公开(公告)号：US11152219B2

公开(公告)日：2021-10-19

申请号：US16443492

申请日：2019-06-17

Applicant: ENTEGRIS, INC.

Inventor： Chieh Ju Wang ,  Hsing-Chen Wu ,  Chia-Jung Hsu

IPC: H01L21/3213 ,  H01L21/311 ,  H01L21/306 ,  C09K13/08 ,  C09K13/06

Abstract: A method of selectively removing aluminium oxide or nitride material from a microelectronic substrate, the method comprising contacting the material with an aqueous etching composition comprising: an etchant comprising a source of fluoride; and a metal corrosion inhibitor; wherein the composition has a pH in the range of from 3 to 8. Aqueous etching compositions and uses are also described.

公开(公告)号：US10790187B2

公开(公告)日：2020-09-29

申请号：US15873531

申请日：2018-01-17

Applicant: Entegris, Inc.

Inventor： Emanuel I. Cooper ,  Makonnen Payne ,  WonLae Kim ,  Eric Hong ,  Sheng-Hung Tu ,  Chieh Ju Wang ,  Chia-Jung Hsu

IPC: C11D7/50 ,  H01L21/768 ,  B08B7/00 ,  H01L21/02 ,  C11D3/395 ,  C23G1/20 ,  C11D7/32 ,  C11D7/36 ,  C11D3/00 ,  C11D3/39 ,  C09K13/00 ,  G03F7/42 ,  C11D7/26 ,  C11D7/08 ,  C23G1/18 ,  C11D11/00 ,  C23G1/26 ,  H01L21/311

Abstract: The disclosure relates to a cleaning composition that aids in the removal of post-etch residues and aluminum-containing material, e.g., aluminum oxide, in the production of semiconductors that utilize an aluminum-containing etch stop layer. The compositions have a high selectivity for post-etch residue and aluminum-containing materials relative to low-k dielectric materials, cobalt-containing materials and other metals on the microelectronic device.

公开(公告)号：US10472567B2

公开(公告)日：2019-11-12

申请号：US14772652

申请日：2014-03-04

Applicant: Entegris, Inc.

Inventor： Li-Min Chen ,  Emanuel I. Cooper ,  Steven Lippy ,  Lingyan Song ,  Chia-Jung Hsu ,  Sheng-Hung Tu ,  Chieh Ju Wang

IPC: C09K13/00 ,  H01L21/3213 ,  C23F1/14 ,  C23F1/26 ,  C23G1/02 ,  C09K13/08 ,  C09K13/10 ,  G03F7/42

Abstract: Semi-aqueous compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to metal conducting, e.g., tungsten and copper, and insulating materials from a microelectronic device having same thereon. The semi-aqueous compositions contain at least one oxidant, at least one etchant, and at least one organic solvent, may contain various corrosion inhibitors to ensure selectivity.

公开(公告)号：US10428271B2

公开(公告)日：2019-10-01

申请号：US14914418

申请日：2014-08-28

Applicant: Entegris, Inc.

Inventor： Emanuel I. Cooper ,  Li-Min Chen ,  Steven Lippy ,  Chia-Jung Hsu ,  Sheng-hung Tu ,  Chieh Ju Wang

IPC: C09K13/00 ,  C09K13/06 ,  H01L21/311 ,  H01L21/3213

Abstract: Compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to insulating materials from a microelectronic device having same thereon. The removal compositions contain at least one oxidant, one etchant, and one activator to enhance the etch rate of titanium nitride.

公开(公告)号：US20180204764A1

公开(公告)日：2018-07-19

申请号：US15873531

申请日：2018-01-17

Applicant: Entegris, Inc.

Inventor： Emanuel I. Cooper ,  Makonnen Payne ,  WonLae Kim ,  Eric Hong ,  Sheng-Hung Tu ,  Chieh Ju Wang ,  Chia-Jung Hsu

IPC: H01L21/768 ,  H01L21/02 ,  B08B7/00

Abstract: The disclosure relates to a cleaning composition that aids in the removal of post-etch residues and aluminum-containing material, e.g., aluminum oxide, in the production of semiconductors that utilize an aluminum-containing etch stop layer. The compositions have a high selectivity for post-etch residue and aluminum-containing materials relative to low-k dielectric materials, cobalt-containing materials and other metals on the microelectronic device.