公开(公告)号：US20120228655A1

公开(公告)日：2012-09-13

申请号：US13351648

申请日：2012-01-17

申请人： Chen-Yen Lin ,  Yung-Ming Lin ,  Po-Chun Yeh ,  Jeng-Wei Yu ,  Chih-Ming Lai ,  Lung-Han Peng

发明人： Chen-Yen Lin ,  Yung-Ming Lin ,  Po-Chun Yeh ,  Jeng-Wei Yu ,  Chih-Ming Lai ,  Lung-Han Peng

IPC分类号： H01L33/58 ,  H01L33/42

CPC分类号： H01L33/20 ,  H01L33/0012 ,  H01L33/0062 ,  H01L2224/45139 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/00

摘要： A light emitting diode includes a substrate, a plurality of pillar structures, a filler structure, a transparent conductive layer, a first electrode, and a second electrode. These pillar structures are formed on the substrate. Each of the pillar structures includes a first type semiconductor layer, an active layer, and a second type semiconductor layer. The first type semiconductor layers are formed on the substrate. The pillar structures are electrically connected with each other through the first type semiconductor layers. The filler structure is formed between the pillar structures. The filler structure and the second type semiconductor layers of the pillar structures are covered with the transparent conductive layer. The first electrode is in contact with the transparent conductive layer. The second electrode is in contact with the first type semiconductor layer.

摘要翻译： 发光二极管包括基板，多个柱结构，填充结构，透明导电层，第一电极和第二电极。 这些柱结构形成在基板上。 每个柱结构包括第一类型半导体层，有源层和第二类型半导体层。 在基板上形成第一类型的半导体层。 柱结构通过第一类型半导体层彼此电连接。 填料结构形成在柱结构之间。 柱结构的填充结构和第二类型半导体层被透明导电层覆盖。 第一电极与透明导电层接触。 第二电极与第一类型半导体层接触。

公开(公告)号：US08487325B2

公开(公告)日：2013-07-16

申请号：US13351648

申请日：2012-01-17

申请人： Chen-Yen Lin ,  Yung-Ming Lin ,  Po-Chun Yeh ,  Jeng-Wei Yu ,  Chih-Ming Lai ,  Lung-Han Peng

发明人： Chen-Yen Lin ,  Yung-Ming Lin ,  Po-Chun Yeh ,  Jeng-Wei Yu ,  Chih-Ming Lai ,  Lung-Han Peng

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L33/20 ,  H01L33/0012 ,  H01L33/0062 ,  H01L2224/45139 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/00

摘要： A light emitting diode includes a substrate, a plurality of pillar structures, a filler structure, a transparent conductive layer, a first electrode, and a second electrode. These pillar structures are formed on the substrate. Each of the pillar structures includes a first type semiconductor layer, an active layer, and a second type semiconductor layer. The first type semiconductor layers are formed on the substrate. The pillar structures are electrically connected with each other through the first type semiconductor layers. The filler structure is formed between the pillar structures. The filler structure and the second type semiconductor layers of the pillar structures are covered with the transparent conductive layer. The first electrode is in contact with the transparent conductive layer. The second electrode is in contact with the first type semiconductor layer.

摘要翻译： 发光二极管包括基板，多个柱结构，填充结构，透明导电层，第一电极和第二电极。 这些柱结构形成在基板上。 每个柱结构包括第一类型半导体层，有源层和第二类型半导体层。 在基板上形成第一类型的半导体层。 柱结构通过第一类型半导体层彼此电连接。 填料结构形成在柱结构之间。 柱结构的填充结构和第二类型半导体层被透明导电层覆盖。 第一电极与透明导电层接触。 第二电极与第一类型半导体层接触。

公开(公告)号：US08587862B2

公开(公告)日：2013-11-19

申请号：US13218462

申请日：2011-08-26

申请人： Jiun-Wei Liou ,  Jun-Ying Li ,  Chih-Ming Lai ,  Chern-Lin Chen ,  Way-Seen Wang ,  Lung-Han Peng

