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    III-N compound semiconductor device
    1.
    发明授权
    III-N compound semiconductor device 有权
    III-N族化合物半导体器件

    公开(公告)号：US06455877B1

    公开(公告)日：2002-09-24

    申请号：US09657875

    申请日：2000-09-08

    申请人： Atsushi Ogawa ,  Takayuki Yuasa ,  Yoshihiro Ueta ,  Yuhzoh Tsuda ,  Masahiro Araki ,  Mototaka Taneya

    发明人： Atsushi Ogawa ,  Takayuki Yuasa ,  Yoshihiro Ueta ,  Yuhzoh Tsuda ,  Masahiro Araki ,  Mototaka Taneya

    IPC分类号： H01L3300

    CPC分类号： H01L33/32 ,  H01L33/025 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/32341

    摘要： A GaN light-emitting device is provided having a low specific contact resistance of an n-type electrode as well as a low threshold voltage or threshold current density. The GaN light-emitting device has an electrode formed on a nitrogen-terminated surface of a GaN substrate. Specifically, the GaN light-emitting device includes the GaN substrate, a plurality of GaN compound semiconductor layers formed on the GaN substrate, and the n-type electrode and a p-type electrode, wherein the semiconductor substrate is of n-type and the n-type electrode is formed on the nitrogen-terminated surface of the semiconductor substrate. The concentration of n-type impurities in the substrate preferably ranges from 1×1017 cm−3 to 1×1021 cm−3. The substrate preferably includes at least a first portion forming the nitrogen-terminated surface and having a first concentration of n-type impurities and a second portion having a second concentration of n-type impurities lower than the first concentration of n-type impurities.

    摘要翻译： 提供具有n型电极的低比接触电阻以及低阈值电压或阈值电流密度的GaN发光器件。 GaN发光器件具有形成在GaN衬底的氮封端表面上的电极。 具体地，GaN发光器件包括GaN衬底，形成在GaN衬底上的多个GaN化合物半导体层，以及n型电极和p型电极，其中半导体衬底为n型， n型电极形成在半导体衬底的氮封端表面上。 衬底中n型杂质的浓度优选为1×10 17 cm -3至1×10 21 cm -3。 基板优选至少包括形成氮封端表面并具有第一浓度的n型杂质的第一部分和具有比第一浓度的n型杂质低的n型杂质的第二浓度的第二部分。