公开(公告)号：US07279435B2

公开(公告)日：2007-10-09

申请号：US10933890

申请日：2004-09-02

申请人： Daniel F. Gealy ,  Dave Chapek ,  Scott DeBoer ,  Husam N. Al-Shareef ,  Randhir Thakur

发明人： Daniel F. Gealy ,  Dave Chapek ,  Scott DeBoer ,  Husam N. Al-Shareef ,  Randhir Thakur

IPC分类号： H01L21/469 ,  H01L21/42

CPC分类号： H01L21/28202 ,  C30B33/005 ,  H01L21/02183 ,  H01L21/02197 ,  H01L21/02271 ,  H01L21/31662 ,  H01L29/518 ,  Y10S438/903

摘要： A method and apparatus for preventing N2O from becoming super critical during a high pressure oxidation stage within a high pressure oxidation furnace are disclosed. The method and apparatus utilize a catalyst to catalytically disassociate N2O as it enters the high pressure oxidation furnace. This catalyst is used in an environment of between five (5) atmospheres to twenty-five (25) atmospheres N2O and a temperature range of 600° C. to 750° C., which are the conditions that lead to the N2O going super critical. By preventing the N2O from becoming super critical, the reaction is controlled that prevents both temperature and pressure spikes. The catalyst can be selected from the group of noble transition metals and their oxides. This group can comprise palladium, platinum, iridium, rhodium, nickel, silver, and gold.

摘要翻译： 公开了一种在高压氧化炉内的高压氧化阶段防止N 2 O变得超临界的方法和装置。 该方法和装置利用催化剂在进入高压氧化炉时催化分解N 2 O 2。 该催化剂用于五（5）大气压至二十五（25）个大气压N 2 O的环境和600℃至750℃的温度范围内，这是 导致N＆lt; 2＆gt; O超越关键的条件。 通过防止N 2 O 2变得超临界，控制反应以防止温度和压力尖峰。 催化剂可以选自贵金属过渡金属及其氧化物。 该组可以包括钯，铂，铱，铑，镍，银和金。

公开(公告)号：US08673390B2

公开(公告)日：2014-03-18

申请号：US13614854

申请日：2012-09-13

申请人： Vishwanath Bhat ,  Rishikesh Krishnan ,  Daniel F. Gealy

发明人： Vishwanath Bhat ,  Rishikesh Krishnan ,  Daniel F. Gealy

IPC分类号： B05D5/12 ,  B05D3/00 ,  C23C16/00

CPC分类号： C23C16/405 ,  C30B25/02 ,  C30B29/16 ,  H01G4/33 ,  H01G9/0032 ,  H01L28/65

摘要： There is disclosed a method of forming crystalline tantalum pentoxide on a ruthenium-containing material having an oxygen-containing surface wherein the oxygen-containing surface is contacted with a treating composition, such as water, to remove at least some oxygen. Crystalline tantalum pentoxide is formed on at least a portion of the surface having reduced oxygen content.

摘要翻译： 公开了在具有含氧表面的含钌材料上形成结晶五氧化钽的方法，其中含氧表面与处理组合物如水接触以除去至少一些氧。 在具有降低的氧含量的表面的至少一部分上形成五氧化二钽结晶。

公开(公告)号：US08282988B2

公开(公告)日：2012-10-09

申请号：US13210836

申请日：2011-08-16

申请人： Vishwanath Bhat ,  Rishikesh Krishnan ,  Daniel F. Gealy

发明人： Vishwanath Bhat ,  Rishikesh Krishnan ,  Daniel F. Gealy

IPC分类号： B05D5/12 ,  C23C16/00

CPC分类号： C23C16/405 ,  C30B25/02 ,  C30B29/16 ,  H01G4/33 ,  H01G9/0032 ,  H01L28/65

摘要： There is disclosed a method of forming crystalline tantalum pentoxide on a ruthenium-containing material having an oxygen-containing surface wherein the oxygen-containing surface is contacted with a treating composition, such as water, to remove at least some oxygen. Crystalline tantalum pentoxide is formed on at least a portion of the surface having reduced oxygen content.

摘要翻译： 公开了在具有含氧表面的含钌材料上形成结晶五氧化钽的方法，其中含氧表面与处理组合物如水接触以除去至少一些氧。 在具有降低的氧含量的表面的至少一部分上形成五氧化二钽结晶。

公开(公告)号：US06522570B1

公开(公告)日：2003-02-18

申请号：US10022036

申请日：2001-12-13

申请人： Cem Basceri ,  Daniel F. Gealy

发明人： Cem Basceri ,  Daniel F. Gealy

IPC分类号： G11C1122

CPC分类号： G11C11/22

摘要： A system and method for inhibiting the imprinting of capacitor structures employed by memory cells by occasionally changing charge states of the capacitors to a complementary charge state.

摘要翻译： 一种用于通过偶尔将电容器的电荷状态改变为互补电荷状态来抑制存储器单元采用的电容器结构的压印的系统和方法。