Microwave-Induced Ion Cleaving and Patternless Transfer of Semiconductor Films
    1.
    发明申请
    Microwave-Induced Ion Cleaving and Patternless Transfer of Semiconductor Films 审中-公开
    微波诱导离子切割和无模式转移半导体薄膜

    公开(公告)号:US20100112780A1

    公开(公告)日:2010-05-06

    申请号:US11995295

    申请日:2006-07-11

    IPC分类号: H01L21/18

    CPC分类号: H01L21/76254

    摘要: A method of ion cleaving using microwave radiation is described. The method includes using microwave radiation to induce exfoliation of a semiconductor layer from a donor substrate. The donor substrate may be implanted, bonded to a carrier substrate, and heated via the microwave radiation. The implanted portion of the donor substrate may include increased damage and/or dipoles (relative to non-implanted portions of the donor substrate), which more readily absorb microwave radiation. Consequently, by using microwave radiation, an exfoliation time may be reduced to 12 seconds or less. In addition, a presented method also includes the use of focused ion beam implantation to achieve a pattern-less transfer of a semiconductor layer onto a carrier substrate.

    摘要翻译: 描述了使用微波辐射的离子切割的方法。 该方法包括使用微波辐射来从施主衬底诱导半导体层的剥离。 可以将施主衬底注入,结合到载体衬底上,并通过微波辐射加热。 供体衬底的植入部分可以包括更容易吸收微波辐射的增加的损伤和/或偶极(相对于供体衬底的非植入部分)。 因此,通过使用微波辐射,剥离时间可以减少到12秒以下。 此外,所提出的方法还包括使用聚焦离子束注入来实现半导体层到载体衬底上的无模式转移。

    Direct patterning of nanometer-scale silicide structures on silicon by ion-beam implantation through a thin barrier layer
    3.
    发明授权
    Direct patterning of nanometer-scale silicide structures on silicon by ion-beam implantation through a thin barrier layer 失效
    通过离子束注入通过薄的阻挡层直接图案化硅上的纳米级硅化物结构

    公开(公告)号:US06750124B1

    公开(公告)日:2004-06-15

    申请号:US10071756

    申请日:2002-02-06

    IPC分类号: H01L2144

    摘要: Direct focused ion beam (FIB) mixing is given as a method for patterning of metal silicide structures on a silicon surface. This technique allows the fabrication of submicron structures without the use of resist-based lithography methods. VLSI containing metal silicide connects, interconnects and structures may be prepared by the method. Fast semiconductor devices having good circuit speed and reduced RC time delay including the technologies MEMS, MOSFET, CMOS, pMOS, nMOS and BiCMOS result.

    摘要翻译: 给出直接聚焦离子束(FIB)混合作为在硅表面上图形化金属硅化物结构的方法。 该技术允许制造亚微米结构而不使用基于抗蚀剂的光刻方法。 可以通过该方法制备包含金属硅化物连接的VLSI,互连和结构。 导致具有良好的电路速度和减小的RC时间延迟的快速半导体器件包括MEMS,MOSFET,CMOS,pMOS,nMOS和BiCMOS等技术。

    Display bender and method of testing flexible display
    4.
    发明授权
    Display bender and method of testing flexible display 有权
    显示弯曲机和测试方法灵活显示

    公开(公告)号:US08943898B2

    公开(公告)日:2015-02-03

    申请号:US13305344

    申请日:2011-11-28

    IPC分类号: G01N3/02 G02F1/1333 G02F1/13

    CPC分类号: G02F1/133305 G02F1/1309

    摘要: Some embodiments include an apparatus for testing flexible displays. The apparatus can include: (a) a first clamp configured to receive a first end of the flexible display; (b) a second clamp configured to receive a second end of the flexible display, wherein the second end of the flexible display is opposite the first end of the flexible display; and (c) a test column. Other embodiments and methods are disclosed herein.

    摘要翻译: 一些实施例包括用于测试柔性显示器的装置。 所述设备可以包括:(a)第一夹具,其构造成接收柔性显示器的第一端; (b)第二夹具,构造成接收柔性显示器的第二端,其中柔性显示器的第二端与柔性显示器的第一端相对; 和(c)试验柱。 本文公开了其它实施例和方法。

    Systems and Methods for Susceptor Assisted Microwave Annealing
    5.
    发明申请
    Systems and Methods for Susceptor Assisted Microwave Annealing 审中-公开
    受体辅助微波退火的系统和方法

    公开(公告)号:US20120196453A1

    公开(公告)日:2012-08-02

    申请号:US13363909

    申请日:2012-02-01

    申请人: Terry L. Alford

    发明人: Terry L. Alford

    IPC分类号: H01L21/263 H05B6/64

    摘要: Systems and methods for microwave annealing are disclosed. In some embodiments, the system may comprise a microwave emitter configured to emit a microwave at a single frequency during an anneal time. In some embodiments, the system may further comprise an anneal unit to be annealed, the anneal unit having a top side, a bottom side, and one or more edge sides. In some embodiments, the system may further comprise a susceptor configured to absorb microwave energy, where the susceptor is adjacent to the edge side and at the bottom side of the anneal unit.

