公开(公告)号：US20240117489A1

公开(公告)日：2024-04-11

申请号：US17961553

申请日：2022-10-06

Applicant: Applied Materials, Inc.

Inventor： Amir H. TAVAKOLI ,  Ala MORADIAN ,  Tetsuya ISHIKAWA

IPC: C23C16/44

CPC classification number: C23C16/4404

Abstract: A coating on a processing chamber component includes a metallic bond layer deposited on a surface of the component. A thermal barrier layer is deposited on the bond layer. A substantially non-porous ceramic sealing layer is deposited on the thermal barrier layer. The sealing layer substantially conforms to irregularities of the surface of the thermal barrier layer. A chemistry of the sealing layer is selected for resistance to attack from halogen-containing chemicals.

公开(公告)号：US20240035160A1

公开(公告)日：2024-02-01

申请号：US17874873

申请日：2022-07-27

Applicant: Applied Materials, Inc.

Inventor： Tetsuya ISHIKAWA ,  Ala MORADIAN ,  Karthikeyan BALARAMAN ,  Shashikanth CHENNAKESHAVA

IPC: C23C16/458

CPC classification number: C23C16/4584 ,  C23C16/4581

Abstract: An apparatus for rotating a substrate within a deposition chamber is described. The substrate is rotated using a substrate support assembly with a shaft and a susceptor coupled to a top of the shaft. The susceptor and the shaft are coupled together using a cogged feature. The cogged feature includes a plurality of teeth or projections on a coupling portion of the shaft which interlock with an indent disposed on the bottom of the susceptor. A lift pin assembly is further coupled to the shaft and configured to raise and lower a substrate from the susceptor.

公开(公告)号：US20240117490A1

公开(公告)日：2024-04-11

申请号：US17962310

申请日：2022-10-07

Applicant: Applied Materials, Inc.

Inventor： Amir H. TAVAKOLI ,  Ala MORADIAN ,  Tetsuya ISHIKAWA

IPC: C23C16/44 ,  C23C14/02 ,  C23C14/46 ,  C23C16/02 ,  C23C16/455

CPC classification number: C23C16/4404 ,  C23C14/024 ,  C23C14/46 ,  C23C16/0272 ,  C23C16/45544

Abstract: A coating on a processing chamber component includes a metallic bond layer deposited on a surface of the component. A thermal barrier layer is deposited on the bond layer. A substantially non-porous ceramic sealing layer is deposited on the thermal barrier layer. The sealing layer substantially conforms to irregularities of the surface of the thermal barrier layer. A chemistry of the sealing layer is selected for resistance to attack from halogen-containing chemicals.

公开(公告)号：US20220367216A1

公开(公告)日：2022-11-17

申请号：US17317684

申请日：2021-05-11

Applicant: Applied Materials, Inc.

Inventor： Tetsuya ISHIKAWA ,  Swaminathan T. SRINIVASAN ,  Matthias BAUER ,  Ala MORADIAN ,  Manjunath SUBBANNA ,  Kartik Bhupendra SHAH ,  Kostiantyn ACHKASOV ,  Errol Antonio C. SANCHEZ ,  Michael R. RICE ,  Marc SHULL ,  Ji-Dih HU

IPC: H01L21/67 ,  C23C16/44

Abstract: The present disclosure generally relates to an epitaxial chamber for processing of semiconductor substrates. In one example, the epitaxial chamber has a chamber body assembly. The chamber body assembly includes a lower window and an upper window, wherein chamber body assembly, the lower window and the upper window enclose an internal volume. A susceptor assembly is disposed in the internal volume. The epitaxial chamber also has a plurality of temperature control elements. The plurality of temperature control elements include one or more of an upper lamp module, a lower lamp module, an upper heater, a lower heater, or a heated gas passage.

公开(公告)号：US20220364231A1

公开(公告)日：2022-11-17

申请号：US17317342

申请日：2021-05-11

Applicant: Applied Materials, Inc.

Inventor： Tetsuya ISHIKAWA ,  Swaminathan T. SRINIVASAN ,  Matthias BAUER ,  Ala MORADIAN ,  Manjunath SUBBANNA ,  Kartik Bhupendra SHAH ,  Errol Antonio C. SANCHEZ ,  Sohrab ZOKAEI ,  Michael R. RICE ,  Peter REIMER

IPC: C23C16/455 ,  B01J4/00 ,  C23C16/44

Abstract: The present disclosure generally relates to gas inject apparatus for a process chamber for processing of semiconductor substrates. The gas inject apparatus include one or more gas injectors which are configured to be coupled to the process chamber. Each of the gas injectors are configured to receive a process gas and distribute the process gas across one or more gas outlets. The gas injectors include a plurality of pathways, a fin array, and a baffle array. The gas injectors are individually heated. A gas mixture assembly is also utilized to control the concentration of process gases flown into a process volume from each of the gas injectors. The gas mixture assembly enables the concentration as well as the flow rate of the process gases to be controlled.

公开(公告)号：US20250029850A1

公开(公告)日：2025-01-23

申请号：US18224996

申请日：2023-07-21

Applicant: Applied Materials, Inc.

Inventor： Kim Ramkumar VELLORE ,  Tetsuya ISHIKAWA ,  Ala MORADIAN

IPC: H01L21/67 ,  H01L21/66 ,  H01L21/687

Abstract: The present disclosure relates to methods of analyzing uniformity for substrate processing, and related apparatus and systems, for semiconductor manufacturing. In one or more embodiments, a non-uniformity is indicated, and the non-uniformity is a temperature non-uniformity and/or a physical non-uniformity. In one or more embodiments, a signal profile is accepted or rejected. In one or more embodiments, a method of analyzing uniformity for substrate processing applicable for semiconductor manufacturing includes heating an internal volume of a processing chamber using a target value. The method includes rotating a substrate support, and scanning, while rotating the substrate support, a sensor across one or more sections to take a plurality of readings. The method includes generating a signal profile including the plurality of readings, and analyzing the signal profile by comparing the signal profile to a range.

