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公开(公告)号：US11798138B2
公开(公告)日：2023-10-24
申请号：US16922972
申请日：2020-07-07
Applicant: Applied Materials Israel Ltd.
Inventor： Yehuda Cohen , Rafael Bistritzer
IPC: G06K9/00 , G06T5/00 , G06T7/70 , G06T7/00 , G01N21/95 , G06V10/24 , G06T3/00 , G01N21/88 , H04N1/387 , G06V10/22
CPC classification number: G06T5/003 , G01N21/8851 , G01N21/9501 , G06T3/0056 , G06T3/0093 , G06T5/006 , G06T7/0004 , G06T7/70 , G06V10/22 , G06V10/243 , G06V10/247 , H04N1/387 , G06T2207/30148
Abstract: There is provided a method and a system configured to compensate for image distortions.
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公开(公告)号：US11686571B2
公开(公告)日：2023-06-27
申请号：US17465753
申请日：2021-09-02
Applicant: Applied Materials Israel Ltd.
Inventor： Roman Kris , Ilan Ben-Harush , Rafael Bistritzer , Vadim Vereschagin , Elad Sommer , Grigory Klebanov , Arundeepth Thamarassery , Jannelle Anna Geva , Gal Daniel Gutterman , Einat Frishman , Sahar Levin
CPC classification number: G01B9/02043 , G01B9/02084 , G01B11/24 , G06T7/001 , G06T2207/30148
Abstract: There is provided a system and method of a method of detecting a local shape deviation of a structural element in a semiconductor specimen, comprising: obtaining an image comprising an image representation of the structural element; extracting, from the image, an actual contour of the image representation; estimating a reference contour of the image representation indicative of a standard shape of the structural element, wherein the reference contour is estimated based on a Fourier descriptor representative of the reference contour, the Fourier descriptor being estimated using an optimization method based on a loss function specifically selected to be insensitive to local shape deviation of the actual contour; and performing one or more measurements representative of one or more differences between the actual contour and the reference contour, the measurements indicative of whether a local shape deviation is present in the structural element.
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公开(公告)号：US11645831B2
公开(公告)日：2023-05-09
申请号：US16922977
申请日：2020-07-07
Applicant: Applied Materials Israel Ltd.
Inventor： Yehuda Cohen , Rafael Bistritzer
CPC classification number: G06T7/001 , G06K9/6218 , G06V10/758 , G06T2207/30148
Abstract: There is provided a method and a system configured obtain an image of a semiconductor specimen including one or more arrays, each including repetitive structural elements, and one or more regions, each region at least partially surrounding a corresponding array and including features different from the repetitive structural elements, wherein the PMC is configured to, during run-time scanning of the semiconductor specimen, perform a correlation analysis between pixel intensity of the image and pixel intensity of a reference image informative of at least one of the repetitive structural elements, to obtain a correlation matrix, use the correlation matrix to distinguish between one or more first areas of the image corresponding to the one or more arrays and one or more second areas of the image corresponding the one or more regions, and output data informative of the one or more first areas of the image.
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公开(公告)号：US11443420B2
公开(公告)日：2022-09-13
申请号：US17135939
申请日：2020-12-28
Applicant: Applied Materials Israel Ltd.
Inventor： Roman Kris , Grigory Klebanov , Einat Frishman , Tal Orenstein , Meir Vengrover , Noa Marom , Ilan Ben-Harush , Rafael Bistritzer , Sharon Duvdevani-Bar
Abstract: There is provided a system and method of generating a metrology recipe usable for examining a semiconductor specimen, comprising: obtaining a first image set comprising a plurality of first images captured by an examination tool, obtaining a second image set comprising a plurality of second images, wherein each second image is simulated based on at least one first image, wherein each second image is associated with ground truth data; performing a first test on the first image set and a second test on the second image set in accordance with a metrology recipe configured with a first parameter set, and determining, in response to a predetermined criterion not being met, to select a second parameter set, configure the metrology recipe with the second parameter set, and repeat the first test and the second test in accordance with the metrology recipe configured with the second parameter set.
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公开(公告)号：US12277750B2
公开(公告)日：2025-04-15
申请号：US18125695
申请日：2023-03-23
Applicant: Applied Materials Israel Ltd.
Inventor： Yehuda Cohen , Rafael Bistritzer
IPC: G06V10/762 , G06F18/23 , G06T7/00 , G06V10/75
Abstract: There is provided a method and a system configured obtain an image of a semiconductor specimen including one or more arrays, each including repetitive structural elements, and one or more regions, each region at least partially surrounding a corresponding array and including features different from the repetitive structural elements, wherein the PMC is configured to, during run-time scanning of the semiconductor specimen, perform a correlation analysis between pixel intensity of the image and pixel intensity of a reference image informative of at least one of the repetitive structural elements, to obtain a correlation matrix, use the correlation matrix to distinguish between one or more first areas of the image corresponding to the one or more arrays and one or more second areas of the image corresponding the one or more regions, and output data informative of the one or more first areas of the image.
