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    Forming method of liquid crystal layer using ink jet system
    5.
    发明申请
    Forming method of liquid crystal layer using ink jet system 有权
    使用喷墨系统形成液晶层的方法

    公开(公告)号：US20080166829A1

    公开(公告)日：2008-07-10

    申请号：US12007212

    申请日：2008-01-08

    申请人： Goe-Sung Chae ,  Jae-Kyun Lee ,  Yong-Sup Hwang

    发明人： Goe-Sung Chae ,  Jae-Kyun Lee ,  Yong-Sup Hwang

    IPC分类号： H01L21/70

    CPC分类号： G02F1/13458 ,  G02F1/1362 ,  G02F1/136213

    摘要： According to an embodiment, a fabrication method includes forming a gate line disposed along a first direction and a common line parallel to the gate line on a substrate, the gate and common lines spaced apart from each other, forming a gate insulating layer on the gate and common lines, forming a semiconductor layer on the gate insulating layer, forming a source electrode and a pixel electrode of transparent conductive material, the pixel electrode including a drain electrode portion, the drain electrode portion overlapping the semiconductor layer, forming a passivation layer including a first contact hole and an open portion, the first contact hole exposing the source electrode and the open portion exposing the pixel electrode, respectively, and forming a data line disposed along a second direction on the passivation layer, the data line connected to the source electrode through the first contact hole and crossing the gate line.

    摘要翻译： 根据实施例，制造方法包括：形成沿着第一方向设置的栅极线和与基板上的栅极线平行的公共线，栅极和公共线彼此间隔开，在栅极上形成栅极绝缘层 和公共线，在栅极绝缘层上形成半导体层，形成透明导电材料的源电极和像素电极，所述像素电极包括漏电极部分，所述漏电极部分与所述半导体层重叠，形成钝化层，所述钝化层包括 第一接触孔和开口部分，所述第一接触孔分别暴露所述源极电极和所述开放部分，暴露所述像素电极，并且形成沿所述钝化层沿着第二方向布置的数据线，所述数据线连接到所述源极 电极通过第一接触孔并与栅极线交叉。

    Method for fabricating isolation layer in semiconductor device
    6.
    发明申请
    Method for fabricating isolation layer in semiconductor device 有权
    在半导体器件中制造隔离层的方法

    公开(公告)号：US20080160718A1

    公开(公告)日：2008-07-03

    申请号：US12004240

    申请日：2007-12-18

    申请人： Hae-Jung Lee ,  Hyun-Sik Park ,  Jae-Kyun Lee

    发明人： Hae-Jung Lee ,  Hyun-Sik Park ,  Jae-Kyun Lee

    IPC分类号： H01L21/762

    CPC分类号： H01L21/76232

    摘要： A method for fabricating an isolation layer in a semiconductor device includes providing a substrate, forming a trench over the substrate, forming a liner nitride layer and a liner oxide layer along a surface of the trench, forming an insulation layer having an etch selectivity ratio different from that of the liner oxide layer over the liner oxide layer, forming a spin on dielectric (SOD) oxide layer to fill a portion of the trench over the insulation layer, and forming a high density plasma (HDP) oxide layer for filling the remaining a portion of the trench.

    摘要翻译： 在半导体器件中制造隔离层的方法包括：提供衬底，在衬底上形成沟槽，沿着沟槽的表面形成衬里氮化物层和衬垫氧化物层，形成具有不同蚀刻选择比的绝缘层 与衬垫氧化物层上的衬垫氧化物层的衬垫氧化物层的形成自旋在电介质（SOD）氧化物层上形成，以填充绝缘层上的一部分沟槽，并形成高密度等离子体（HDP）氧化物层，用于填充剩余的 一部分沟槽。

    Semiconductor device for a thin film transistor
    7.
    发明授权
    Semiconductor device for a thin film transistor 失效
    一种用于薄膜晶体管的半导体器件

