公开(公告)号：US20170194362A1

公开(公告)日：2017-07-06

申请号：US15351878

申请日：2016-11-15

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xiaming ZHU

IPC: H01L27/12

Abstract: A display substrate and a fabrication method thereof, and a display device are disclosed. The fabrication method of a display substrate, includes forming a first gate electrode on a transparent base substrate; forming a transparent gate insulating layer on the first gate electrode; forming a transparent active layer on the transparent gate insulating layer; forming a transparent source electrode and a transparent drain electrode on the transparent active layer, wherein, the transparent source electrode and the transparent drain electrode do not overlap with the first gate electrode in a thickness direction of the transparent base substrate.

公开(公告)号：US20170092661A1

公开(公告)日：2017-03-30

申请号：US15159385

申请日：2016-05-19

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xiaming ZHU

IPC: H01L27/12 ,  H01L29/417 ,  H01L29/66 ,  H01L29/49 ,  H01L29/24 ,  H01L29/786 ,  H01L29/15 ,  H01L29/423

CPC classification number: H01L27/1225 ,  H01L27/127 ,  H01L29/158 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: The present invention provides a thin film transistor comprising an active layer, the active layer has a superlattice structure, and comprises a plurality of semiconductor layers and an insulating layer between every two adjacent semiconductor layers, a thickness of each of the semiconductor layers and the insulating layers is in nanometer range, and the plurality of semiconductor layers are made of at least one of metal oxide semiconductor and metal nitride oxide semiconductor. The present invention further provides an array substrate and a manufacturing method thereof, and a display device. The thin film transistor has excellent electrical characteristics and reliability, such as higher carrier mobility, lower turn-off leak current and better stability of threshold voltage.

公开(公告)号：US20140168559A1

公开(公告)日：2014-06-19

申请号：US14108856

申请日：2013-12-17

Applicant: BEIJING BOE DISPLAY TECHNOLOGY CO., LTD. ,  BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xiaming ZHU ,  Liang SUN ,  Jianfeng YUAN ,  Seung Moo RIM ,  Xibin SHAO

IPC: G02F1/1333 ,  H01L27/12

CPC classification number: G02F1/136204 ,  H01L27/124

Abstract: According to one aspect of the present invention, the provided is an array substrate. Specifically, the first conductive strip that is coupled to the first data shorting bar and the second conductive strip that is coupled to the second data shorting bar are formed on the array substrate. The width of the first conductive strip is greater than the width of the first data shorting bar. The width of the second conductive strip is greater than the width of the second data shorting bar. The first conductive strip is overlapped with the second conductive strip. Such a structure of the array substrate effectively increases the overlapped capacitance between the data metal layer and the gate metal layer.

Abstract translation: 根据本发明的一个方面，提供了一种阵列基板。 具体地，耦合到第一数据短路棒的第一导电条和耦合到第二数据短路棒的第二导电条形成在阵列基板上。 第一导电条的宽度大于第一数据短路条的宽度。 第二导电条的宽度大于第二数据短路条的宽度。 第一导电带与第二导电带重叠。 阵列基板的这种结构有效地增加了数据金属层与栅极金属层之间的重叠电容。

公开(公告)号：US20210210529A1

公开(公告)日：2021-07-08

申请号：US16074283

申请日：2018-01-23

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Tianmin ZHOU ,  Wei YANG ,  Lizhong WANG ,  Xiaming ZHU ,  Jipeng SONG

IPC: H01L27/12

Abstract: A thin film transistor, a method for manufacturing the same and a display device are disclosed. The thin film transistor includes source-drain electrodes and a passivation layer; an isolation layer is disposed between the source-drain electrodes and the passivation layer, and the isolation layer overlays the source-drain electrodes.

公开(公告)号：US20180122932A1

公开(公告)日：2018-05-03

申请号：US15795941

申请日：2017-10-27

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xiaming ZHU

IPC: H01L29/786 ,  H01L21/70

CPC classification number: H01L29/786 ,  H01L21/707 ,  H01L27/1225 ,  H01L27/127 ,  H01L2021/775

Abstract: The present disclosure provides a TFT, a manufacturing method thereof, an array substrate and a display device. The TFT includes an N-type metal oxide TFT and a P-type metal oxide TFT. The manufacturing method includes a step of forming an active layer of the N-type metal oxide TFT and an active layer of a P-type metal oxide TFT on a base substrate through a single patterning process.

公开(公告)号：US20170207346A1

公开(公告)日：2017-07-20

申请号：US15329180

申请日：2015-11-12

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xiangyong KONG ,  Xiaming ZHU ,  Xiaodi LIU

IPC: H01L29/786 ,  H01L29/66 ,  H01L27/12 ,  H01L29/24

CPC classification number: H01L29/78633 ,  H01L21/28 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/66 ,  H01L29/66969 ,  H01L29/76 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: The present disclosure discloses in embodiments a thin film transistor and a manufacturing method thereof, an array substrate. The thin film transistor comprises: a base substrate, an active layer, a source, a gate, and a drain. Two ends of the active layer are connected to the source and the drain, respectively. The gate comprises a top gate and a bottom gate arranged opposite to each other in a direction perpendicular to the base substrate, the top gate comprising a top gate top portion and a top gate side portion connected to the top gate top portion, the top gate side portion extending from the top gate top portion towards the base substrate. The active layer is sandwiched between the top gate top portion and the bottom gate. A sidewall of the active layer is at least partially surrounded by the top gate side portion.

公开(公告)号：US20140160418A1

公开(公告)日：2014-06-12

申请号：US14103274

申请日：2013-12-11

Applicant: Beijing BOE Display Technology Co., Ltd. ,  BOE Technology Group Co., Ltd.

Inventor： Xiaming ZHU ,  Liang Sun ,  Jianfeng Yuan ,  Seung Moo Rim ,  Xibin Shao

IPC: G02F1/1343

CPC classification number: G02F1/1333 ,  G02F1/1309 ,  G02F1/1345 ,  G02F1/136204 ,  G02F1/136286 ,  G02F2001/134372 ,  G02F2201/121 ,  G02F2202/22

Abstract: The present invention relates to an array substrate for an LCD display and manufacturing method. The array substrate comprise a transparent substrate, gate lines and data lines disposed on the transparent substrate, a transparent conducting bar and a gate short-circuit bar. The transparent conducting bar is disposed below the gate short-circuit bar with the gate short-circuit bar and data lines arranged in the same layer. The present invention avoids the problem of burning the gate short-circuit bar due to the occurrence of static discharge and electrical defects in the array substrate are detectable and repairable in the array test process, improving the product rate of the LCD array substrate.

Abstract translation: 本发明涉及一种液晶显示器用阵列基板及其制造方法。 阵列基板包括透明基板，设置在透明基板上的栅极线和数据线，透明导电条和栅极短路条。 透明导电棒设置在栅极短路棒的下方，栅极短路棒和数据线布置在同一层中。 本发明避免了由于静电放电的发生而导致的栅极短路棒烧毁的问题，并且阵列基板中的电气缺陷在阵列测试过程中是可检测的和可修复的，从而提高了LCD阵列基板的产品率。