公开(公告)号：US08558281B1

公开(公告)日：2013-10-15

申请号：US13310473

申请日：2011-12-02

申请人： Dean C. Regan ,  Keisuke Shinohara ,  Andrea Corrion ,  Ivan Milosavljevic ,  Miroslav Micovic ,  Peter J. Willadsen ,  Colleen M. Butler ,  Hector L. Bracamontes ,  Bruce T. Holden ,  David T. Chang

发明人： Dean C. Regan ,  Keisuke Shinohara ,  Andrea Corrion ,  Ivan Milosavljevic ,  Miroslav Micovic ,  Peter J. Willadsen ,  Colleen M. Butler ,  Hector L. Bracamontes ,  Bruce T. Holden ,  David T. Chang

IPC分类号： H01L29/205

CPC分类号： H01L29/42316 ,  H01L29/2003 ,  H01L29/517 ,  H01L29/66462

摘要： A method for fabricating a gate structure for a field effect transistor having a buffer layer on a substrate, a channel layer and a barrier layer over the channel layer includes forming a gate including silicon, forming first sidewalls of a first material on either side and adjacent to the gate, selectively etching into the buffer layer to form a mesa for the field effect transistor, depositing a material layer over the mesa, planarizing the material layer over the mesa to form a planarized surface such that a top of the gate, tops of the first sidewalls, and a top of the material layer over the mesa are on the same planarized surface, depositing metal on the planzarized surface, annealing to form the gate into a metal silicided gate, and etching to remove excess non-silicided metal.

摘要翻译： 一种制造用于场效应晶体管的栅极结构的方法，该场效应晶体管在衬底上具有缓冲层，沟道层上的沟道层和势垒层包括形成包含硅的栅极，在任一侧和相邻的第一侧上形成第一材料的第一侧壁 到栅极，选择性地蚀刻到缓冲层中以形成用于场效应晶体管的台面，在所述台面上沉积材料层，在所述台面上平坦化所述材料层以形成平坦化表面，使得所述栅极的顶部， 第一侧壁和台面上的材料层的顶部在相同的平坦化表面上，在平面化表面上沉积金属，退火以将栅极形成金属硅化栅极，并蚀刻以除去多余的非硅化金属。

公开(公告)号：US08039903B1

公开(公告)日：2011-10-18

申请号：US12553974

申请日：2009-09-03

申请人： Ivan Milosavljevic ,  Adele Schmitz ,  Michael Antcliffe ,  Ming Hu ,  Lorna Hodgson

发明人： Ivan Milosavljevic ,  Adele Schmitz ,  Michael Antcliffe ,  Ming Hu ,  Lorna Hodgson

IPC分类号： H01L29/96

CPC分类号： H01L29/42316 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/778 ,  H01L29/812

摘要： In various embodiments, a tiered gate structure transistor is provided including a source, a drain, and a gate between the source and the drain. The tiered gate structure transistor including a gate foot having a top portion and sidewalls. A gate head is attached to the top portion of the gate foot. A passivation layer extends along and directly contacts an uppermost surface of the source, and extends along and directly contacts an uppermost surface of the drain, the passivation layer surrounds the sidewalls of the gate foot such that the top portion is not covered by the passivation layer and such that the passivation layer surrounding the sidewalls supports the gate head.

摘要翻译： 在各种实施例中，提供了分层的栅极结构晶体管，其包括在源极和漏极之间的源极，漏极和栅极。 分层栅极结构晶体管包括具有顶部和侧壁的栅极脚。 门头连接到门脚的顶部。 钝化层沿着源极的最上表面延伸并且直接接触源极的最上表面，并且沿着漏极的最上表面延伸并且直接接触漏极的最上表面，钝化层围绕栅极脚的侧壁，使得顶部部分不被钝化层覆盖 并且使得围绕侧壁的钝化层支撑栅极头。

公开(公告)号：US07804114B1

公开(公告)日：2010-09-28

申请号：US12417922

申请日：2009-04-03

申请人： Ivan Milosavljevic ,  Adele Schmitz ,  Michael Antcliffe ,  Ming Hu

发明人： Ivan Milosavljevic ,  Adele Schmitz ,  Michael Antcliffe ,  Ming Hu

IPC分类号： H01L29/80

CPC分类号： H01L21/28593 ,  H01L29/66462 ,  H01L29/66863

摘要： In one embodiment, a tiered gate device is provided including a source, a drain, and a gate foot therebetween. A gate head is attached to the gate foot. A source extension extends from on an uppermost surface of the source toward the gate foot along the substrate. In some embodiments a drain extension extends from on and uppermost surface of the drain toward the gate foot along the substrate.