公开(公告)号：US20240337020A1

公开(公告)日：2024-10-10

申请号：US18747687

申请日：2024-06-19

Applicant: Applied Materials, Inc.

Inventor： Tetsuya ISHIKAWA ,  Swaminathan T. SRINIVASAN ,  Matthias BAUER ,  Ala MORADIAN ,  Manjunath SUBBANNA ,  Kartik Bhupendra SHAH ,  Errol Antonio C. SANCHEZ ,  Sohrab ZOKAEI ,  Michael R. RICE ,  Peter REIMER

IPC: C23C16/455 ,  B01J4/00 ,  C23C16/44

CPC classification number: C23C16/4558 ,  B01J4/005 ,  B01J4/008 ,  C23C16/4412 ,  C23C16/45587

Abstract: The present disclosure generally relates to gas inject apparatus for a process chamber for processing of semiconductor substrates. The gas inject apparatus include one or more gas injectors which are configured to be coupled to the process chamber. Each of the gas injectors are configured to receive a process gas and distribute the process gas across one or more gas outlets. The gas injectors include a plurality of pathways, a fin array, and a baffle array. The gas injectors are individually heated. A gas mixture assembly is also utilized to control the concentration of process gases flown into a process volume from each of the gas injectors. The gas mixture assembly enables the concentration as well as the flow rate of the process gases to be controlled.

公开(公告)号：US20220364261A1

公开(公告)日：2022-11-17

申请号：US17317363

申请日：2021-05-11

Applicant: Applied Materials, Inc.

Inventor： Tetsuya ISHIKAWA ,  Swaminathan T. SRINIVASAN ,  Kartik Bhupendra SHAH ,  Ala MORADIAN ,  Manjunath SUBBANNA ,  Matthias BAUER ,  Peter REIMER ,  Michael R. RICE

IPC: C30B25/08 ,  C30B25/12 ,  C30B25/14 ,  C30B25/10 ,  C23C16/458 ,  C23C16/46 ,  C23C16/455

Abstract: The present disclosure generally relates to a process chamber for processing of semiconductor substrates. The process chamber includes an upper lamp assembly, a lower lamp assembly, a substrate support, an upper window disposed between the substrate support and the upper lamp assembly, a lower window disposed between the lower lamp assembly and the substrate support, an inject ring, and a base ring. Each of the upper lamp assembly and the lower lamp assembly include vertically oriented lamp apertures for the placement of heating lamps therein. The inject ring includes gas injectors disposed therethrough and the base ring includes a substrate transfer passage, a lower chamber exhaust passage, and one or more upper chamber exhaust passages. The gas injectors are disposed over the substrate transfer passage and across from the lower chamber exhaust passage and the one or more upper chamber exhaust passages.

公开(公告)号：US20250027202A1

公开(公告)日：2025-01-23

申请号：US18225007

申请日：2023-07-21

Applicant: Applied Materials, Inc.

Inventor： Tetsuya ISHIKAWA ,  Kim Ramkumar VELLORE

IPC: C23C16/46 ,  G05D23/27

Abstract: The present disclosure relates to methods of adjusting uniformity for substrate processing, and related apparatus and systems, for semiconductor manufacturing. In one or more embodiments, a heating power applied to a set of one or more heat sources is adjusted by an adjustment factor. In one or more embodiments, a method of adjusting uniformity. The method includes scanning a sensor across one or more sections to take a plurality of readings, generating a signal profile including the plurality of readings, and analyzing the signal profile by comparing the signal profile to a range. The method includes adjusting one or more heating parameters if at least one portion of the signal profile is outside of the range. The adjusting includes identifying a set of one or more heat sources that correlate with the at least one portion of the signal profile, and adjusting a heating power by an adjustment factor.

公开(公告)号：US20240209544A1

公开(公告)日：2024-06-27

申请号：US18602099

申请日：2024-03-12

Applicant: Applied Materials, Inc.

Inventor： Tetsuya ISHIKAWA ,  Swaminathan T. Srinivasan ,  Katik Bhupendra Shah ,  Ala Moradian ,  Manjunath Subbanna ,  Matthias Bauer ,  Peter Reimer ,  Michael R. Rice

IPC: C30B25/14 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C23C16/48 ,  C30B25/08 ,  C30B25/10 ,  C30B25/12 ,  H01L21/67 ,  H01L21/677

CPC classification number: C30B25/14 ,  C23C16/4412 ,  C23C16/455 ,  C23C16/45504 ,  C23C16/4558 ,  C23C16/46 ,  C30B25/08 ,  C30B25/10 ,  C30B25/12 ,  H01L21/67115 ,  H01L21/67742 ,  C23C16/4411 ,  C23C16/4584 ,  C23C16/482 ,  H01L21/67748

Abstract: The present disclosure generally relates to a process chamber for processing of semiconductor substrates. The process chamber includes an upper lamp assembly, a lower lamp assembly, a susceptor, an upper window disposed between the substrate support and the upper lamp assembly, a lower window disposed between the lower lamp assembly and the substrate support, an inject ring, and a base ring. The susceptor includes a movement assembly. The movement assembly includes a bearing feedthrough assembly. The bearing feedthrough assembly is a ferrofluidic feedthrough assembly and functions as a ferrofluidic bearing. The bearing feedthrough assembly includes a shaft coupled to the support shaft. The shaft is rotated within the bearing feedthrough assembly. The bearing feedthrough assembly is combined with a first linear spline and a second linear spline.