公开(公告)号：US20250038053A1

公开(公告)日：2025-01-30

申请号：US18361326

申请日：2023-07-28

Applicant: Applied Materials, Inc.

Inventor： Zhepeng Cong ,  Tao Sheng ,  Ala Moradian

IPC: H01L21/66 ,  C23C16/52 ,  C30B25/16 ,  G05B13/02

Abstract: A method of analyzing completion of seasoning of semiconductor processing chambers may include training a model using seasoning cycle characteristics data obtained from existing semiconductor processing chambers. A supervised learning process may label the characteristics data based on expert determined identify seasoning completion and may optionally label the characteristics data based on chamber open event information or preventive maintenance information. The trained model may be used to characterize another chamber during seasoning to determine whether seasoning is completed and/or when or how long or how many seasoning cycles may be performed until seasoning is complete.

公开(公告)号：US11848202B2

公开(公告)日：2023-12-19

申请号：US17456967

申请日：2021-11-30

Applicant: Applied Materials, Inc.

Inventor： Zhepeng Cong ,  Mostafa Baghbanzadeh ,  Tao Sheng ,  Enle Choo

IPC: C23C16/455 ,  C23C16/46 ,  G01B17/02 ,  C23C16/52 ,  C23C16/44 ,  H01L21/02

CPC classification number: H01L21/02293 ,  C23C16/4412 ,  C23C16/455 ,  C23C16/463 ,  C23C16/52 ,  G01B17/02 ,  G01B17/025

Abstract: The present disclosure generally relates to process chambers for semiconductor processing. In one embodiment, a growth monitor for substrate processing is provided. The growth monitor includes a sensor holder and a crystal disposed in the sensor holder having a front side and a back side. An opening is formed in the sensor holder exposing a front side of the crystal. A gas inlet is disposed through the sensor holder to a plenum formed by the back side of the crystal and the sensor holder. A gas outlet is fluidly coupled to the plenum.

公开(公告)号：US12221696B2

公开(公告)日：2025-02-11

申请号：US17871607

申请日：2022-07-22

Applicant: Applied Materials, Inc.

Inventor： Zhepeng Cong ,  Ala Moradian ,  Tao Sheng ,  Nimrod Smith ,  Ashur J. Atanos ,  Vinh N. Tran

IPC: C23C16/458 ,  C23C16/44 ,  H01J37/32

Abstract: The present disclosure relates to flow guides, process kits, and related methods for processing chambers to facilitate deposition process adjustability. In one implementation, a process kit for disposition in a processing chamber applicable for use in semiconductor manufacturing includes a plate having a first face and a second face opposing the first face. The process kit includes a liner. The liner includes an annular section, and one or more ledges extending inwardly relative to the annular section. The one or more ledges are configured to support one or more outer regions of the second face of the plate. The liner includes one or more inlet openings extending to an inner surface of the annular section on a first side of the liner, and one or more outlet openings extending to the inner surface of the annular section on a second side of the liner.

公开(公告)号：US12270752B2

公开(公告)日：2025-04-08

申请号：US17751197

申请日：2022-05-23

Applicant: Applied Materials, Inc.

Inventor： Zhepeng Cong ,  Tao Sheng ,  Ashur J. Atanos

IPC: G01N21/03 ,  C30B25/14 ,  C30B25/16 ,  G01N21/84 ,  H01L21/67

Abstract: A method and apparatus for determining a growth rate on a semiconductor substrate is described herein. The apparatus is an optical sensor, such as an optical growth rate sensor. The optical sensor is positioned in an exhaust of a deposition chamber. The optical sensor is self-heated using one or more internal heating elements, such as a resistive heating element. The internal heating elements are configured to heat a sensor coupon. A film is formed on the sensor coupon by exhaust gases flowed through the exhaust and is correlated to film growth on a substrate within a process volume of the deposition chamber.

公开(公告)号：US12077880B2

公开(公告)日：2024-09-03

申请号：US17243158

申请日：2021-04-28

Applicant: Applied Materials, Inc.

Inventor： Zhepeng Cong ,  Nyi Oo Myo ,  Tao Sheng ,  Yong Zheng

IPC: C30B25/16 ,  C23C14/50 ,  C23C14/54 ,  C23C16/458 ,  C23C16/46 ,  C23C16/52 ,  C30B23/00 ,  C30B23/06 ,  C30B25/10 ,  C30B25/12 ,  G01N21/55 ,  B41J2/16 ,  G01B11/06 ,  H01L21/02 ,  H01L21/66 ,  H01L21/67

CPC classification number: C30B25/16 ,  C23C14/50 ,  C23C14/541 ,  C23C14/547 ,  C23C16/4583 ,  C23C16/46 ,  C23C16/52 ,  C30B23/002 ,  C30B23/063 ,  C30B25/10 ,  C30B25/12 ,  G01N21/55 ,  B01J2219/00443 ,  B41J2/1642 ,  G01B11/0625 ,  G01N2201/062 ,  H01L21/02266 ,  H01L21/02271 ,  H01L21/67253 ,  H01L22/12 ,  H01L22/26

Abstract: Embodiments of the present disclosure generally relate to apparatus, systems, and methods for in-situ film growth rate monitoring. A thickness of a film on a substrate is monitored during a substrate processing operation that deposits the film on the substrate. The thickness is monitored while the substrate processing operation is conducted. The monitoring includes directing light in a direction toward a crystalline coupon. The direction is perpendicular to a heating direction. In one implementation, a reflectometer system to monitor film growth during substrate processing operations includes a first block that includes a first inner surface. The reflectometer system includes a light emitter disposed in the first block and oriented toward the first inner surface, and a light receiver disposed in the first block and oriented toward the first inner surface. The reflectometer system includes a second block opposing the first block.

公开(公告)号：US11948818B2

公开(公告)日：2024-04-02

申请号：US17546769

申请日：2021-12-09

Applicant: Applied Materials, Inc.

Inventor： Zhepeng Cong ,  Tao Sheng ,  Vinh N. Tran

IPC: H01L21/67 ,  G01J5/00 ,  H01L21/3065

CPC classification number: H01L21/67248 ,  G01J5/0007 ,  H01L21/3065

Abstract: A method and apparatus for calibrating a temperature within a processing chamber are described. The method includes determining an etch rate of a layer within the processing chamber. The processing chamber is a deposition chamber configured for use during semiconductor manufacturing. The etch rate is utilized to determine a temperature within the processing chamber. The temperature within the processing chamber is then subsequently compared to a calibrated temperature to determine a temperature offset. The etch rate is determined using any one of a pyrometer, a reflectometer, a camera, or a mass sensor.