Apparatus for stabilizing high pressure oxidation of a semiconductor device
    1.
    发明授权
    Apparatus for stabilizing high pressure oxidation of a semiconductor device 有权
    用于稳定半导体器件的高压氧化的装置

    公开(公告)号:US07279435B2

    公开(公告)日:2007-10-09

    申请号:US10933890

    申请日:2004-09-02

    IPC分类号: H01L21/469 H01L21/42

    摘要: A method and apparatus for preventing N2O from becoming super critical during a high pressure oxidation stage within a high pressure oxidation furnace are disclosed. The method and apparatus utilize a catalyst to catalytically disassociate N2O as it enters the high pressure oxidation furnace. This catalyst is used in an environment of between five (5) atmospheres to twenty-five (25) atmospheres N2O and a temperature range of 600° C. to 750° C., which are the conditions that lead to the N2O going super critical. By preventing the N2O from becoming super critical, the reaction is controlled that prevents both temperature and pressure spikes. The catalyst can be selected from the group of noble transition metals and their oxides. This group can comprise palladium, platinum, iridium, rhodium, nickel, silver, and gold.

    摘要翻译: 公开了一种在高压氧化炉内的高压氧化阶段防止N 2 O变得超临界的方法和装置。 该方法和装置利用催化剂在进入高压氧化炉时催化分解N 2 O 2。 该催化剂用于五(5)大气压至二十五(25)个大气压N 2 O的环境和600℃至750℃的温度范围内,这是 导致N< 2> O超越关键的条件。 通过防止N 2 O 2变得超临界,控制反应以防止温度和压力尖峰。 催化剂可以选自贵金属过渡金属及其氧化物。 该组可以包括钯,铂,铱,铑,镍,银和金。

    System and method for inhibiting imprinting of capacitor structures of a memory
    4.
    发明授权
    System and method for inhibiting imprinting of capacitor structures of a memory 有权
    用于抑制存储器的电容器结构的印记的系统和方法

    公开(公告)号:US06522570B1

    公开(公告)日:2003-02-18

    申请号:US10022036

    申请日:2001-12-13

    IPC分类号: G11C1122

    CPC分类号: G11C11/22

    摘要: A system and method for inhibiting the imprinting of capacitor structures employed by memory cells by occasionally changing charge states of the capacitors to a complementary charge state.

    摘要翻译: 一种用于通过偶尔将电容器的电荷状态改变为互补电荷状态来抑制存储器单元采用的电容器结构的压印的系统和方法。