Abstract:
A touch screen may be formed from a display and perimeter touch electrodes. Touches detected at one or more of the perimeter touch electrodes can be imputed to touch on a region of the display of the touch screen adjacent to the perimeter touch electrodes. In some examples, the perimeter touch electrodes comprise segmented frit metal arranged around the perimeter of the display (e.g., frit metal used to encapsulate the display). In some examples, the perimeter touch electrodes can be coupled to one or more touch sensing circuits via switching circuitry. In some examples, the switching circuitry can be operated based on control signals shared with the display circuitry.
Abstract:
A touch sensor panel comprising a first touch node electrode of a plurality of touch node electrodes, the first touch node electrode coupled to a first sense connection comprising a first set of traces, the first sense connection configured to have a first resistance per unit length that varies along a length of the first sense connection, and a second touch node electrode of the plurality of touch node electrodes, the second touch node electrode coupled to a second sense connection comprising a second set of traces, the second sense connection configured to have a second resistance per unit length that varies along a length of the second sense connection differently than the first resistance per unit length varies along the length of the first sense connection. An effective resistance of the first sense connection and the second sense connection are equal.
Abstract:
A display may have an array of pixels arranged in rows and columns. Each pixel may have a transistor for controlling the amount of output light associated with that pixel. The transistors may be thin-film transistors having active areas, first and second source-drain terminals, and gates. Gate lines may be used to distribute gate control signals to the gates of the transistors in each row. Data lines that run perpendicular to the gate lines may be used to distribute image data along columns of pixels. The gate lines may be connected to gate line extensions that run parallel to the data lines. The data lines may each overlap a respective one of the gate line extensions. Vias may be used to connect the gate line extensions to the gate lines. The gate line extensions may all have the same length.
Abstract:
A driver circuit configured to output a control signal to a row of display pixels is provided. The driver circuit can include a first transistor having a drain terminal coupled to a first positive power supply line, a gate terminal, and a source terminal that is coupled to an output port of the driver circuit on which the control signal is generated and a second transistor having a drain terminal coupled to the output port of the driver circuit, a gate terminal, and a source terminal that is coupled to a first ground power supply line. The first and second transistors can be coupled to a plurality of transistors coupled between a second positive power supply line and a second ground power supply line, configured to receive one or more clocks signals, and at least some of which include bottom gate terminals.
Abstract:
A display includes a plurality of pixels grouped into a plurality of lines of pixels. Each line of pixels of the plurality of lines comprises a group of pixels of the plurality of pixels that are coupled to a common scan line as well and that are coupled to different data lines to individually activate each pixel of the group of pixels. The display also includes a common voltage (VCOM) driving circuit configured to receive a waveform and drive the waveform to the display as a VCOM having a value tailored to an individually activated pixel of the group of pixels.
Abstract:
A display may have pixels configured to display images. The pixels may be formed from thin-film transistor circuitry on a substrate. Color filter elements formed from colored polymer such as colored photoimageable polymer may be formed on the substrate. A black matrix formed from black photoimageable polymer may have an array of openings. The colored polymer may have first portions that overlap the black matrix and second portions in the openings that form the color filter elements. In some portions of the pixels, the thin-film transistor circuitry may be interposed between the first portions of the colored polymer and the black matrix. In other portions of the pixels, data lines may be formed that are overlapped by the black matrix and that are interposed between the first portions of the colored polymer and the black matrix.
Abstract:
A display device may include a plurality of pixels, a plurality of source lines that may provide a plurality of data line signals to the plurality of pixels, a plurality of gate lines that may provide a plurality of gate signals to a plurality of switches associated with the plurality of pixels, and a plurality of voltage gate lines disposed parallel to the plurality of source lines and coupled to the plurality of gate lines at a plurality of cross point nodes. The plurality of cross point nodes are positioned in a pseudo random order across the display device.
Abstract:
A display may have an array of pixels arranged in rows and columns. Each pixel may have a transistor for controlling the amount of output light associated with that pixel. The transistors may be thin-film transistors having active areas, first and second source-drain terminals, and gates. Gate lines may be used to distribute gate control signals to the gates of the transistors in each row. Data lines that run perpendicular to the gate lines may be used to distribute image data along columns of pixels. The gate lines may be connected to gate line extensions that run parallel to the data lines. The data lines may each overlap a respective one of the gate line extensions. Vias may be used to connect the gate line extensions to the gate lines. The gate line extensions may all have the same length.
Abstract:
A method is provided for fabricating a thin-film transistor (TFT). The method includes forming a semiconductor layer over a gate insulator that covers a gate electrode, and depositing an insulator layer over the semiconductor layer, as well as etching the insulator layer to form a patterned etch-stop without losing the gate insulator. The method also includes forming a source electrode and a drain electrode over the semiconductor layer and the patterned etch-stop. The method further includes removing a portion of the semiconductor layer beyond the source electrode and the drain electrode such that a remaining portion of the semiconductor layer covers the gate insulator in a first overlapping area of the source electrode and the gate electrode and a second overlapping area of the drain electrode and gate electrode.
Abstract:
A method is provided for fabricating a thin-film transistor (TFT). The method includes forming a semiconductor layer over a gate insulator that covers a gate electrode, and depositing an insulator layer over the semiconductor layer, as well as etching the insulator layer to form a patterned etch-stop without losing the gate insulator. The method also includes forming a source electrode and a drain electrode over the semiconductor layer and the patterned etch-stop. The method further includes removing a portion of the semiconductor layer beyond the source electrode and the drain electrode such that a remaining portion of the semiconductor layer covers the gate insulator in a first overlapping area of the source electrode and the gate electrode and a second overlapping area of the drain electrode and gate electrode.