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公开(公告)号：US09647141B2
公开(公告)日：2017-05-09
申请号：US15098385
申请日：2016-04-14
发明人： Botao Song , Tao Jiang , Junhao Han , Ling Han , Binbin Cao , Chengshao Yang
IPC分类号： H01L29/10 , H01L29/786 , H01L27/12
CPC分类号： H01L29/78696 , H01L27/1225 , H01L27/127 , H01L27/1288 , H01L29/41733 , H01L29/78606 , H01L29/78633 , H01L29/7869
摘要： Embodiments of the present disclosure provide a thin film transistor (TFT) and a method of manufacturing the same, which enables to decrease the vertical resistance from the source and the drain to the polarity inversion region, so that the current from the source and the drain to the polarity inversion region may be increased, thereby improving the performances of the TFT. An active layer of the TFT is provided with a first groove and a second groove which neither pass through the active layer. A source and a drain of the TFT are formed at least partially in the first groove and the second groove, respectively. The source and the drain contact the active layer through the first groove and the second groove, respectively.
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公开(公告)号：US20160351725A1
公开(公告)日：2016-12-01
申请号：US15098385
申请日：2016-04-14
发明人： Botao Song , Tao Jiang , Junhao Han , Ling Han , Binbin Cao , Chengshao Yang
IPC分类号： H01L29/786 , H01L27/12
CPC分类号： H01L29/78696 , H01L27/1225 , H01L27/127 , H01L27/1288 , H01L29/41733 , H01L29/78606 , H01L29/78633 , H01L29/7869
摘要： Embodiments of the present disclosure provide a thin film transistor (TFT) and a method of manufacturing the same, which enables to decrease the vertical resistance from the source and the drain to the polarity inversion region, so that the current from the source and the drain to the polarity inversion region may be increased, thereby improving the performances of the TFT. An active layer of the TFT is provided with a first groove and a second groove which neither pass through the active layer. A source and a drain of the TFT are formed at least partially in the first groove and the second groove, respectively. The source and the drain contact the active layer through the first groove and the second groove, respectively.
摘要翻译： 本公开的实施例提供一种薄膜晶体管（TFT）及其制造方法，其能够降低从源极和漏极到极性反转区域的垂直电阻，使得来自源极和漏极的电流 可以增加极性反转区域，从而提高TFT的性能。 TFT的有源层设置有不穿过有源层的第一沟槽和第二沟槽。 TFT的源极和漏极分别至少部分地形成在第一沟槽和第二沟槽中。 源极和漏极分别通过第一凹槽和第二凹槽接触有源层。
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公开(公告)号：US10466820B2
公开(公告)日：2019-11-05
申请号：US15524244
申请日：2015-12-11
发明人： Wenlong Wang , Yinhu Huang , Zhiyuan Lin , Ling Han , Jun Ma , Liang Lin
IPC分类号： G06F3/041 , H01L21/77 , G09G3/3225 , H01L27/32 , H01L51/52 , H01L51/56 , G06F3/044 , H01L27/12
摘要： The embodiments of the present invention provide an OLED array substrate, a method for manufacturing the OLED array substrate, and a touch display device. The OLED array substrate includes a first metal layer pattern, a transparent conductive layer pattern, an insulating layer pattern disposed between the first metal layer pattern and the transparent conductive layer pattern. The first metal layer pattern includes a metal bridge line. The transparent conductive layer pattern includes an anode of an OLED, a plurality of first electrodes extending in a first direction and a plurality of second electrodes extending in a second direction. Each of the first electrodes includes a plurality of first sub-electrodes, and each of the first sub-electrodes is electrically connected to a corresponding metal bridge line.
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公开(公告)号：US10372000B2
公开(公告)日：2019-08-06
申请号：US15531294
申请日：2016-05-20
发明人： Botao Song , Liang Lin , Tao Ma , Wenlong Wang , Ling Han , Yu Wei
IPC分类号： G02F1/1362 , H01L27/12 , G02F1/1343 , G02F1/1368
摘要： There is disclosed a method of manufacturing an array substrate, the method including a step of forming thin film transistors on a substrate; wherein the step of forming the thin film transistors on the substrate includes: forming a first electrically conductive layer on the substrate; forming an insulating layer on the first electrically conductive layer; forming at least one common holes in the insulating layer to communicate with the first electrically conductive layer; forming a first connection portion, which is made of the same material as a second electrically conductive layer, in the at least one of the at least one common holes while forming the second electrically conductive layer on the insulating layer by using a single process, the first connection portion being in electrical contact with the first electrically conductive layer. In addition, there is disclosed an array substrate manufactured by the above method and a display device including the array substrate.
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公开(公告)号：US20210181870A1
公开(公告)日：2021-06-17
申请号：US16081674
申请日：2017-11-28
发明人： Xinyang Tang , Tao Jiang , Ling Han , Tao Ma
摘要： The present application discloses a display substrate. The display substrate includes a base substrate; a first sensing layer having a plurality of first sensing electrodes extending substantially along a first direction; and a second sensing layer insulated from the first sensing layer and having a plurality of second sensing electrodes extending substantially along a second direction. Each of the plurality of first sensing electrodes includes a pair of first sub-electrodes substantially parallel to each other and extending substantially along the first direction, and a plurality of first photoconductive bridges each of which interposed between the pair of first sub-electrodes. Each of the plurality of second sensing electrodes includes a pair of second sub-electrodes substantially parallel to each other and extending substantially along the second direction, and a plurality of second photoconductive bridges each of which interposed between the pair of second sub-electrodes.
