公开(公告)号：US10141411B2

公开(公告)日：2018-11-27

申请号：US15435833

申请日：2017-02-17

Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA ,  DENSO CORPORATION

Inventor： Atsushi Onogi ,  Toru Onishi ,  Shuhei Mitani ,  Yusuke Yamashita ,  Katsuhiro Kutsuki

IPC: H01L29/16 ,  G01K7/01 ,  G01K7/02 ,  H01L27/07 ,  H01L29/78 ,  H01L27/24 ,  H01L29/66 ,  H01L27/02 ,  H01L29/10 ,  H01L29/08 ,  H01L23/34 ,  H01L29/739 ,  H01L29/861

Abstract: A semiconductor device includes a semiconductor substrate of silicon carbide, and a temperature sensor portion. The semiconductor substrate includes a portion in which an n-type drift region and a p-type body region are laminated. The temperature sensor portion is disposed in the semiconductor substrate and is separated from the drift region by the body region. The temperature sensor portion includes an n-type cathode region being in contact with the body region, and a p-type anode region separated from the body region by the cathode region.

公开(公告)号：US12205984B2

公开(公告)日：2025-01-21

申请号：US17829791

申请日：2022-06-01

Applicant: DENSO CORPORATION

Inventor： Jun Saito ,  Keita Kataoka ,  Yusuke Yamashita ,  Yukihiko Watanabe ,  Katsuhiro Kutsuki ,  Youngshin Eum

IPC: H01L29/06 ,  H01L29/739

Abstract: A semiconductor device includes a semiconductor substrate, a top electrode in contact with a top surface of the semiconductor substrate, a bottom electrode in contact with a bottom surface of the semiconductor substrate, and an oxide film in contact with the top surface of the semiconductor substrate. The semiconductor substrate includes an element region and an outer peripheral region. The element region is a region where the top electrode is in contact with the top surface of the semiconductor substrate. The outer peripheral region is a region where the oxide film is in contact with the top surface of the semiconductor substrate, and is located between the element region and an outer peripheral end surface of the semiconductor substrate. The element region includes a semiconductor element connected between the top electrode and the bottom electrode. The outer peripheral region includes surface high-voltage-breakdown regions, deep high-voltage-breakdown regions, and a drift region.

公开(公告)号：US10170470B2

公开(公告)日：2019-01-01

申请号：US15684057

申请日：2017-08-23

Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA ,  DENSO CORPORATION

Inventor： Toru Onishi ,  Katsuhiro Kutsuki ,  Yasushi Urakami ,  Yukihiko Watanabe

IPC: H01L29/78 ,  H01L29/06 ,  H01L27/088 ,  H01L29/423 ,  H01L29/16

Abstract: A switching device may include a semiconductor substrate; gate trenches; bottom insulating layers covering bottom surfaces of the gate trenches; gate insulating layers covering side surfaces of the gate trenches; and gate electrodes arranged in the gate trenches. The gate insulating layers in a center portion may have a first thickness and a first dielectric constant, and one or more of the gate insulating layers in a peripheral portion may have, within at least a part of the peripheral portion, a second thickness thicker than the first thickness and a second dielectric constant greater than the first dielectric constant. The semiconductor substrate may include a first region being in contact with the gate insulating layers, a body region being in contact with the gate insulating layers under the first region, and a second region being in contact with the gate insulating layers under the body region.

公开(公告)号：US11501971B2

公开(公告)日：2022-11-15

申请号：US16968706

申请日：2019-01-29

Applicant: DENSO CORPORATION

Inventor： Toru Onishi ,  Katsuhiro Kutsuki ,  Kensaku Yamamoto

IPC: H01L21/02 ,  H01L21/04 ,  H01L29/16 ,  H01L29/423 ,  H01L29/51 ,  H01L29/66 ,  H01L29/78

Abstract: A manufacturing method of a silicon carbide semiconductor device may include: forming a gate insulating film on a silicon carbide substrate; and forming a gate electrode on the gate insulating film. The forming of the gate insulating film may include forming an oxide film on the silicon carbide substrate by thermally oxidizing the silicon carbide substrate under a nitrogen atmosphere.