    公开(公告)号：US6107640A

    公开(公告)日：2000-08-22

    申请号：US832692

    申请日：1997-04-11

    申请人： Jae-Yong Park ,  Jae-Kyun Lee ,  Jung-Hoan Kim

    发明人： Jae-Yong Park ,  Jae-Kyun Lee ,  Jung-Hoan Kim

    IPC分类号： B60R21/00 ,  H01L21/31 ,  H01L21/336 ,  H01L29/786 ,  H01L29/04 ,  H01L27/01

    CPC分类号： H01L29/66765 ,  H01L29/78618

    摘要： A semiconductor device for a TFT includes a first semiconductor layer to be used as a channel, which is formed on a portion of an insulating layer in correspondence with an underlying gate electrode. The semiconductor device further includes a second semiconductor layer, an ohmic contact layer, and a metal layer formed on the insulating layer and the first semiconductor layer and patterned to expose portions of the insulating layer and the first semiconductor layer. The patterned metal layer forms source and drain electrodes. The semiconductor device also includes a passivation layer, which covers the insulating layer, the first semiconductor layer and the source and drain electrodes, and a pixel electrode, which contacts the drain electrode though a contact hole in the passivation layer.

    摘要翻译： 用于TFT的半导体器件包括用作沟道的第一半导体层，其形成在与下面的栅电极对应的绝缘层的一部分上。 半导体器件还包括形成在绝缘层和第一半导体层上的第二半导体层，欧姆接触层和金属层，并被图案化以暴露绝缘层和第一半导体层的部分。 图案化金属层形成源极和漏极。 半导体器件还包括覆盖绝缘层，第一半导体层和源极和漏极的钝化层和通过钝化层中的接触孔接触漏电极的像素电极。

    Active matrix liquid crystal display and related method
    8.
    发明授权
    Active matrix liquid crystal display and related method 失效
    有源矩阵液晶显示及相关方法

    公开(公告)号：US5990998A

    公开(公告)日：1999-11-23

    申请号：US829121

    申请日：1997-04-10

    申请人： Jae-Yong Park ,  Jae-Kyun Lee ,  Jung-Hoan Kim ,  Ki-Hyun Lyu ,  Kyu-Hyun Lee

    发明人： Jae-Yong Park ,  Jae-Kyun Lee ,  Jung-Hoan Kim ,  Ki-Hyun Lyu ,  Kyu-Hyun Lee

    IPC分类号： G02F1/133 ,  G02F1/1362 ,  G02F1/136 ,  G02F1/1343

    CPC分类号： G02F1/136213 ,  G02F1/136286

    摘要： A method of manufacturing an active matrix LCD is disclosed whereby gate bus lines, gate electrodes and source bus line segments are patterned from the same vacuum deposited first metal layer. An insulating layer, semiconductor layer, extrinsic semiconductor layer and second metal layer are then successively deposited on the substrate. A TFT channel region is formed by etching each of these layers in a second patterning process. During this step, storage capacitors may be formed by patterning the second metal layer so that it overlaps part of the gate bus lines. A transparent conductive layer is next deposited on the substrate. Pixel electrodes are then formed by patterning the transparent conductive layer in a third patterning process. Further, using a portion of the transparent conductive layer as a mask, the second metal layer and part of the extrinsic semiconductor layer are etched to form source and drain electrodes. Additionally, the transparent conductive layer can be patterned to provide an electrical connection between adjacent bus line segments to form a plurality of electrically continuous source bus lines.

    摘要翻译： 公开了一种制造有源矩阵LCD的方法，其中栅极总线，栅电极和源极总线段被从相同的真空沉积的第一金属层图案化。 然后将绝缘层，半导体层，非本征半导体层和第二金属层依次沉积在基板上。 通过在第二图案化工艺中蚀刻这些层中的每一层来形成TFT沟道区。 在该步骤期间，可以通过对第二金属层进行图案化以使其与栅极总线的一部分重叠而形成存储电容器。 接着在衬底上沉积透明导电层。 然后通过在第三图案化工艺中图案化透明导电层来形成像素电极。 此外，使用透明导电层的一部分作为掩模，蚀刻第二金属层和非本征半导体层的一部分以形成源极和漏极。 另外，透明导电层可被图案化以在相邻的总线段之间提供电连接，以形成多个电连续的源极总线。

