公开(公告)号：US09294050B2

公开(公告)日：2016-03-22

申请号：US14034081

申请日：2013-09-23

Applicant: DSP Group, Ltd.

Inventor： Alexander Mostov ,  Yaron Hasson

IPC: H03F1/56 ,  H01F38/14 ,  H03F3/213 ,  H03F3/195 ,  H02M3/04 ,  H01F27/28 ,  H01F27/29 ,  H01F38/00 ,  H03F3/19 ,  H03F3/21 ,  H03F3/68 ,  H03F3/193 ,  H04B1/44 ,  H01F19/04 ,  H03F1/02 ,  H03F3/45

CPC classification number: H03F1/565 ,  H01F19/04 ,  H01F27/2804 ,  H01F27/29 ,  H01F38/00 ,  H01F38/14 ,  H01L23/5227 ,  H01L23/645 ,  H01L23/66 ,  H01L2223/6655 ,  H01L2223/6672 ,  H01L2924/0002 ,  H02M3/04 ,  H02M3/1563 ,  H02M2001/0012 ,  H03F1/0227 ,  H03F1/0261 ,  H03F3/19 ,  H03F3/193 ,  H03F3/195 ,  H03F3/21 ,  H03F3/211 ,  H03F3/213 ,  H03F3/45179 ,  H03F3/68 ,  H03F2200/102 ,  H03F2200/105 ,  H03F2200/387 ,  H03F2200/451 ,  H03F2200/534 ,  H03F2200/537 ,  H03F2200/541 ,  H04B1/44 ,  Y02D70/00 ,  H01L2924/00

Abstract: A novel and useful radio frequency (RF) front end module (FEM) circuit that provides high linearity and power efficiency and meets the requirements of modern wireless communication standards such as 802.11 WLAN, 3G and 4G cellular standards, Bluetooth, ZigBee, etc. The configuration of the FEM circuit permits the use of common, relatively low cost semiconductor fabrication techniques such as standard CMOS processes. The FEM circuit includes a power amplifier made up of one or more sub-amplifiers having high and low power circuits and whose outputs are combined to yield the total desired power gain. An integrated multi-tap transformer having primary and secondary windings arranged in a novel configuration provide efficient power combining and transfer to the antenna of the power generated by the individual sub-amplifiers.

Abstract translation: 一种新颖有用的射频（RF）前端模块（FEM）电路，提供高线性度和功率效率，并满足现代无线通信标准（如802.11 WLAN，3G和4G蜂窝标准，蓝牙，ZigBee等）的要求。 有限元电路的配置允许使用常见的，相对低成本的半导体制造技术，例如标准CMOS工艺。 FEM电路包括由具有高功率电路和低功率电路的一个或多个子放大器组成的功率放大器，并且其输出被组合以产生总的期望功率增益。 具有以新颖配置布置的初级和次级绕组的集成多抽头变压器提供了由各个子放大器产生的功率的有效功率组合和传输到天线。

公开(公告)号：US20140087673A1

公开(公告)日：2014-03-27

申请号：US14034175

申请日：2013-09-23

Applicant: DSP Group, Ltd.

Inventor： Alexander Mostov ,  Yaron Hasson ,  Ron Pongratz

IPC: H04B1/44

CPC classification number: H03F1/565 ,  H01F19/04 ,  H01F27/2804 ,  H01F27/29 ,  H01F38/00 ,  H01F38/14 ,  H01L23/5227 ,  H01L23/645 ,  H01L23/66 ,  H01L2223/6655 ,  H01L2223/6672 ,  H01L2924/0002 ,  H02M3/04 ,  H02M3/1563 ,  H02M2001/0012 ,  H03F1/0227 ,  H03F1/0261 ,  H03F3/19 ,  H03F3/193 ,  H03F3/195 ,  H03F3/21 ,  H03F3/211 ,  H03F3/213 ,  H03F3/45179 ,  H03F3/68 ,  H03F2200/102 ,  H03F2200/105 ,  H03F2200/387 ,  H03F2200/451 ,  H03F2200/534 ,  H03F2200/537 ,  H03F2200/541 ,  H04B1/44 ,  Y02D70/00 ,  H01L2924/00

Abstract: A novel and useful radio frequency (RF) front end module (FEM) circuit that provides high linearity and power efficiency and meets the requirements of modern wireless communication standards such as 802.11 WLAN, 3G and 4G cellular standards, Bluetooth, ZigBee, etc. The configuration of the FEM circuit permits the use of common, relatively low cost semiconductor fabrication techniques such as standard CMOS processes. The FEM circuit includes a power amplifier made up of one or more sub-amplifiers having high and low power circuits and whose outputs are combined to yield the total desired power gain. An integrated multi-tap transformer having primary and secondary windings arranged in a novel configuration provide efficient power combining and transfer to the antenna of the power generated by the individual sub-amplifiers.

