公开(公告)号：US11848202B2

公开(公告)日：2023-12-19

申请号：US17456967

申请日：2021-11-30

Applicant: Applied Materials, Inc.

Inventor： Zhepeng Cong ,  Mostafa Baghbanzadeh ,  Tao Sheng ,  Enle Choo

IPC: C23C16/455 ,  C23C16/46 ,  G01B17/02 ,  C23C16/52 ,  C23C16/44 ,  H01L21/02

CPC classification number: H01L21/02293 ,  C23C16/4412 ,  C23C16/455 ,  C23C16/463 ,  C23C16/52 ,  G01B17/02 ,  G01B17/025

Abstract: The present disclosure generally relates to process chambers for semiconductor processing. In one embodiment, a growth monitor for substrate processing is provided. The growth monitor includes a sensor holder and a crystal disposed in the sensor holder having a front side and a back side. An opening is formed in the sensor holder exposing a front side of the crystal. A gas inlet is disposed through the sensor holder to a plenum formed by the back side of the crystal and the sensor holder. A gas outlet is fluidly coupled to the plenum.

公开(公告)号：US12196617B2

公开(公告)日：2025-01-14

申请号：US17609335

申请日：2020-06-29

Applicant: Applied Materials, Inc.

Inventor： Zuoming Zhu ,  Shu-Kwan Lau ,  Enle Choo ,  Ala Moradian ,  Flora Fong-Song Chang ,  Maxim D. Shaposhnikov ,  Bindusagar Marath Sankarathodi ,  Zhepeng Cong ,  Zhiyuan Ye ,  Vilen K. Nestorov ,  Surendra Singh Srivastava ,  Saurabh Chopra ,  Patricia M. Liu ,  Errol Antonio C. Sanchez ,  Jenny C. Lin ,  Schubert S. Chu

IPC: G01J5/00 ,  H01L21/67

Abstract: An apparatus for controlling temperature profile of a substrate within an epitaxial chamber includes a bottom center pyrometer and a bottom outer pyrometer to respectively measure temperatures at a center location and an outer location of a first surface of a susceptor of an epitaxy chamber, a top center pyrometer and a top outer pyrometer to respectively measure temperatures at a center location and an outer location of a substrate disposed on a second surface of the susceptor opposite the first surface, a first controller to receive signals, from the bottom center pyrometer and the bottom outer pyrometer, and output a feedback signal to a first heating lamp module that heats the first surface based on the measured temperatures of the first surface, and a second controller to receive signals, from the top center pyrometer, the top outer pyrometer, the bottom center pyrometer, and the bottom outer pyrometer, and output a feedback signal to a second heating lamp module that heats the substrate based on the measured temperatures of a substrate and the measured temperatures of the first surface.

公开(公告)号：US12165934B2

公开(公告)日：2024-12-10

申请号：US16938510

申请日：2020-07-24

Applicant: Applied Materials, Inc.

Inventor： Zuoming Zhu ,  Shu-Kwan Lau ,  Ala Moradian ,  Enle Choo ,  Flora Fong-Song Chang ,  Vilen K Nestorov ,  Zhiyuan Ye ,  Bindusagar Marath Sankarathodi ,  Maxim D. Shaposhnikov ,  Surendra Singh Srivastava ,  Zhepeng Cong ,  Patricia M. Liu ,  Errol C. Sanchez ,  Jenny C. Lin ,  Schubert S. Chu ,  Balakrishnam R. Jampana

IPC: H01L21/66 ,  H01L21/67

Abstract: A method for processing a substrate within a processing chamber comprises receiving a first radiation signal corresponding to a film on a target element disposed within the processing chamber, analyzing the first radiation signal, and controlling the processing of the substrate based on the analyzed first radiation signal. The processing chamber includes a substrate support configured to support the substrate within a processing volume and a controller coupled to a first sensing device configured to receive the first radiation signal.

公开(公告)号：US11261538B1

公开(公告)日：2022-03-01

申请号：US17027385

申请日：2020-09-21

Applicant: Applied Materials, Inc.

Inventor： Ala Moradian ,  Zuoming Zhu ,  Patricia M. Liu ,  Shu-Kwan Lau ,  Flora Fong-Song Chang ,  Enle Choo ,  Zhiyuan Ye

IPC: C30B25/16 ,  H01L21/67 ,  C30B25/10

Abstract: The present invention provides methods and apparatus for processing semiconductor substrates in an epitaxy chamber configured to map a temperature profile for both substrates and interior chamber components. In one embodiment, the semiconductor processing chamber has a body having ceiling and a lower portion defining an interior volume. A substrate support is disposed in the interior volume. A mounting plate is coupled to the ceiling outside the interior volume. A movement assembly is coupled to the mounting plate. A sensor is coupled to the movement assembly and moveable relative to the ceiling. The sensor is configured to detect a temperature location in the interior volume.