    Array substrate for reflective type or transflective type liquid crystal display device and method of fabricating the same
    9.
    发明授权
    Array substrate for reflective type or transflective type liquid crystal display device and method of fabricating the same 有权
    反射式或半透射型液晶显示装置用阵列基板及其制造方法

    公开(公告)号：US08735187B2

    公开(公告)日：2014-05-27

    申请号：US13100771

    申请日：2011-05-04

    申请人： Jae-Kyun Lee ,  Jae-Young Oh

    发明人： Jae-Kyun Lee ,  Jae-Young Oh

    IPC分类号： H01L21/00

    CPC分类号： H01L27/1255 ,  G02F1/133553 ,  G02F1/133555 ,  H01L27/12 ,  H01L27/1248

    摘要： An array substrate for a liquid crystal display device includes a substrate, a gate line and a data line on the substrate and crossing each other to define a pixel region, a thin film transistor connected to the gate line and the data line, a first passivation layer on the thin film transistor and having a first unevenness structure at its top surface, an auxiliary unevenness layer on the first passivation layer and having a first roughness structure at its top surface, and a reflector on the auxiliary unevenness layer, the reflector having a second unevenness structure due to the first unevenness structure of the first passivation layer and a second roughness structure due to the first roughness structure of the auxiliary unevenness layer, the second roughness structure having smaller patterns than the second unevenness structure.

    摘要翻译： 用于液晶显示装置的阵列基板包括基板，栅极线和数据线，并且彼此交叉以形成像素区域，连接到栅极线和数据线的薄膜晶体管，第一钝化层 并且在其顶表面具有第一不均匀结构，在第一钝化层上具有辅助凹凸层，并且在其顶表面具有第一粗糙结构，在辅助凹凸层上具有反射器，反射器具有 由于第一钝化层的第一不均匀结构引起的第二不均匀结构和由于辅助凹凸层的第一粗糙结构引起的第二粗糙结构，所述第二粗糙结构具有比第二凹凸结构更小的图案。

    Array substrate for in-plane switching mode liquid crystal display device and method for fabricating the same
    10.
    发明授权
    Array substrate for in-plane switching mode liquid crystal display device and method for fabricating the same 有权
    用于面内切换模式液晶显示装置的阵列基板及其制造方法

    公开(公告)号：US07116393B2

    公开(公告)日：2006-10-03

    申请号：US10442947

    申请日：2003-05-22

    申请人： Jae-Kyun Lee

    发明人： Jae-Kyun Lee

    IPC分类号： G02F1/13

    CPC分类号： G02F1/134363 ,  G02F2001/136218 ,  G02F2001/136263

    摘要： An array substrate device for a liquid crystal display device includes a substrate, a gate line extending along a first direction on the substrate, a data line extending along a second direction substantially perpendicular to the first direction on the substrate, a pixel region defined by a crossing of the gate and data lines, a common line extending along the first direction and spaced apart from the gate line, a common electrode having a plurality of first portions extended along the second direction from the common line to the pixel region, wherein the extended portion of the common electrode adjacent to the data line includes first and second extensions overlapping portions of the data line, a thin film transistor on the substrate at a crossing portion of the gate and data lines, the thin film transistor including source and drain electrodes, a pixel electrode extended from the drain electrode to the pixel region, and an auxiliary electrode connected to the extended portion of the common electrode adjacent to the data line.

    摘要翻译： 一种液晶显示装置的阵列基板装置，包括基板，沿基板的第一方向延伸的栅极线，沿着与基板的第一方向大致垂直的第二方向延伸的数据线，由 栅极和数据线的交叉，沿着第一方向延伸并与栅极线间隔开的公共线，具有沿着第二方向从公共线延伸到像素区域的多个第一部分的公共电极，其中延伸的 与数据线相邻的公共电极的部分包括数据线的重叠部分的第一和第二延伸部分，栅极和数据线的交叉部分处的衬底上的薄膜晶体管，包括源极和漏极的薄膜晶体管， 从漏电极延伸到像素区域的像素电极，以及连接到该延伸部分的辅助电极 公共电极与数据线相邻。