公开(公告)号：US20160125780A1

公开(公告)日：2016-05-05

申请号：US14883853

申请日：2015-10-15

Applicant: Applied Materials, Inc.

Inventor： Robert Jan VISSER ,  Michel Anthony ROSA ,  Ananth DODABALAPUR

IPC: G09G3/20 ,  G01C9/10 ,  G01P15/125

CPC classification number: G09G3/20 ,  G01C9/10 ,  G01C22/006 ,  G01P15/006 ,  G01P15/125 ,  G01P15/18 ,  G09G2340/0492

Abstract: Sensors employing control systems determining locations of movable droplets within passageways, and related methods are disclosed. A sensor includes a movable droplet within a passageway supported on a substrate. The droplet may move to and from a quiescent point in the passageway which is at least partially formed by a hydrophobic layer. By including a hydrophobic layer having a hydrophobicity characteristic which decreases according to distance from the quiescent point, the droplet may move to a displacement position outside of the quiescent point in response to an external force. A control system of the sensor determines an acceleration and/or angular position of the sensor based on the displacement position. In this manner, a low cost sensor may be fabricated with without expensive nanostructures.

Abstract translation: 公开了采用确定通道内移动液滴的位置的控制系统的传感器以及相关方法。 传感器包括在支撑在基底上的通道内的可移动液滴。 液滴可以移动到至少部分由疏水层形成的通道中的静止点。 通过包括具有根据距离静止点的距离而减小的疏水性特征的疏水层，液滴可以响应于外力移动到静止点外部的位移位置。 传感器的控制系统基于位移位置确定传感器的加速度和/或角度位置。 以这种方式，可以在没有昂贵的纳米结构的情况下制造低成本传感器。

公开(公告)号：US20150072509A1

公开(公告)日：2015-03-12

申请号：US14459357

申请日：2014-08-14

Applicant: Applied Materials, Inc.

Inventor： Hyo-In CHI ,  Farzad Dean TAJIK ,  Michel Anthony ROSA

IPC: H01L21/02

CPC classification number: H01L21/0262 ,  C23C16/0272 ,  C23C16/42 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02579

Abstract: Embodiments of the present invention generally relate to methods for forming a SiGe layer. In one embodiment, a seed SiGe layer is first formed using plasma enhanced chemical vapor deposition (PECVD), and a bulk SiGe layer is formed directly on the PECVD seed layer also using PECVD. The processing temperature for both seed and bulk SiGe layers is less than 450 degrees Celsius.

Abstract translation: 本发明的实施方案一般涉及形成SiGe层的方法。 在一个实施例中，首先使用等离子体增强化学气相沉积（PECVD）形成种子SiGe层，并且还使用PECVD直接在PECVD晶种层上形成体SiGe层。 种子和体积SiGe层的处理温度低于450摄氏度。

公开(公告)号：US20150022935A1

公开(公告)日：2015-01-22

申请号：US14336650

申请日：2014-07-21

Applicant: Applied Materials, Inc.

Inventor： Michael S. COX ,  Michel Anthony ROSA

IPC: H01L21/683

CPC classification number: H01L21/6831 ,  H01L21/67742

Abstract: Embodiments of the present invention provide an end effector capable of generating an electrostatic chucking force to chuck a substrate disposed therein without damaging the substrate. In one embodiment, an end effector for a robot, the end effector includes a body having an electrostatic chucking force generating assembly, and a mounting end coupled to the body, the mounting end for coupling the body to the robot.

Abstract translation: 本发明的实施例提供一种端部执行器，其能够产生静电吸持力以夹持设置在其中的衬底而不损坏衬底。 在一个实施例中，用于机器人的末端执行器，末端执行器包括具有静电夹紧力产生组件的主体，以及联接到主体的安装端，用于将主体联接到机器人的安装端。