发明人： Jiun-Wei Liou ,  Jun-Ying Li ,  Chih-Ming Lai ,  Chern-Lin Chen ,  Way-Seen Wang ,  Lung-Han Peng

IPC分类号： G02F1/37 ,  G02F1/35

CPC分类号： G02F1/37 ,  G02F1/3558 ,  G02F1/3775

摘要： A second-harmonic generation nonlinear frequency converter includes a nonlinear optical crystal. The nonlinear optical crystal includes a plurality of sections. The sections connect to each other in sequence, and each section has a phase different from others. Each of the phases includes a positive domain and a negative domain. Each of the sections includes a plurality of quasi-phase-matching structures. The quasi-phase-matching structures connect to each other in sequence and have the same phase in one section.

摘要翻译： 二次谐波发生非线性频率转换器包括非线性光学晶体。 非线性光学晶体包括多个部分。 这些部分依次相互连接，每个部分的阶段与其他部分不同。 每个相包括正域和负域。 每个部分包括多个准相位匹配结构。 准相位匹配结构依次相互连接，在一个部分中具有相同的相位。

公开(公告)号：US20110116519A1

公开(公告)日：2011-05-19

申请号：US12720162

申请日：2010-03-09

申请人： Lung-Han Peng ,  Chih-Ming Lai ,  I-Ning Hu ,  Ying-Yao Lai ,  Chu-Hsuan Haung

发明人： Lung-Han Peng ,  Chih-Ming Lai ,  I-Ning Hu ,  Ying-Yao Lai ,  Chu-Hsuan Haung

IPC分类号： H01S3/10

CPC分类号： H01S3/1083 ,  G02F1/3532 ,  G02F1/39 ,  G02F2001/3546 ,  G02F2001/3548

摘要： Provided are an apparatus and a method for converting laser energy, characterized by employing an optical parametric oscillator for converting light of a green laser wavelength into light of a blue or red laser wavelength via a phase matching structure, by means of a non-linear optical crystal having a one-dimensional quasi-phase matching structure with a single grating period under appropriately-controlled temperature conditions. The non-linear optical crystal with the single grating period facilitates optical parametric oscillation and second harmonic generation to thereby enable green-to-blue wavelength conversion with a slope efficiency greater than 20%. Under 400 mW green light pump laser action, a periodically poled LiTaO3 crystal with a crystal length of 15 mm and without a resistant reflective plating film on its end face is capable of outputting a blue light laser beam of 56 mW.

摘要翻译： 提供了一种用于转换激光能量的装置和方法，其特征在于采用光学参量振荡器，通过相位匹配结构，通过非线性光学器件将绿色激光波长的光转换成蓝色或红色激光波长的光 晶体具有在适当控制的温度条件下具有单个光栅周期的一维准相位匹配结构。 具有单光栅周期的非线性光学晶体便于光参量振荡和二次谐波产生，从而使得斜率效率大于20％的绿 - 蓝波长转换成为可能。 在400mW绿光泵浦激光作用下，晶体长度为15mm的周期极化的LiTaO3晶体在其端面上没有耐反射镀膜，能够输出56mW的蓝光激光束。

公开(公告)号：US10096544B2

公开(公告)日：2018-10-09

申请号：US13464055

申请日：2012-05-04

申请人： Chih-Ming Lai ,  Wen-Chun Huang ,  Ru-Gun Liu ,  Pi-Tsung Chen

发明人： Chih-Ming Lai ,  Wen-Chun Huang ,  Ru-Gun Liu ,  Pi-Tsung Chen

IPC分类号： H01L31/00 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532 ,  H01L21/768

摘要： The present disclosure provides an interconnect structure for a semiconductor device. The interconnect structure includes a first metal layer that contains a first metal line. The interconnect structure includes a dielectric layer located over the first metal layer. The dielectric layer contains a first sub-via electrically coupled to the first metal line and a second sub-via electrically coupled to the first sub-via. The second sub-via is different from the first sub-via. The interconnect structure includes a second metal layer located over the dielectric layer. The second metal layer contains a second metal line electrically coupled to the second sub-via. No other metal layer is located between the first metal layer and the second metal layer.