Abstract translation: 一种新颖有用的射频（RF）前端模块（FEM）电路，提供高线性度和功率效率，并满足现代无线通信标准（如802.11 WLAN，3G和4G蜂窝标准，蓝牙，ZigBee等）的要求。 有限元电路的配置允许使用常见的，相对低成本的半导体制造技术，例如标准CMOS工艺。 FEM电路包括由具有高功率电路和低功率电路的一个或多个子放大器组成的功率放大器，并且其输出被组合以产生总的期望功率增益。 具有以新颖配置布置的初级和次级绕组的集成多抽头变压器提供了由各个子放大器产生的功率的有效功率组合和传输到天线。

公开(公告)号：US09312820B2

公开(公告)日：2016-04-12

申请号：US14034175

申请日：2013-09-23

Applicant: DSP Group, LTD.

Inventor： Alexander Mostov ,  Yaron Hasson ,  Ron Pongratz ,  Sharon Betzalel

IPC: H04B1/44 ,  H04B1/00 ,  H04B1/38 ,  H03F1/56 ,  H01F38/14 ,  H03F3/213 ,  H03F3/195 ,  H02M3/04 ,  H01F27/28 ,  H01F27/29 ,  H01F38/00 ,  H03F3/19 ,  H03F3/21 ,  H03F3/68 ,  H03F3/193 ,  H01F19/04 ,  H03F1/02 ,  H03F3/45

CPC classification number: H03F1/565 ,  H01F19/04 ,  H01F27/2804 ,  H01F27/29 ,  H01F38/00 ,  H01F38/14 ,  H01L23/5227 ,  H01L23/645 ,  H01L23/66 ,  H01L2223/6655 ,  H01L2223/6672 ,  H01L2924/0002 ,  H02M3/04 ,  H02M3/1563 ,  H02M2001/0012 ,  H03F1/0227 ,  H03F1/0261 ,  H03F3/19 ,  H03F3/193 ,  H03F3/195 ,  H03F3/21 ,  H03F3/211 ,  H03F3/213 ,  H03F3/45179 ,  H03F3/68 ,  H03F2200/102 ,  H03F2200/105 ,  H03F2200/387 ,  H03F2200/451 ,  H03F2200/534 ,  H03F2200/537 ,  H03F2200/541 ,  H04B1/44 ,  Y02D70/00 ,  H01L2924/00

Abstract: A novel and useful radio frequency (RF) front end module (FEM) circuit that provides high linearity and power efficiency and meets the requirements of modern wireless communication standards such as 802.11 WLAN, 3G and 4G cellular standards, Bluetooth, ZigBee, etc. The configuration of the FEM circuit permits the use of common, relatively low cost semiconductor fabrication techniques such as standard CMOS processes. The FEM circuit includes a power amplifier made up of one or more sub-amplifiers having high and low power circuits and whose outputs are combined to yield the total desired power gain. An integrated multi-tap transformer having primary and secondary windings arranged in a novel configuration provide efficient power combining and transfer to the antenna of the power generated by the individual sub-amplifiers.

Abstract translation: 一种新颖有用的射频（RF）前端模块（FEM）电路，提供高线性度和功率效率，并满足现代无线通信标准（如802.11 WLAN，3G和4G蜂窝标准，蓝牙，ZigBee等）的要求。 有限元电路的配置允许使用常见的，相对低成本的半导体制造技术，例如标准CMOS工艺。 FEM电路包括由具有高功率电路和低功率电路的一个或多个子放大器组成的功率放大器，并且其输出被组合以产生总的期望功率增益。 具有以新颖配置布置的初级和次级绕组的集成多抽头变压器提供了由各个子放大器产生的功率的有效功率组合和传输到天线。

公开(公告)号：US20140087672A1

公开(公告)日：2014-03-27

申请号：US14034081

申请日：2013-09-23

Applicant: DSP Group, Ltd.