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Patent Agency Ranking
公开(公告)号：US12272042B2
公开(公告)日：2025-04-08
申请号：US17565273
申请日：2021-12-29
Applicant: Applied Materials Israel Ltd.
Inventor： Elad Cohen , Victor Egorov , Ilan Ben-Harush , Rafael Bistritzer
Abstract: There is provided a system of examination of a semiconductor specimen, comprising a processor and memory circuitry configured to obtain, for each given candidate defect of a plurality of candidate defects in an image of the specimen, a given area of the given candidate defect in the image, obtain a reference image, perform a segmentation of at least part of the reference image, to determine, for each given candidate defect, first reference areas in the reference image matching a given reference area corresponding to the given area, select among the first reference areas, a plurality of second reference areas, obtain a plurality of corresponding second areas in the image, and use data informative of a pixel intensity of the second areas and data informative of a pixel intensity of the given area to determine whether the given candidate defect corresponds to a defect.
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公开(公告)号：US20230419456A1
公开(公告)日：2023-12-28
申请号：US18367001
申请日：2023-09-12
Applicant: Applied Materials Israel Ltd.
Inventor： Yehuda Cohen , Rafael Bistritzer
IPC: G06T5/00 , G06T7/70 , G06T7/00 , G01N21/95 , G06V10/24 , G06T3/00 , G01N21/88 , H04N1/387 , G06V10/22
CPC classification number: G06T5/003 , G06T7/70 , G06T7/0004 , G01N21/9501 , G06V10/247 , G06T3/0093 , G06V10/243 , G01N21/8851 , G06T5/006 , G06T3/0056 , H04N1/387 , G06V10/22 , G06T2207/30148
Abstract: There is provided a method and a system configured to compensate for image distortions. An example method includes first receiving a warped image of an array of cells of a specimen. Each cell of the array comprises one or more structural elements of a substrate. A reference image of a region associated with a cell of the array of cells is generated and a first cell of the array of cells is identified using the reference image and at least part of the warped image. One or more locations comprising cells that differ from the first cell are identified and, based at least on the one or more locations, a warped compensation transform is determined. The warped compensation transform is applied on the warped image to generate an undistorted image.
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公开(公告)号：US20210295499A1
公开(公告)日：2021-09-23
申请号：US16821831
申请日：2020-03-17
Applicant: APPLIED MATERIALS ISRAEL LTD.
Inventor： Anna Levant , Rafael Bistritzer
Abstract: A method, a non-transitory computer readable medium and a system for determining three dimensional (3D) information of structural elements of a substrate.
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公开(公告)号：US12299868B2
公开(公告)日：2025-05-13
申请号：US17580541
申请日：2022-01-20
Applicant: Applied Materials Israel Ltd.
Inventor： Einat Frishman , Ilan Ben-Harush , Rafael Bistritzer
Abstract: There is provided a system and a method comprising obtaining data Dcontour informative of a contour of an element of a semiconductor specimen acquired by an examination tool, using the data Dcontour to generate a signal informative of a curvature of the contour of the element, determining at least one of data Dperiodicity informative of a periodicity of the signal, or data Ddiscontinuities informative of a number of discontinuities in the signal, wherein each discontinuity is informative of a transition between a convex portion of the contour and a concave portion of the contour, and using at least one of the data Dperiodicity or the data Ddiscontinuities to determine data informative of correct manufacturing of the element.
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公开(公告)号：US11953316B2
公开(公告)日：2024-04-09
申请号：US17024578
申请日：2020-09-17
Applicant: Applied Materials Israel Ltd.
Inventor： Rafael Bistritzer , Anna Levant , Moshe Eliasof , Michael Chemama , Konstantin Chirko
IPC: H01J37/147 , G01B15/02 , G01N23/2251
CPC classification number: G01B15/02 , G01N23/2251 , H01J37/1478 , G01N2223/401 , G01N2223/6116 , G01N2223/6462 , H01J2237/1506
Abstract: There is provided a system and a method comprising obtaining a first (respectively second) image of an area of the semiconductor specimen acquired by an electron beam examination tool at a first (respectively second) illumination angle, determining a plurality of height values informative of a height profile of the specimen in the area, the determination comprising solving an optimization problem which comprises a plurality of functions, each function being representative of a difference between data informative of a grey level intensity at a first location in the first image and data informative of a grey level intensity at a second location in the second image, wherein, for each function, the second location is determined with respect to the first location, or conversely, when solving the optimization problem, wherein a distance between the first and the second locations depends on the height profile, and the first and second illumination angles.
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