公开(公告)号：US08759186B2

公开(公告)日：2014-06-24

申请号：US13354334

申请日：2012-01-20

申请人： Yung-Hui Yeh ,  Chih-Ming Lai

发明人： Yung-Hui Yeh ,  Chih-Ming Lai

IPC分类号： H01L33/08

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L27/1248 ,  H01L29/66969

摘要： A method for manufacturing a semiconductor device includes forming a metal oxide semiconductor layer and a first insulating layer on a substrate. A gate is formed on the first insulating layer. The first insulating layer is patterned by using the gate as an etching mask so as to expose the metal oxide semiconductor layer to serve as a source region and a drain region. A dielectric layer is formed on the substrate to cover the gate and the oxide semiconductor layer, where the dielectric layer has at least one of hydrogen group and hydroxyl group. A heating treatment is performed so that the at least one of hydrogen group and hydroxyl group reacts with the source region and the drain region. A source electrode and a drain electrode electrically connected to the source region and the drain region respectively are formed on the dielectric layer.

摘要翻译： 一种制造半导体器件的方法包括在衬底上形成金属氧化物半导体层和第一绝缘层。 在第一绝缘层上形成栅极。 通过使用栅极作为蚀刻掩模来对第一绝缘层进行构图，以使金属氧化物半导体层暴露于源极区和漏极区。 在基板上形成介电层以覆盖栅极和氧化物半导体层，其中电介质层具有氢基和羟基中的至少一个。 进行加热处理，使得氢基和羟基中的至少一个与源极区和漏极区反应。 在电介质层上分别形成与源极区域和漏极区域电连接的源极电极和漏极电极。

公开(公告)号：US20130126859A1

公开(公告)日：2013-05-23

申请号：US13354334

申请日：2012-01-20

申请人： Yung-Hui Yeh ,  Chih-Ming Lai

发明人： Yung-Hui Yeh ,  Chih-Ming Lai

IPC分类号： H01L33/08 ,  H01L33/44

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L27/1248 ,  H01L29/66969

摘要： A method for manufacturing a semiconductor device includes forming a metal oxide semiconductor layer and a first insulating layer on a substrate. A gate is formed on the first insulating layer. The first insulating layer is patterned by using the gate as an etching mask so as to expose the metal oxide semiconductor layer to serve as a source region and a drain region. A dielectric layer is formed on the substrate to cover the gate and the oxide semiconductor layer, where the dielectric layer has at least one of hydrogen group and hydroxyl group. A heating treatment is performed so that the at least one of hydrogen group and hydroxyl group reacts with the source region and the drain region. A source electrode and a drain electrode electrically connected to the source region and the drain region respectively are formed on the dielectric layer.

摘要翻译： 一种制造半导体器件的方法包括在衬底上形成金属氧化物半导体层和第一绝缘层。 在第一绝缘层上形成栅极。 通过使用栅极作为蚀刻掩模来对第一绝缘层进行构图，以使金属氧化物半导体层暴露于源极区和漏极区。 在基板上形成介电层以覆盖栅极和氧化物半导体层，其中电介质层具有氢基和羟基中的至少一个。 进行加热处理，使得氢基和羟基中的至少一个与源极区和漏极区反应。 在电介质层上分别形成与源极区域和漏极区域电连接的源极电极和漏极电极。

公开(公告)号：US08350450B2

公开(公告)日：2013-01-08

申请号：US12749472

申请日：2010-03-29

申请人： Chih-Chung Tsao ,  Chih-Ming Lai ,  Yu-Pin Liu

发明人： Chih-Chung Tsao ,  Chih-Ming Lai ,  Yu-Pin Liu

IPC分类号： H01J61/42

CPC分类号： F21V29/004 ,  F21K9/232 ,  F21V29/78 ,  F21Y2107/20 ,  F21Y2115/10

摘要： An LED lamp includes a heat sink including a base having a heat-dissipating face, an LED module including a printed circuit board mounted on the base and a plurality of LEDs disposed on the printed circuit board, and a connecter electrically connecting the LED module to a power supply. The heat sink further includes a plurality of spiral fins protruding outwardly from the heat-dissipating face of the base.