Inventor： Alexander Mostov ,  Yaron Hasson

IPC: H04B1/44

CPC classification number: H03F1/565 ,  H01F19/04 ,  H01F27/2804 ,  H01F27/29 ,  H01F38/00 ,  H01F38/14 ,  H01L23/5227 ,  H01L23/645 ,  H01L23/66 ,  H01L2223/6655 ,  H01L2223/6672 ,  H01L2924/0002 ,  H02M3/04 ,  H02M3/1563 ,  H02M2001/0012 ,  H03F1/0227 ,  H03F1/0261 ,  H03F3/19 ,  H03F3/193 ,  H03F3/195 ,  H03F3/21 ,  H03F3/211 ,  H03F3/213 ,  H03F3/45179 ,  H03F3/68 ,  H03F2200/102 ,  H03F2200/105 ,  H03F2200/387 ,  H03F2200/451 ,  H03F2200/534 ,  H03F2200/537 ,  H03F2200/541 ,  H04B1/44 ,  Y02D70/00 ,  H01L2924/00

Abstract: A novel and useful radio frequency (RF) front end module (FEM) circuit that provides high linearity and power efficiency and meets the requirements of modern wireless communication standards such as 802.11 WLAN, 3G and 4G cellular standards, Bluetooth, ZigBee, etc. The configuration of the FEM circuit permits the use of common, relatively low cost semiconductor fabrication techniques such as standard CMOS processes. The FEM circuit includes a power amplifier made up of one or more sub-amplifiers having high and low power circuits and whose outputs are combined to yield the total desired power gain. An integrated multi-tap transformer having primary and secondary windings arranged in a novel configuration provide efficient power combining and transfer to the antenna of the power generated by the individual sub-amplifiers.

Abstract translation: 一种新颖有用的射频（RF）前端模块（FEM）电路，提供高线性度和功率效率，并满足现代无线通信标准（如802.11 WLAN，3G和4G蜂窝标准，蓝牙，ZigBee等）的要求。 有限元电路的配置允许使用常见的，相对低成本的半导体制造技术，例如标准CMOS工艺。 FEM电路包括由具有高功率电路和低功率电路的一个或多个子放大器组成的功率放大器，并且其输出被组合以产生总的期望功率增益。 具有以新颖配置布置的初级和次级绕组的集成多抽头变压器提供了由各个子放大器产生的功率的有效功率组合和传输到天线。

公开(公告)号：US20130252562A1

公开(公告)日：2013-09-26

申请号：US13836698

申请日：2013-03-15

Applicant: DSP Group, Ltd.

Inventor： Yaron Hasson ,  Alex Mostov

IPC: H04B1/44

CPC classification number: H04B1/44

Abstract: A novel and useful RF switch that comprises four transistors configured to have four operating states, wherein at any time at most one transistor is in ‘on’ state. The switch is an on-chip switch and is constructed in using CMOS processes and technology. The switch is optionally a double pole, double throw (DPDT) switch. The switch can be used in numerous mobile devices such as a cellular phone or in the handset or base station of a cordless phone. The switch optionally selects between two antennas and between transmitter and receiver circuits. Within the switch, at least one of the at least four transistors is optionally an N-channel Metal Oxide Semiconductor (NMOS) transistor. The switch can further comprise one or more logic control circuits providing biasing voltages to one or more of the transistors. Within the switch, the control circuit comprises logic components for providing appropriate biasing voltages to the drain, source and gate terminals of the transistors in the switch.

Abstract translation: 一种新颖且有用的RF开关，其包括配置成具有四个工作状态的四个晶体管，其中在任何时间至多一个晶体管处于“导通”状态。 该开关是片上开关，采用CMOS工艺和技术构建。 该开关可选择是双极双掷（DPDT）开关。 该交换机可以用于许多移动设备，例如蜂窝电话或无绳电话的手机或基站中。 该交换机可选择在两个天线之间以及发射机和接收机之间进行选择。 在开关内，至少四个晶体管中的至少一个晶体管可选地是N沟道金属氧化物半导体（NMOS）晶体管。 开关还可以包括向一个或多个晶体管提供偏置电压的一个或多个逻辑控制电路。 在开关内，控制电路包括用于向开关中的晶体管的漏极，源极和栅极端子提供适当偏置电压的逻辑部件。