公开(公告)号：US11536708B2

公开(公告)日：2022-12-27

申请号：US16738629

申请日：2020-01-09

Applicant: Applied Materials, Inc.

Inventor： Mark J. Saly ,  Keenan Navarre Woods ,  Joseph R. Johnson ,  Bhaskar Jyoti Bhuyan ,  William J. Durand ,  Michael Chudzik ,  Raghav Sreenivasan ,  Roger Quon

IPC: B82Y15/00 ,  B82Y40/00 ,  G01N33/487 ,  B01D67/00 ,  C12Q1/6869

Abstract: Embodiments of the present disclosure provide dual pore sensors and methods for producing these dual pore sensors. The method includes forming a film stack, where the film stack contains two silicon layers and two membrane layers, and then etching the film stack to produce a channel extending therethrough and having two reservoirs and two nanopores. The method also includes depositing a oxide layer on inner surfaces of the reservoirs and nanopores, depositing a dielectric layer on the oxide layer, and forming a metal contact extending through a portion of the stack. The method further includes etching the dielectric layers to form wells, etching the first silicon layer to reveal the protective oxide layer deposited on the inner surfaces of a reservoir, and etching the protective oxide layer deposited on the inner surfaces of the reservoirs and the nanopores.

公开(公告)号：US20210050212A1

公开(公告)日：2021-02-18

申请号：US16989156

申请日：2020-08-10

Applicant: Applied Materials, Inc.

Inventor： William J. Durand ,  Mark Saly ,  Lakmal C. Kalutarage ,  Kang Sub Yim ,  Shaunak Mukherjee

IPC: H01L21/02 ,  H01L21/3205 ,  H01L21/683 ,  C23C16/50 ,  C23C16/24 ,  C23C16/34 ,  C23C16/32 ,  C23C16/40 ,  C23C16/36 ,  C23C16/30

Abstract: Methods for deposition of high-hardness low-κ dielectric films are described. More particularly, a method of processing a substrate is provided. The method includes flowing a precursor-containing gas mixture into a processing volume of a processing chamber having a substrate, the precursor having the general formula (I) wherein R1, R2, R3, R4, R5, R6, R7, and R8 are independently selected from hydrogen (H), alkyl, alkoxy, vinyl, silane, amine, or halide; maintaining the substrate at a pressure in a range of about 0.1 mTorr and about 10 Torr and at a temperature in a range of about 200° C. to about 500° C.; and generating a plasma at a substrate level to deposit a dielectric film on the substrate.

公开(公告)号：US11753715B2

公开(公告)日：2023-09-12

申请号：US16893679

申请日：2020-06-05

Applicant: Applied Materials, Inc.

Inventor： Kenric Choi ,  William J. Durand

IPC: C23C16/00 ,  C23C16/448 ,  C23C16/455 ,  B01F35/20

CPC classification number: C23C16/4482 ,  B01F35/20 ,  C23C16/45553 ,  C23C16/45561 ,  C23C16/45589

Abstract: Apparatus and methods for supplying a vapor to a processing chamber are described. The vapor delivery apparatus comprises an inlet conduit and an outlet conduit, each with two valves, in fluid communication with an ampoule. A bypass conduit connects the inlet conduit and the outlet conduit. A flow restrictive device restricts flow through the outlet conduit.

公开(公告)号：US20220411924A1

公开(公告)日：2022-12-29

申请号：US17360337

申请日：2021-06-28

Applicant: Applied Materials, Inc.

Inventor： William J. Durand ,  Kenric Choi ,  Garry K. Kwong

IPC: C23C16/448

Abstract: Ampoules for a semiconductor manufacturing precursors and methods of use are described. The ampoules include a container with an inlet port and an outlet port. Alternating first and second elongate walls in the container are arranged to define longitudinal flow channels containing a precursor material, and alternating first and second passages between each of the longitudinal flow channels permitting fluid communication between adjacent longitudinal flow channels, wherein the first passages are located in a lower portion of the precursor cavity and the second passages are located an upper portion of the cavity. A flow path is defined by the longitudinal flow channels and the passages, through which a carrier gas flows in contact with the precursor material. In one or more embodiments, the precursor material is a solid.

公开(公告)号：US20210381104A1

公开(公告)日：2021-12-09

申请号：US16893679

申请日：2020-06-05

Applicant: Applied Materials, Inc.

Inventor： Kenric Choi ,  William J. Durand

IPC: C23C16/448 ,  C23C16/455

Abstract: Apparatus and methods for supplying a vapor to a processing chamber are described. The vapor delivery apparatus comprises an inlet conduit and an outlet conduit, each with two valves, in fluid communication with an ampoule. A bypass conduit connects the inlet conduit and the outlet conduit. A flow restrictive device restricts flow through the outlet conduit.