency Ranking
公开(公告)号：US10418519B2
公开(公告)日：2019-09-17
申请号：US15777169
申请日：2016-12-14
Applicant: Apple Inc.
Inventor： David P. Bour , Dmitry S. Sizov , Daniel A. Haeger , Xiaobin Xin
Abstract: LEDs and methods of forming LEDs with various structural configurations to mitigate non-radiative recombination at the LED sidewalls are described. The various configurations described include combinations of LED sidewall surface diffusion with pillar structure, modulated doping profiles to form an n-p superlattice along the LED sidewalls, and selectively etched cladding layers to create entry points for shallow doping or regrowth layers.
-
公开(公告)号：US09601659B2
公开(公告)日：2017-03-21
申请号：US15199803
申请日：2016-06-30
Applicant: Apple Inc.
Inventor： David P. Bour , Kelly McGroddy , Daniel Arthur Haeger , James Michael Perkins , Arpan Chakraborty , Jean-Jacques P. Drolet , Dmitry S. Sizov
IPC: H01L29/06 , H01L31/00 , H01L33/06 , H01L33/00 , H01L33/30 , H01L33/20 , H01L33/24 , H01L33/44 , H01L33/56
CPC classification number: H01L33/06 , H01L33/0025 , H01L33/20 , H01L33/24 , H01L33/30 , H01L33/44 , H01L33/56
Abstract: LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.
-
公开(公告)号：US20160197232A1
公开(公告)日：2016-07-07
申请号：US14853614
申请日：2015-09-14
Applicant: Apple Inc.
Inventor： David P. Bour , Kelly McGroddy , Daniel Arthur Haeger , James Michael Perkins , Arpan Chakraborty , Jean-Jacques P. Drolet
CPC classification number: H01L33/06 , H01L33/20 , H01L33/24 , H01L33/30 , H01L33/38 , H01L33/44 , H01L33/56
Abstract: LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.
Abstract translation: 公开了LED结构，以减少沿着垂直LED的侧壁的非辐射侧壁复合，包括跨越顶部电流扩散层的p-n二极管侧壁，底部电流扩展层以及顶部电流扩散层和底部电流扩散层之间的有源层。
-
公开(公告)号：US10734542B2
公开(公告)日：2020-08-04
申请号：US16688754
申请日：2019-11-19
Applicant: Apple Inc.
Inventor： David P. Bour , Dmitry S. Sizov
Abstract: Light emitting diodes are described. In an embodiment, an LED includes a graded p-side spacer layer on a p-type confinement layer, and the graded p-side spacer layer graded from an initial band gap adjacent the p-type confinement layer to a lower band gap. For example, the graded band gap may be achieved by a graded Aluminum concentration.
-
公开(公告)号：US20200052158A1
公开(公告)日：2020-02-13
申请号：US16547166
申请日：2019-08-21
Applicant: Apple Inc.
Inventor： David P. Bour , Dmitry S. Sizov , Daniel A. Haeger , Xiaobin Xin
Abstract: LEDs and methods of forming LEDs with various structural configurations to mitigate non-radiative recombination at the LED sidewalls are described. The various configurations described include combinations of LED sidewall surface diffusion with pillar structure, modulated doping profiles to form an n-p superlattice along the LED sidewalls, and selectively etched cladding layers to create entry points for shallow doping or regrowth layers.
-
-
-
-
-
-
-
-
-
Search Results
18
records
(took 0.024 seconds)
