公开(公告)号：US10589397B2

公开(公告)日：2020-03-17

申请号：US15424670

申请日：2017-02-03

Applicant: Applied Materials, Inc.

Inventor： Alain Duboust ,  Wen-Chiang Tu ,  Shih-Haur Shen ,  Jimin Zhang ,  Ingemar Carlsson ,  Boguslaw A. Swedek ,  Zhihong Wang ,  Stephen Jew ,  David H. Mai ,  Huyen Tran

IPC: B24B37/013 ,  B24B37/04 ,  H01L21/66 ,  B65B1/36 ,  H01L21/306

Abstract: A difference between a first expected required polish time for a first substrate and a second expected required polish time for a second substrate is determined using a first pre-polish thickness and a second pre-polish thickness measured at an in-line metrology station. A duration of an initial period is determined based on the difference between the first expected required polish time and the second expected required polish time. For the initial period at a beginning of a polishing operation, no pressure is applied to whichever of the first substrate and the second substrate has a lesser expected required polish time while simultaneously pressure is applied to whichever of the first substrate and the second substrate has a greater expected required polish time. After the initial period, pressure is applied to both the first substrate and the second substrate.

公开(公告)号：US20170151647A1

公开(公告)日：2017-06-01

申请号：US15424670

申请日：2017-02-03

Applicant: Applied Materials, Inc.

Inventor： Alain Duboust ,  Wen-Chiang Tu ,  Shih-Haur Shen ,  Jimin Zhang ,  Ingemar Carlsson ,  Boguslaw A. Swedek ,  Zhihong Wang ,  Stephen Jew ,  David H. Mai ,  Huyen Tran

IPC: B24B37/013 ,  H01L21/306 ,  B24B37/04 ,  H01L21/66

Abstract: A difference between a first expected required polish time for a first substrate and a second expected required polish time for a second substrate is determined using a first pre-polish thickness and a second pre-polish thickness measured at an in-line metrology station. A duration of an initial period is determined based on the difference between the first expected required polish time and the second expected required polish time. For the initial period at a beginning of a polishing operation, no pressure is applied to whichever of the first substrate and the second substrate has a lesser expected required polish time while simultaneously pressure is applied to whichever of the first substrate and the second substrate has a greater expected required polish time. After the initial period, pressure is applied to both the first substrate and the second substrate.

公开(公告)号：US20220281070A1

公开(公告)日：2022-09-08

申请号：US17677881

申请日：2022-02-22

Applicant: Applied Materials, Inc.

Inventor： Ekaterina A. Mikhaylichenko ,  Christopher Heung-Gyun Lee ,  Anand N. Iyer ,  Huyen Tran ,  Patrick A. Higashi

IPC: B24B57/02 ,  B24B37/04

Abstract: A method for removing material from a substrate includes dispensing an abrasive slurry on a polishing pad, storing an indication of a relative charge on the abrasive agent, contacting a surface of a substrate to the polishing pad in the presence of the slurry, generating relative motion between the substrate and the polishing pad, measuring a removal rate for the substrate, comparing a the measured removal rate to a target removal rate and determining whether to increase or decrease the removal rate based on the comparison, determining whether to increase or decrease a temperature of an interface between the polishing pad and the substrate based on the indication of the relative charge of the abrasive agent and on whether to increase or decrease the removal rate, and controlling a temperature of the interface as determined to modify the removal rate.

公开(公告)号：US20250114901A1

公开(公告)日：2025-04-10

申请号：US18377615

申请日：2023-10-06

Applicant: Applied Materials, Inc.

Inventor： Zhize Zhu ,  Brian J. Brown ,  Christopher Heung-Gyun Lee ,  Huyen Tran ,  Huanbo Zhang ,  Eric Lau ,  Ekaterina A. Mikhaylichenko

IPC: B24B37/26 ,  B24B37/04

Abstract: A method for chemical mechanical polishing includes rotating a polishing pad about an axis of rotation, positioning a substrate against the polishing pad, dispensing a polishing liquid onto the polishing pad, and oscillating the substrate laterally across the polishing pad. The polishing pad has a polishing-rate adjustment groove that is concentric with the axis of rotation, and a coolant, a dilutant, or both, is dispensed into the polishing-rate adjustment groove such that a polishing rate is reduced in an annular zone of the polishing pad that is positioned radially inward of the polishing-rate adjustment groove. The annular zone surrounds a central zone of the polishing pad in which a polishing rate is not substantially affected by the coolant, dilutant, or both.

公开(公告)号：US20250114898A1

公开(公告)日：2025-04-10

申请号：US18377599

申请日：2023-10-06

Applicant: Applied Materials, Inc.

