公开(公告)号：US20150069028A1

公开(公告)日：2015-03-12

申请号：US14533997

申请日：2014-11-05

Applicant: Applied Materials, Inc.

Inventor： Dean JENNINGS ,  Haifan LIANG ,  Mark YAM ,  Vijay PARIHAR ,  Abhilash J. MAYUR ,  Aaron Muir HUNTER ,  Bruce E. ADAMS ,  Joseph Michael RANISH

IPC: B23K26/06 ,  B23K26/00 ,  B23K26/073 ,  H01L21/268 ,  H01L21/324

CPC classification number: B23K26/0608 ,  B23K26/0604 ,  B23K26/0613 ,  B23K26/073 ,  B23K26/0732 ,  B23K26/0736 ,  B23K26/0738 ,  B23K26/352 ,  H01L21/02675 ,  H01L21/2026 ,  H01L21/268 ,  H01L21/324

Abstract: A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 μm is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.

Abstract translation: 一种热处理装置和方法，其中第一激光源例如以10.6μm发射的CO 2作为线束聚焦在硅晶片上，并且第二激光源例如在808nm处发射的GaAs激光棒是 作为围绕线束的较大波束聚焦在晶片上。 沿着线束的窄尺寸的方向同步地扫描两个光束，以在由较大的光束激活时从线束产生窄的加热脉冲。 GaAs辐射的能量大于硅带隙能量，并产生自由载流子。 CO2辐射的能量小于硅带隙能量，因此硅对其透明度不变，但长波长辐射被自由载流子吸收。

公开(公告)号：US20210053147A1

公开(公告)日：2021-02-25

申请号：US17090709

申请日：2020-11-05

Applicant: Applied Materials, Inc.

Inventor： Dean JENNINGS ,  Haifan LIANG ,  Mark YAM ,  Vijay PARIHAR ,  Abhilash J. MAYUR ,  Aaron Muir HUNTER ,  Bruce E. ADAMS ,  Joseph M. RANISH

IPC: B23K26/06 ,  B23K26/352 ,  B23K26/073 ,  H01L21/324 ,  H01L21/268

Abstract: A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 μm is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.

公开(公告)号：US20180099353A1

公开(公告)日：2018-04-12

申请号：US15838010

申请日：2017-12-11

Applicant: Applied Materials, Inc.

Inventor： Dean JENNINGS ,  Haifan LIANG ,  Mark YAM ,  Vijay PARIHAR ,  Abhilash J. MAYUR ,  Aaron Muir HUNTER ,  Bruce E. ADAMS ,  Joseph M. RANISH

IPC: B23K26/06 ,  H01L21/324 ,  H01L21/268 ,  B23K26/073 ,  B23K26/00 ,  H01L21/20

CPC classification number: B23K26/0608 ,  B23K26/0604 ,  B23K26/0613 ,  B23K26/073 ,  B23K26/0732 ,  B23K26/0736 ,  B23K26/0738 ,  B23K26/352 ,  H01L21/02675 ,  H01L21/2026 ,  H01L21/268 ,  H01L21/324

Abstract: A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 μm is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.

公开(公告)号：US20160372351A1

公开(公告)日：2016-12-22

申请号：US15188103

申请日：2016-06-21

Applicant: Applied Materials, Inc.

Inventor： Kaushal K. SINGH ,  Deepak JADHAV ,  Ashutosh AGARWAL ,  Ashish GOEL ,  Vijay PARIHAR ,  Er-Xuan PING ,  Randhir P.S. THAKUR

IPC: H01L21/67 ,  C23C16/455 ,  H01L21/475 ,  H01L21/441 ,  H01L21/02 ,  H01L21/4757

CPC classification number: C23C16/45525 ,  C23C14/56 ,  C23C16/54 ,  H01L21/0217 ,  H01L21/02181 ,  H01L21/02381 ,  H01L21/02568 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/67167 ,  H01L21/6719 ,  H01L21/6723

Abstract: Embodiments described herein provide a remote plasma system utilizing a microwave source. Additionally, generation and deposition techniques for 2D transition metal chalcogenides with large area uniformity utilizing microwave assisted generation of radicals is disclosed. Plasma may be generated remotely utilizing the microwave source. A processing platform configured to deposit 2D transition metal chalcogenides is also disclosed.

Abstract translation: 本文所述的实施例提供了利用微波源的远程等离子体系统。 另外，公开了利用微波辅助生成自由基的具有大面积均匀性的二维过渡金属硫族化物的生成和沉积技术。 可以使用微波源远程产生等离子体。 还公开了一种配置成沉积2D过渡金属硫属化物的处理平台。