公开(公告)号：US11309406B2

公开(公告)日：2022-04-19

申请号：US16770362

申请日：2018-12-05

Applicant: CSMC TECHNOLOGIES FAB2 CO., LTD.

Inventor： Nailong He ,  Sen Zhang ,  Guangsheng Zhang ,  Yun Lan

IPC: H01L29/66 ,  H01L21/762 ,  H01L29/417 ,  H01L21/033 ,  H01L29/06 ,  H01L29/78 ,  H01L29/423

Abstract: A manufacturing method of an LDMOS device comprises: obtaining a wafer formed with a doped region having a first conductivity type, wherein a top buried layer is formed inside the doped region having the first conductivity type, and a field oxide insulation layer structure is formed on the top buried layer; disposing a trench on the doped region having the first conductivity type, wherein the trench extends to the top buried layer and the field oxide insulation layer structure such that a portion of the top buried layer is removed; injecting an ion of a second conductivity type to form a well region below the trench; and forming a doped source region in the well region. The first conductivity type and the second conductivity type are opposite conductivity types.

公开(公告)号：US12230693B2

公开(公告)日：2025-02-18

申请号：US17765295

申请日：2020-08-18

Applicant: CSMC TECHNOLOGIES FAB2 CO., LTD.

Inventor： Nailong He ,  Sen Zhang

IPC: H01L21/00 ,  H01L21/04 ,  H01L21/762 ,  H01L29/66 ,  H01L29/78 ,  H01L29/08

Abstract: A semiconductor device and a manufacturing method therefor. The semiconductor device comprises: a semiconductor substrate. A first drift region is formed in the semiconductor substrate. A gate structure is formed on the semiconductor substrate A part of the gate structure covers a part of the first drift region. A first trench is formed in the first drift region, and a drain region is formed in the semiconductor substrate at the bottom of the first trench.

公开(公告)号：US12154983B2

公开(公告)日：2024-11-26

申请号：US17639359

申请日：2020-05-26

Applicant: CSMC TECHNOLOGIES FAB2 CO., LTD.

Inventor： Nailong He

IPC: H01L29/78 ,  H01L21/265 ,  H01L21/266 ,  H01L29/66

Abstract: The present disclosure provides a lateral double-diffused metal oxide semiconductor device and a manufacturing method thereof, and an electronic apparatus. The method includes: providing a semiconductor substrate, and forming a drift region and a body region in the semiconductor substrate; forming a drain region in the drift region, forming a source region in the body region, and forming, on the body region, a gate structure extending to the drift region; implanting ions of a first type, so as to form, at a bottom of the drift region, first ion implantation regions extending along a direction from the gate structure to the drain region; forming, above the first ion implantation regions, a plurality of mutually spaced deep trench structures and fin structures between adjacent ones of the deep trench structures; and implanting ions of a second type in the deep trench structures to form second ion implantation regions.

公开(公告)号：US11742423B2

公开(公告)日：2023-08-29

申请号：US17761510

申请日：2020-08-20

Applicant: SOUTHEAST UNIVERSITY ,  CSMC TECHNOLOGIES FAB2 CO., LTD.

Inventor： Jing Zhu ,  Guichuang Zhu ,  Nailong He ,  Sen Zhang ,  Shaohong Li ,  Weifeng Sun ,  Longxing Shi

IPC: H01L29/78 ,  H01L29/08 ,  H01L29/10

CPC classification number: H01L29/7824 ,  H01L29/086 ,  H01L29/0878 ,  H01L29/1095

Abstract: A laterally double-diffused metal oxide semiconductor device is provided, including: a drift region (3) having a first conductivity type; a first body region (10) disposed on the drift region (3) and having a second conductivity type, the first conductivity type and the second conductivity type being opposite conductivity types; a first conductivity type region (13) disposed in the first body region (10); a second body region (12) disposed in the first conductivity type region (13) and having the second conductivity type; a source region (11) disposed in the second body region (12) and having the first conductivity type; and a contact region (9) disposed in the first body region (10) and having the second conductivity type.