Inventor： Zhize Zhu ,  Brian J. Brown ,  Christopher Heung-Gyun Lee ,  Huyen Tran ,  Huanbo Zhang ,  Eric Lau ,  Ekaterina A. Mikhaylichenko

IPC: B24B37/10 ,  B24B37/32 ,  B24B57/02

Abstract: A method for chemical mechanical polishing includes bringing a substrate into contact with a polishing pad, causing relative motion between the substrate and polishing pad, dispensing a polishing liquid onto the polishing pad, holding the substrate in a lateral position with a retaining ring secured to a carrier head, and rotating the carrier head about an axis of rotation. The retaining ring has a plurality of channels extending from an inner diameter surface of the retaining ring to an outer diameter surface of the retaining ring such that rotation cause the polishing liquid to be preferentially expelled from a region below an outer edge of the substrate through the plurality of channels.

公开(公告)号：US20250114897A1

公开(公告)日：2025-04-10

申请号：US18377591

申请日：2023-10-06

Applicant: Applied Materials, Inc.

Inventor： Zhize Zhu ,  Brian J. Brown ,  Christopher Heung-Gyun Lee ,  Huyen Tran ,  Huanbo Zhang ,  Eric Lau ,  Ekaterina A. Mikhaylichenko

IPC: B24B37/04 ,  B24B37/005 ,  B24B37/24 ,  B24B37/26

Abstract: A polishing pad has a polishing layer having a polishing surface that has a circular central region and an annular outer region surrounding the central region. The polishing surface can include slurry distribution grooves formed with uniformity spacing across the central region and the annular outer region, and slurry discharge grooves that start at an outer perimeter of the circular central region and extend radially outward to an edge of the polishing pad so as to preferentially discharge the polishing liquid from the annular outer region. The central region can be formed of a first polishing material and the annular outer region can be formed of a second polishing material that is softer than the first polishing material.

公开(公告)号：US20220281061A1

公开(公告)日：2022-09-08

申请号：US17677891

申请日：2022-02-22

Applicant: Applied Materials, Inc.

Inventor： Ekaterina A. Mikhaylichenko ,  Christopher Heung-Gyun Lee ,  Anand N. Iyer ,  Huyen Tran ,  Patrick A. Higashi

IPC: B24B37/015

Abstract: A method for removing material from a substrate includes dispensing an abrasive slurry on a polishing pad, storing an indication of a relative charge on the abrasive agent, contacting a surface of a substrate to the polishing pad in the presence of the slurry, generating relative motion between the substrate and the polishing pad, measuring a removal rate for the substrate, comparing a the measured removal rate to a target removal rate and determining whether to increase or decrease the removal rate based on the comparison, determining whether to increase or decrease a temperature of an interface between the polishing pad and the substrate based on the indication of the relative charge of the abrasive agent and on whether to increase or decrease the removal rate, and controlling a temperature of the interface as determined to modify the removal rate.

公开(公告)号：US20140222188A1

公开(公告)日：2014-08-07

申请号：US14246801

申请日：2014-04-07

Applicant: Applied Materials, Inc.

Inventor： Alain Duboust ,  Wen-Chiang Tu ,  Shih-Haur Shen ,  Jimin Zhang ,  Ingemar Carlsson ,  Boguslaw A. Swedek ,  Zhihong Wang ,  Stephen Jew ,  David H. Mai ,  Huyen Tran

IPC: G06F17/50

CPC classification number: B24B37/013 ,  B24B37/042 ,  B65B1/366 ,  G06F17/5086 ,  H01L21/30625 ,  H01L22/12 ,  H01L22/20 ,  H01L22/26

Abstract: A difference between a first expected required polish time for a first substrate and a second expected required polish time for a second substrate is determined using a first pre-polish thickness and a second pre-polish thickness measured at an in-line metrology station. A duration of an initial period is determined based on the difference between the first expected required polish time and the second expected required polish time. For the initial period at a beginning of a polishing operation, no pressure is applied to whichever of the first substrate and the second substrate has a lesser expected required polish time while simultaneously pressure is applied to whichever of the first substrate and the second substrate has a greater expected required polish time. After the initial period, pressure is applied to both the first substrate and the second substrate.

Abstract translation: 第一衬底的第一预期所需抛光时间与第二衬底的第二预期所需抛光时间之间的差异使用在线计量站测量的第一预抛光厚度和第二预抛光厚度来确定。 基于第一预期所需抛光时间和第二预期所需抛光时间之间的差来确定初始周期的持续时间。 在抛光操作开始时的初始阶段，对于第一基板和第二基板中的任一个具有较少预期的所需抛光时间，而对第一基板和第二基板中的哪一个施加压力同时施加压力 更大的预期需要的抛光时间。 在初始周期之后，对第一基板和第二基板施加压力。