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公开(公告)号：US10509286B2
公开(公告)日：2019-12-17
申请号：US15518911
申请日：2016-10-09
发明人： Yunhai Wan , Chengshao Yang , Ling Han , Botao Song
IPC分类号： H01L21/28 , G02F1/1368 , H01L29/786 , H01L21/768 , H01L21/84 , H01L27/12 , H01L29/49
摘要： A manufacturing method of the invention, comprising: successively forming an insulation layer and a photoresist layer on a transparent substrate; performing an exposure and a development on the photoresist layer by a back exposure process, so as to form a trench in the photoresist layer, an open area of the trench proximal to the insulation layer is larger than that of the trench distal to the insulation layer; removing a portion of insulation material in a region of the insulation layer exposed through the trench by an etching process, so as to form a slot in the insulation layer; forming a metal layer on a side of the photoresist layer distal to the insulation layer, a portion of the metal layer is embedded in the slot; removing the photoresist layer and the metal layer thereon by a stripping process, and retaining the portion of the metal layer in the slot.
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公开(公告)号：US10317587B2
公开(公告)日：2019-06-11
申请号：US15344098
申请日：2016-11-04
发明人： Tao Ma , Chengshao Yang , Ling Han , Ronghua Jin
IPC分类号： G02B5/22 , G02B5/20 , G06F3/041 , G02F1/1333 , G06F3/044 , H01L27/32 , G02F1/1335
摘要： A fabrication method of a color filter substrate, a color filter substrate and a display device are provided. The fabrication method includes forming an interlayer insulating layer and a first color filter group above the conductive pattern, wherein, the first color filter group includes color filter(s) of at least one color, the interlayer insulating layer and the first color filter group are formed by a same material; the interlayer insulating layer is configured to electrically insulate the conductive connecting portion from the conductive bridging portion.
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8.发明申请公开(公告)号：US20170219748A1
公开(公告)日：2017-08-03
申请号：US15344098
申请日：2016-11-04
发明人： Tao Ma , Chengshao Yang , Ling Han , Ronghua Jin
IPC分类号： G02B5/20
CPC分类号： G02B5/201 , G02F1/13338 , G02F1/133514 , G02F2201/122 , G06F3/0412 , G06F3/0416 , G06F3/044 , G06F2203/04103 , G06F2203/04111 , H01L27/322 , H01L27/323
摘要： Embodiments of the present disclosure disclose a fabrication method of a color filter substrate, a color filter substrate and a display device. The fabrication method includes forming an interlayer insulating layer and a first color filter group above the conductive pattern, wherein, the first color filter group includes color filter(s) of at least one color, the interlayer insulating layer and the first color filter group are formed by a same material; the interlayer insulating layer is configured to electrically insulate the conductive connecting portion from the conductive bridging portion.
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公开(公告)号：US11682679B2
公开(公告)日：2023-06-20
申请号：US17007568
申请日：2020-08-31
发明人： Lin Chen , Chengshao Yang , Tao Ma , Dengfeng Wang , Ling Han
IPC分类号： H01L27/12 , H01L21/311 , H01L21/3213 , G02F1/1343 , H10K50/81 , H10K71/00
CPC分类号： H01L27/1259 , H01L21/31111 , H01L21/31116 , H01L21/32134 , H01L27/1248 , G02F1/13439 , H10K50/81 , H10K71/621
摘要： The present disclosure provides a manufacturing method of a display substrate, a display substrate and a display device, belongs to the field of display technology, and can at least partially solve a problem of residual sand in the display substrate. The manufacturing method of the display substrate includes: providing a base; forming a passivation layer on a surface of the base; forming an amorphous oxide conductive material layer on a surface of the passivation layer facing away from the base; forming a photoresist pattern on the oxide conductive material layer, the photoresist pattern having an exposure region; etching a portion of the oxide conductive material layer in the exposure region of the photoresist pattern to form a hollow position exposing a portion of the passivation layer; and removing a certain thickness material of the portion of the passivation layer exposed through the hollow position.
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公开(公告)号：US11093084B2
公开(公告)日：2021-08-17
申请号：US16081674
申请日：2017-11-28
发明人： Xinyang Tang , Tao Jiang , Ling Han , Tao Ma
IPC分类号： G06F3/042 , G06F3/041 , G06F3/0354
摘要： The present application discloses a display substrate. The display substrate includes a base substrate; a first sensing layer having a plurality of first sensing electrodes extending substantially along a first direction; and a second sensing layer insulated from the first sensing layer and having a plurality of second sensing electrodes extending substantially along a second direction. Each of the plurality of first sensing electrodes includes a pair of first sub-electrodes substantially parallel to each other and extending substantially along the first direction, and a plurality of first photoconductive bridges each of which interposed between the pair of first sub-electrodes. Each of the plurality of second sensing electrodes includes a pair of second sub-electrodes substantially parallel to each other and extending substantially along the second direction, and a plurality of second photoconductive bridges each of which interposed between the pair of second sub-electrodes.
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