摘要翻译： LED灯包括散热器，该散热器包括具有散热面的基座，包括安装在基座上的印刷电路板的LED模块和布置在印刷电路板上的多个LED，以及将LED模块电连接到 电源。 散热器还包括从基座的散热面向外突出的多个螺旋形翅片。

公开(公告)号：US08337053B2

公开(公告)日：2012-12-25

申请号：US12795821

申请日：2010-06-08

申请人： Tien-Pao Chen ,  Chih-Ming Lai

发明人： Tien-Pao Chen ,  Chih-Ming Lai

IPC分类号： F21V3/00

CPC分类号： F21V5/04 ,  F21V5/08 ,  F21W2131/103 ,  F21Y2115/10 ,  G02B19/0014 ,  G02B19/0061

摘要： A lens applied to a light emitting element includes a first surface profile and a second surface profile opposite to the first surface profile. The first surface profile defines a first trench facing the light emitting element, and the first trench includes a bottom curved surface serving as a light incident surface. The second surface profile includes a top curved surface, and serves as a light emitting surface. Both the bottom and the top curved surfaces are mirror symmetric to the first suppositional plane P1 (X=0), and mirror asymmetric to the second suppositional plane P2 (Y=0) to cooperatively adjust light from the light emitting element to obtain an asymmetric light field. An illumination device having the lens is further provided.

摘要翻译： 应用于发光元件的透镜包括第一表面轮廓和与第一表面轮廓相对的第二表面轮廓。 第一表面轮廓限定面向发光元件的第一沟槽，并且第一沟槽包括用作光入射表面的底部弯曲表面。 第二表面轮廓包括顶部曲面，并且用作发光表面。 底部和顶部曲面都与第一假想平面P1（X = 0）镜面对称，并且镜子不对称于第二假想平面P2（Y = 0），以协调地调节来自发光元件的光以获得不对称 光场。 还提供了具有透镜的照明装置。

公开(公告)号：US08246205B2

公开(公告)日：2012-08-21

申请号：US12889433

申请日：2010-09-24

申请人： Chih-Ming Lai

发明人： Chih-Ming Lai

IPC分类号： F21S4/00 ,  F21V21/00

CPC分类号： F21V23/0457 ,  F21K9/23 ,  F21Y2115/10 ,  H05B33/0854 ,  H05B37/0227

摘要： An LED light emitting device includes an LED light emitting component comprising a visible LED die emitting visible light and an infrared LED die emitting infrared light, a power source driver for providing electric energy for the LED light emitting component, and a temperature sensor for sensing a surface temperature of an outer surface of the LED light emitting component. When a value of the surface temperature is smaller than zero degree Celsius, the temperature sensor outputs a control signal to the power source driver to control the power source driver to supply an electric current to the infrared LED die, whereby the infrared LED die radiates infrared light to melt ice on the outer surface of the LED light emitting component.

摘要翻译： 一种LED发光装置，其特征在于，包括：LED发光部件，其包含发出可见光的可见LED芯片和发射红外光的红外LED芯片;用于为所述LED发光部件提供电能的电源驱动器;以及感测 LED发光部件的外表面的表面温度。 当表面温度的值小于零摄氏度时，温度传感器向电源驱动器输出控制信号，以控制电源驱动器向红外LED管芯提供电流，由此红外LED管芯辐射红外线 光在LED发光部件的外表面上融化冰。