公开(公告)号：US12165934B2

公开(公告)日：2024-12-10

申请号：US16938510

申请日：2020-07-24

Applicant: Applied Materials, Inc.

Inventor： Zuoming Zhu ,  Shu-Kwan Lau ,  Ala Moradian ,  Enle Choo ,  Flora Fong-Song Chang ,  Vilen K Nestorov ,  Zhiyuan Ye ,  Bindusagar Marath Sankarathodi ,  Maxim D. Shaposhnikov ,  Surendra Singh Srivastava ,  Zhepeng Cong ,  Patricia M. Liu ,  Errol C. Sanchez ,  Jenny C. Lin ,  Schubert S. Chu ,  Balakrishnam R. Jampana

IPC: H01L21/66 ,  H01L21/67

Abstract: A method for processing a substrate within a processing chamber comprises receiving a first radiation signal corresponding to a film on a target element disposed within the processing chamber, analyzing the first radiation signal, and controlling the processing of the substrate based on the analyzed first radiation signal. The processing chamber includes a substrate support configured to support the substrate within a processing volume and a controller coupled to a first sensing device configured to receive the first radiation signal.

公开(公告)号：US12125698B2

公开(公告)日：2024-10-22

申请号：US17516326

申请日：2021-11-01

Applicant: Applied Materials, Inc.

Inventor： Lara Hawrylchak ,  Schubert S. Chu ,  Tushar Mandrekar ,  Errol C. Sanchez ,  Kin Pong Lo

IPC: H01L21/02 ,  B08B7/00 ,  C23C16/02 ,  C23C16/24 ,  C23C16/30 ,  C23C16/455 ,  C23C16/505 ,  C23C16/54 ,  C30B25/02 ,  H01J37/32 ,  H01L21/3213 ,  H01L21/67 ,  H01L21/687

CPC classification number: H01L21/02049 ,  B08B7/0035 ,  C23C16/0209 ,  C23C16/0245 ,  C23C16/24 ,  C23C16/30 ,  C23C16/45565 ,  C23C16/505 ,  C23C16/54 ,  C30B25/02 ,  H01J37/32082 ,  H01J37/32357 ,  H01J37/32513 ,  H01J37/32522 ,  H01J37/32899 ,  H01L21/02046 ,  H01L21/02315 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02661 ,  H01L21/32136 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67184 ,  H01L21/67207 ,  H01L21/67248 ,  H01L21/68742 ,  H01J2237/334 ,  H01J2237/335

Abstract: Implementations of the present disclosure generally relates to a transfer chamber coupled to at least one vapor phase epitaxy chamber a plasma oxide removal chamber coupled to the transfer chamber, the plasma oxide removal chamber comprising a lid assembly with a mixing chamber and a gas distributor; a first gas inlet formed through a portion of the lid assembly and in fluid communication with the mixing chamber; a second gas inlet formed through a portion of the lid assembly and in fluid communication with the mixing chamber; a third gas inlet formed through a portion of the lid assembly and in fluid communication with the mixing chamber; and a substrate support with a substrate supporting surface; a lift member disposed in a recess of the substrate supporting surface and coupled through the substrate support to a lift actuator; and a load lock chamber coupled to the transfer chamber.

公开(公告)号：US11164737B2

公开(公告)日：2021-11-02

申请号：US16100399

申请日：2018-08-10

Applicant: Applied Materials, Inc.

Inventor： Lara Hawrylchak ,  Schubert S. Chu ,  Tushar Mandrekar ,  Errol C. Sanchez ,  Kin Pong Lo

IPC: H01L21/02 ,  C30B25/02 ,  C23C16/02 ,  B08B7/00 ,  H01J37/32 ,  C23C16/24 ,  H01L21/67 ,  C23C16/30 ,  C23C16/54 ,  H01L21/687 ,  C23C16/455 ,  C23C16/505 ,  H01L21/3213

Abstract: Implementations of the present disclosure generally relates to a transfer chamber coupled to at least one vapor phase epitaxy chamber a plasma oxide removal chamber coupled to the transfer chamber, the plasma oxide removal chamber comprising a lid assembly with a mixing chamber and a gas distributor; a first gas inlet formed through a portion of the lid assembly and in fluid communication with the mixing chamber; a second gas inlet formed through a portion of the lid assembly and in fluid communication with the mixing chamber; a third gas inlet formed through a portion of the lid assembly and in fluid communication with the mixing chamber; and a substrate support with a substrate supporting surface; a lift member disposed in a recess of the substrate supporting surface and coupled through the substrate support to a lift actuator; and a load lock chamber coupled to the transfer chamber.

公开(公告)号：US11049719B2

公开(公告)日：2021-06-29

申请号：US16057213

申请日：2018-08-07

Applicant: Applied Materials, Inc.

Inventor： Lara Hawrylchak ,  Kin Pong Lo ,  Errol C. Sanchez ,  Schubert S. Chu ,  Tushar Mandrekar

IPC: C30B25/18 ,  H01L21/02 ,  C23C16/02 ,  B08B7/00 ,  H01L21/67 ,  H01J37/32 ,  H01L21/687 ,  C30B25/02 ,  C23C16/54 ,  C30B33/08 ,  C23C16/24 ,  C23C16/46

Abstract: In one implementation, a processing system includes a first transfer chamber coupling to at least one epitaxy process chamber, a second transfer chamber, a transition station disposed between the first transfer chamber and the second transfer chamber, a first plasma chamber coupled to the second transfer chamber for removing oxides from a surface of a substrate, and a load lock chamber coupled to the second transfer chamber. The transition station connects to the first transfer chamber and the second transfer chamber, and the transition station includes a second plasma chamber for removing contaminants from the surface of the substrate.