公开(公告)号：US10988718B2

公开(公告)日：2021-04-27

申请号：US16308053

申请日：2017-03-09

申请人： ENTEGRIS, INC. ,  Thomas Parson ,  Shrane-Ning Jenq ,  Steven Medd ,  Daniela White ,  Michael White ,  Donald Frye

发明人： Thomas Parson ,  Shrane-Ning Jenq ,  Steven Medd ,  Daniela White ,  Michael White ,  Donald Frye

IPC分类号： C11D7/32 ,  C11D11/00 ,  C11D3/20 ,  C11D3/37 ,  H01L21/02 ,  C11D1/08 ,  C11D1/00 ,  C23F1/26 ,  C23F1/28 ,  B08B3/08 ,  C11D3/04 ,  C11D3/30 ,  C11D3/32 ,  C11D3/33

摘要： A removal composition and process for cleaning post-chemical mechanical polishing (CMP) contaminants and particles from a microelectronic device having said particles and contaminants thereon. The removal compositions include at least one at least one organic additive; at least one metal chelating agent; and at least one polyelectrolyte. The composition achieves highly efficacious removal of the particles and CMP contaminant material from the surface of the microelectronic device without compromising the low-k dielectric, silicon nitride, and metal containing layers such as tungsten-containing layers.

公开(公告)号：US20180251712A1

公开(公告)日：2018-09-06

申请号：US15971535

申请日：2018-05-04

申请人： Entegris, Inc.

发明人： Laisheng Sun ,  Peng Zhang ,  Jun Liu ,  Steven Medd ,  Jeffrey A. Bames ,  Shrane Ning Jenq

IPC分类号： C11D11/00 ,  H01L21/02 ,  C11D3/30 ,  C11D1/62 ,  C23G1/20 ,  C11D7/32 ,  C11D3/00

CPC分类号： C11D11/0047 ,  C11D1/62 ,  C11D3/0073 ,  C11D3/30 ,  C11D7/32 ,  C11D7/3209 ,  C23G1/20 ,  H01L21/02063 ,  H01L21/02065 ,  H01L21/02074

摘要： A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions are substantially devoid of alkali hydroxides, alkaline earth metal hydroxides, and tetramethylammonium hydroxide. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.

公开(公告)号：US10557107B2

公开(公告)日：2020-02-11

申请号：US15971535

申请日：2018-05-04

申请人： Entegris, Inc.

发明人： Laisheng Sun ,  Peng Zhang ,  Jun Liu ,  Steven Medd ,  Jeffrey A. Barnes ,  Shrane Ning Jenq

IPC分类号： C11D7/32 ,  C11D11/00 ,  C11D1/62 ,  C23G1/20 ,  H01L21/02 ,  C11D3/00 ,  C11D3/30

摘要： A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions are substantially devoid of alkali hydroxides, alkaline earth metal hydroxides, and tetramethylammonium hydroxide. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.

公开(公告)号：US20150045277A1

公开(公告)日：2015-02-12

申请号：US14385946

申请日：2013-03-14

申请人： Entegris, Inc.

发明人： Jun Liu ,  Trace Quentin Hurd ,  Laisheng Sun ,  Steven Medd ,  Shrane Ning Jenq

IPC分类号： C11D7/32 ,  C11D11/00 ,  C11D7/26

CPC分类号： C11D7/3209 ,  C11D3/0042 ,  C11D3/0073 ,  C11D7/265 ,  C11D7/268 ,  C11D7/3218 ,  C11D7/3245 ,  C11D7/3281 ,  C11D7/34 ,  C11D11/0047 ,  H01L21/02074 ,  H01L21/7684 ,  H01L21/76843 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions include at least one quaternary base, at least one amine, at least one azole corrosion inhibitor, at least one reducing agent, and at least one solvent. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device while being compatible with barrier layers, wherein the barrier layers are substantially devoid of tantalum or titanium.

摘要翻译： 一种清洁组合物和用于从具有所述残余物和污染物的微电子装置清洁后化学机械抛光（CMP）残留物和污染物的清洁组合物和方法。 清洁组合物包括至少一种季碱，至少一种胺，至少一种唑类腐蚀抑制剂，至少一种还原剂和至少一种溶剂。 该组合物可与微电子器件的表面高效地清洁后CMP残留物和污染物质，同时与阻挡层相容，其中阻挡层基本上不含钽或钛。