    摘要翻译: 公开了微波退火的系统和方法。 在一些实施例中,系统可以包括配置成在退火时间期间以单个频率发射微波的微波发射器。 在一些实施例中,系统还可以包括待退火的退火单元,退火单元具有顶侧,底侧和一个或多个边缘侧。 在一些实施例中,系统还可以包括被配置为吸收微波能量的基座,其中基座邻近退火单元的边缘侧和底侧。

    Cladded silver and silver alloy metallization for improved adhesion electromigration resistance
    7.
    发明授权
    Cladded silver and silver alloy metallization for improved adhesion electromigration resistance 有权
    银和银合金金属镀层,提高了附着力和电迁移率

    公开(公告)号:US07888263B2

    公开(公告)日:2011-02-15

    申请号:US12237905

    申请日:2008-09-25

    IPC分类号: H01L21/00

    摘要: In semiconductor integrated circuit and device fabrication interconnect metallization is accomplished by a clad Ag deposited on a SiO2 level on a Si surface. The clad Ag has a layer of an alloy of Ag and Al (5 atomic %) contacting the SiO2, a layer of substantially pure Ag and an outer layer of the Ag and Al alloy. The alloy improves adhesion to the SiO2, avoids agglomeration of the Ag, reduces or eliminates diffusion at the SiO2 surface, reduces electromigration and presents a passive exterior surface.

    摘要翻译: 在半导体集成电路和器件制造互连中,通过沉积在Si表面上的SiO2层上的包层Ag来实现金属化。 包层Ag具有与SiO 2接触的Ag和Al(5原子%)的合金层,基本上纯的Ag的层和Ag和Al合金的外层。 该合金提高了与SiO2的粘附性,避免了Ag的聚集,减少或消除了SiO 2表面的扩散,减少了电迁移并呈现了被动的外表面。

    CLADDED SILVER AND SILVER ALLOY METALLIZATION FOR IMPROVED ADHESION ELECTROMIGRATION RESISTANCE
    8.
    发明申请
    CLADDED SILVER AND SILVER ALLOY METALLIZATION FOR IMPROVED ADHESION ELECTROMIGRATION RESISTANCE 有权
    用于改进粘合和电阻率的分级银和银合金金属化

    公开(公告)号:US20090085212A1

    公开(公告)日:2009-04-02

    申请号:US12237905

    申请日:2008-09-25

    IPC分类号: H01L21/768 H01L23/532

    摘要: In semiconductor integrated circuit and device fabrication interconnect metallization is accomplished by a clad Ag deposited on a SiO2 level on a Si surface. The clad Ag has a layer of an alloy of Ag and Al (5 atomic %) contacting the SiO2, a layer of substantially pure Ag and an outer layer of the Ag and Al alloy. The alloy improves adhesion to the SiO2, avoids agglomeration of the Ag, reduces or eliminates diffusion at the SiO2 surface, reduces electromigration and presents a passive exterior surface.

    摘要翻译: 在半导体集成电路和器件制造互连中,通过沉积在Si表面上的SiO2层上的包层Ag来实现金属化。 包层Ag具有与SiO 2接触的Ag和Al(5原子%)的合金层,基本上纯的Ag的层和Ag和Al合金的外层。 该合金提高了与SiO2的粘附性,避免了Ag的聚集,减少或消除了SiO 2表面的扩散,减少了电迁移并呈现了被动的外表面。

    DISPLAY BENDER AND METHOD OF TESTING FLEXIBLE DISPLAY
    10.
    发明申请
    DISPLAY BENDER AND METHOD OF TESTING FLEXIBLE DISPLAY 有权
    显示弯曲器和测试柔性显示的方法

    公开(公告)号:US20120067134A1

    公开(公告)日:2012-03-22

    申请号:US13305344

    申请日:2011-11-28

    IPC分类号: G01L1/24 G01N3/20

    CPC分类号: G02F1/133305 G02F1/1309

    摘要: Some embodiments include an apparatus for testing flexible displays. The apparatus can include: (a) a first clamp configured to receive a first end of the flexible display; (b) a second clamp configured to receive a second end of the flexible display, wherein the second end of the flexible display is opposite the first end of the flexible display; and (c) a test column. Other embodiments and methods are disclosed herein.

    摘要翻译: 一些实施例包括用于测试柔性显示器的装置。 所述设备可以包括:(a)第一夹具,其构造成接收柔性显示器的第一端; (b)第二夹具,构造成接收柔性显示器的第二端,其中柔性显示器的第二端与柔性显示器的第一端相对; 和(c)试验柱。 本文公开了其它实施例和方法。