摘要翻译： 在一个实施例中，提供了一种分层门装置，其包括源极，漏极和位于它们之间的栅极脚。 门头连接到门脚。 源延伸部从源极的最上表面沿着衬底延伸到栅极脚。 在一些实施例中，排水延伸部沿着衬底从排水管的上表面和最上表面延伸到浇口脚。

公开(公告)号：US06318278B1

公开(公告)日：2001-11-20

申请号：US09599217

申请日：2000-06-22

申请人： Jacques Dugue ,  Thierry Borissoff ,  Ovidiu Marin ,  Ivan Milosavljevic ,  Dora Sophia Alves ,  Michel Viardot

发明人： Jacques Dugue ,  Thierry Borissoff ,  Ovidiu Marin ,  Ivan Milosavljevic ,  Dora Sophia Alves ,  Michel Viardot

IPC分类号： F23L900

CPC分类号： F27B7/2033

摘要： In this process the material is passed through a precalcination device equipped with at least one fuel injector at the outlet of which a fuel injection zone is formed, then the at least partially calcined material is passed into the rotary kiln which at its downstream end, is equipped with a primary combustion unit. At least one oxygen rich fluid with an oxygen concentration by volume higher than that of the products of combustion from the rotary kiln is injected near to the injection zone so that the oxygen rich fluid can supply from 1% to 40%, and preferably form 1 to 10% of the stoichiometric amount of oxygen needed for the combustion of the fuel injected by the injector.

摘要翻译： 在该过程中，材料通过配备有至少一个燃料喷射器的预煅烧装置，在其出口处形成燃料喷射区，然后至少部分煅烧的材料进入回转窑，在其下游端是 装备有一级燃烧单元。 将至少一种氧浓度高于来自回转窑燃烧产物的氧浓度的富氧流体注入到注入区附近，使得富氧流体可以供应1％至40％，优选形成1 至喷射器喷射的燃料燃烧所需的化学计量量的10％。

公开(公告)号：US07723761B1

公开(公告)日：2010-05-25

申请号：US12212627

申请日：2008-09-17

申请人： Ivan Milosavljevic ,  Adele Schmitz ,  Michael Delaney ,  Michael Antcliffe

发明人： Ivan Milosavljevic ,  Adele Schmitz ,  Michael Delaney ,  Michael Antcliffe

IPC分类号： H01L29/80

CPC分类号： H01L21/28587 ,  H01L21/28593

摘要： In one embodiment, a tiered gate structure is provided having a substrate including a source, a drain and a gate thereon. The gate includes an elongated gate foot having a first deposition gate material extending from the substrate, the elongated gate foot having a top portion distal from the substrate. The gate head has a second deposition gate material and includes an elongated portion extending downward from the gate head to connect to the top portion of the elongated gate foot.

摘要翻译： 在一个实施例中，提供了具有包括源极，漏极和栅极的衬底的分层栅极结构。 栅极包括细长的栅极脚，其具有从衬底延伸的第一沉积栅极材料，细长栅极脚具有远离衬底的顶部部分。 门头具有第二沉积栅极材料，并且包括从栅极头向下延伸以连接到细长栅极脚的顶部的细长部分。

公开(公告)号：US07608497B1

公开(公告)日：2009-10-27

申请号：US11517685

申请日：2006-09-08

申请人： Ivan Milosavljevic ,  Adele Schmitz ,  Michael Antcliffe ,  Ming Hu ,  Lorna Hodgson

