CONTROL OF PROCESSING PARAMETERS FOR SUBSTRATE POLISHING WITH SUBSTRATE PRECESSION

    公开(公告)号:US20220283554A1

    公开(公告)日:2022-09-08

    申请号:US17681673

    申请日:2022-02-25

    Abstract: Generating a recipe for a polishing process includes receiving a target removal profile that includes a target thickness to remove for locations spaced angularly around a center of a substrate, storing a first function providing substrate orientation relative to a carrier head over time, storing a second function defining a polishing rate below a zone of the zone as a function of one or more pressures of one or more zones of the carrier head, and for each particular zone of the plurality of zones, calculate a recipe defining a pressure for the particular zone over time. Calculating the recipe includes calculating an expected thickness profile after polishing from the second function defining the polishing rate and the first function providing substrate orientation relative to the zone over time, and applying a minimizing algorithm to reduce a difference between the expected thickness profile and the target thickness profile.

    Carrier for small pad for chemical mechanical polishing

    公开(公告)号:US09873179B2

    公开(公告)日:2018-01-23

    申请号:US15002193

    申请日:2016-01-20

    CPC classification number: B24B37/20 B24B37/105 B24B37/22 B24B37/26 B24B37/30

    Abstract: A chemical mechanical polishing system includes a substrate support configured to hold a substrate during a polishing operation, a polishing pad assembly include a membrane and a polishing pad portion, a polishing pad carrier, and a drive system configured to cause relative motion between the substrate support and the polishing pad carrier. The polishing pad carrier includes a casing having a cavity and an aperture connecting the cavity to an exterior of the casing. The polishing pad assembly is positioned in the casing such that the membrane divides the cavity into a first chamber and a second chamber and the aperture extends from the second chamber. The polishing pad carrier and polishing pad assembly are positioned and configured such that at least during application of a sufficient pressure to the first chamber the polishing pad portion projects through the aperture.

    CARRIER FOR SMALL PAD FOR CHEMICAL MECHANICAL POLISHING

    公开(公告)号:US20170203405A1

    公开(公告)日:2017-07-20

    申请号:US15002193

    申请日:2016-01-20

    CPC classification number: B24B37/20 B24B37/105 B24B37/22 B24B37/26 B24B37/30

    Abstract: A chemical mechanical polishing system includes a substrate support configured to hold a substrate during a polishing operation, a polishing pad assembly include a membrane and a polishing pad portion, a polishing pad carrier, and a drive system configured to cause relative motion between the substrate support and the polishing pad carrier. The polishing pad carrier includes a casing having a cavity and an aperture connecting the cavity to an exterior of the casing. The polishing pad assembly is positioned in the casing such that the membrane divides the cavity into a first chamber and a second chamber and the aperture extends from the second chamber. The polishing pad carrier and polishing pad assembly are positioned and configured such that at least during application of a sufficient pressure to the first chamber the polishing pad portion projects through the aperture.

    ORBITAL POLISHING WITH SMALL PAD
    5.
    发明申请
    ORBITAL POLISHING WITH SMALL PAD 审中-公开
    ORBITAL POLISHING WITH SMAD PAD

    公开(公告)号:US20160016280A1

    公开(公告)日:2016-01-21

    申请号:US14334608

    申请日:2014-07-17

    CPC classification number: B24B37/10

    Abstract: A chemical mechanical polishing apparatus includes a plate on which a substrate is received, and a movable polishing pad support and coupled polishing pad which move across the substrate and orbit a local region of the substrate during polishing operation. The load of the pad against the substrate, the revolution rate of the pad, and the size, shape, and composition of the pad, may be varied to control the rate of material removed by the pad.

    Abstract translation: 化学机械抛光装置包括其上容纳有基底的板,以及可抛光垫支撑和耦合的抛光垫,其在抛光操作期间移动穿过基板并且在基板的局部区域上轨道。 可以改变衬垫抵靠衬底的载荷,垫的转速以及衬垫的尺寸,形状和组成,以控制衬垫移除的材料的速率。

    MACHINE LEARNING FOR CLASSIFYING RETAINING RINGS

    公开(公告)号:US20220281052A1

    公开(公告)日:2022-09-08

    申请号:US17678932

    申请日:2022-02-23

    Abstract: A method for optimizing polishing includes, for each respective retaining ring of a plurality of retaining rings mounted on a particular carrier head, performing measurements for a bottom surface of the respective retaining ring mounted on the particular carrier head using a coordinate measurement machine and collecting a respective removal profile of a substrate polished using the respective retaining ring. A machine learning model is trained based on the measurements of the bottom surface of the retaining ring and the respective removal profiles.

    Asymmetry correction via oriented wafer loading

    公开(公告)号:US11282755B2

    公开(公告)日:2022-03-22

    申请号:US16552456

    申请日:2019-08-27

    Abstract: A chemical mechanical polishing system includes a metrology station having a sensor configured to measure a thickness profile of a substrate, a robotic arm configured to transfer the substrate from the metrology station to a polishing station having, a platen to support a polishing pad having a polishing surface, a carrier head on the polishing surface, the carrier head having a membrane configured to apply pressure to the substrate in the carrier head, and a controller configured to receive measurements from the sensor and configured to control the robotic arm to orient the substrate in the carrier head according to substrate profile and a removal profile for the carrier head.

    Asymmetry Correction Via Oriented Wafer Loading

    公开(公告)号:US20220208621A1

    公开(公告)日:2022-06-30

    申请号:US17696813

    申请日:2022-03-16

    Abstract: A method for chemical mechanical polishing includes receiving an angular removal profile for a carrier head and an angular thickness profile of a substrate. Prior to polishing the substrate, a desired angle of the carrier head relative to the substrate is selected for loading the substrate into the carrier head. Selecting the desired angle is performed based on a comparison of the angular removal profile for the carrier head and the angular thickness profile of the substrate to reduce angular non-uniformity in polishing. The carrier head is rotated to receive the substrate at the desired angle, the substrate is transferred to the carrier head and loaded in the carrier head with the carrier head at the desired angle relative to the substrate, and the substrate is polished.

    Asymmetry Correction Via Oriented Wafer Loading

    公开(公告)号:US20210066142A1

    公开(公告)日:2021-03-04

    申请号:US16552456

    申请日:2019-08-27

    Abstract: A chemical mechanical polishing system includes a metrology station having a sensor configured to measure a thickness profile of a substrate, a robotic arm configured to transfer the substrate from the metrology station to a polishing station having, a platen to support a polishing pad having a polishing surface, a carrier head on the polishing surface, the carrier head having a membrane configured to apply pressure to the substrate in the carrier head, and a controller configured to receive measurements from the sensor and configured to control the robotic arm to orient the substrate in the carrier head according to substrate profile and a removal profile for the carrier head.

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