发明人： Ivan Milosavljevic ,  Adele Schmitz ,  Michael Antcliffe ,  Ming Hu ,  Lorna Hodgson

IPC分类号： H01L21/338

CPC分类号： H01L29/42316 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/778 ,  H01L29/812

摘要： A method for fabricating a tiered structure includes forming a gate on a semiconductor substrate. Formation of the gate includes depositing a gate foot using a gate foot mask having an opening through it to define the gate foot over the substrate. After forming the gate foot, the gate foot mask is stripped and a passivation layer is formed over the gate foot and the substrate. A gate head mask is formed over the gate foot with the gate head mask exposing a portion of the passivation layer on a top portion of the gate foot. The portion of the passivation layer on the top portion of the gate foot is removed to expose the top portion of the gate foot. A gate head is formed on the top portion of the gate foot using the gate head mask. A lift-off process is performed, removing the gate head mask.

摘要翻译： 一种用于制造分层结构的方法包括在半导体衬底上形成栅极。 栅极的形成包括使用具有通过其的开口的栅极脚掩模沉积栅极脚以在基板上限定栅极脚。 在形成栅极脚之后，栅极脚掩模被剥离，并且在栅极脚和衬底上形成钝化层。 栅极掩模形成在栅极脚上方，栅极掩模将栅极脚的顶部上的钝化层的一部分暴露出来。 去除栅极脚的顶部上的钝化层的部分以露出栅极脚的顶部。 门头使用门头罩形成在门脚的顶部上。 进行剥离处理，去除栅极头罩。

公开(公告)号：US07534672B1

公开(公告)日：2009-05-19

申请号：US11517791

申请日：2006-09-08

申请人： Ivan Milosavljevic ,  Adele Schmitz ,  Michael Antcliffe ,  Ming Hu

发明人： Ivan Milosavljevic ,  Adele Schmitz ,  Michael Antcliffe ,  Ming Hu

IPC分类号： H01L21/338

CPC分类号： H01L21/28593 ,  H01L29/66462 ,  H01L29/66863

摘要： In one embodiment, a tiered gate device is provided including a source, a drain, and a gate foot therebetween. A gate head is attached to the gate foot. A source extension extends from on the source toward the gate foot along the substrate. In some embodiments a drain extension extends from on the drain toward the gate foot along the substrate.

摘要翻译： 在一个实施例中，提供了一种分层门装置，其包括源极，漏极和位于它们之间的栅极脚。 门头连接到门脚。 源极延伸从源极沿着衬底延伸到栅极脚。 在一些实施例中，漏极延伸部沿着衬底从漏极延伸到栅极脚。

公开(公告)号：US07439166B1

公开(公告)日：2008-10-21

申请号：US11150439

申请日：2005-06-11

申请人： Ivan Milosavljevic ,  Adele Schmitz ,  Michael Delaney ,  Michael Antcliffe

发明人： Ivan Milosavljevic ,  Adele Schmitz ,  Michael Delaney ,  Michael Antcliffe

IPC分类号： H01L21/28

CPC分类号： H01L21/28587 ,  H01L21/28593

摘要： In one implementation, a method for fabricating a tiered structure is provided, which includes forming a source and a drain on a substrate with a gate formed therebetween. Formation of the gate includes depositing a gate foot using a gate foot mask having an opening through it to define the gate foot over the substrate. After forming the gate foot, the gate foot mask is stripped. A gate head mask is formed over the gate foot with the gate head mask exposing a top portion of the gate foot. A gate head is formed on the top portion of the gate foot using the gate head mask. A lift-off process is performed, removing the gate head mask.

摘要翻译： 在一个实施方案中，提供了一种用于制造分层结构的方法，其包括在衬底上形成源极和漏极，其间形成有栅极。 栅极的形成包括使用具有通过其的开口的栅极脚掩模沉积栅极脚以在基板上限定栅极脚。 形成门脚后，门脚罩被剥去。 栅极掩模形成在栅极脚之上，栅极头部掩模露出栅极脚的顶部。 门头使用门头罩形成在门脚的顶部上。 进行剥离处理，去除栅极头罩。